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Vishay General Semiconductor - Diodes Division MBRB760HE3_B/P
- Part No.:
- MBRB760HE3_B/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MBRB760HE3_B/P.pdf
- Description:
- DIODE SCHOTTKY 60V 7.5A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,188
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Product details
Overview
MBRB760HE3_B/P from Vishay General Semiconductor is a 60 V, 7.5 A average forward current Schottky barrier rectifier in TO-220AC package, featuring 0.65 V forward voltage at 7.5 A and 125 °C junction temperature, guardring overvoltage protection, and high-frequency operation for DC/DC converters and switching power supplies.
For engineers reviewing the MBRB760HE3_B/P datasheet, MBRB760HE3_B/P pinout, MBRB760HE3_B/P application, or MBRB760HE3_B/P equivalent, key selection criteria include reverse voltage rating (60 V), thermal resistance (3.0 °C/W), surge capability (150 A IFSM), low VF at elevated temperature, and TO-220AC mechanical compatibility with heatsink mounting.
Technical Context
This device implements a single-die Schottky barrier structure optimized for low conduction loss and fast recovery-no minority-carrier storage, enabling high-frequency rectification up to several MHz. Its guardring design enhances ruggedness against transient overvoltage events without requiring external snubbers.
The TO-220AC package provides direct metal-to-heatsink thermal path with RθJC = 3.0 °C/W, supporting continuous 7.5 A operation at TC ≤ 95 °C. Polarity is marked on case; pin 1 is anode, pin 2 is cathode, and the tab is electrically connected to the cathode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - maximum repetitive peak reverse voltage; defines safe blocking range in DC/DC converter high-side freewheeling paths |
| IF(AV) | 7.5 A - average forward current at TC = 25 °C; derates linearly above 25 °C per Fig. 1 |
| VF @ 7.5 A, 125 °C | 0.65 V - forward drop under worst-case thermal condition; determines conduction loss in high-temp environments |
| IFSM | 150 A - non-repetitive surge rating (8.3 ms half-sine); supports inrush and fault-current handling in SMPS inputs |
| RθJC | 3.0 °C/W - thermal resistance junction-to-case; enables heatsink sizing for 7.5 A continuous operation |
| IR @ 60 V, 125 °C | 50 µA - reverse leakage at max rated voltage and max junction temperature; impacts standby power in polarity protection |
| TJ max. | 150 °C - absolute maximum junction temperature; sets upper limit for thermal design margin |
Pinout & Package
Package: TO-220AC - single-ended, through-hole, isolated tab (cathode-connected), matte tin-plated leads, UL 94 V-0 molding compound, rated for 275 °C solder bath (10 s).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward conduction; connects to source/switch node in buck/flyback secondary |
| Pin 2 | Cathode | Output terminal; electrically tied to metal tab for low-inductance heatsinking and return path |
| Tab | Cathode | Integral thermal and electrical connection point; must be electrically isolated from chassis unless circuit requires common-cathode reference |
Key Features
| Feature | Design Value |
|---|---|
| Guardring overvoltage protection | Enhances avalanche ruggedness without external clamping; improves reliability in unregulated input transients |
| Low VF at high temperature | 0.65 V @ 7.5 A / 125 °C reduces conduction loss drift in thermally constrained enclosures |
| High surge capability | 150 A IFSM withstands repeated start-up surges and short-circuit events in industrial DC/DC modules |
| TO-220AC mechanical standardization | Enables drop-in replacement in legacy designs using MBR7xx family; compatible with standard heatsink clips and mounting hardware |
Applications
| Switching Power Supply Output Rectification | DC/DC Converter Freewheeling Diode |
|---|---|
Use Scenario: Secondary-side rectification in 12 V/24 V output buck converters operating at 100–500 kHz. IC Role / Device Role / Timing Role: Unidirectional current path delivering regulated DC output; conducts during low-side switch off-time. Use Value: 0.65 V VF at 125 °C minimizes conduction loss and improves efficiency by ~0.8 % vs. higher-VF alternatives at full load and elevated ambient. | Use Scenario: Freewheeling path in synchronous buck regulators where body diode conduction is avoided. IC Role / Device Role / Timing Role: Provides low-loss current recirculation path when high-side MOSFET is off and inductor current decays. Use Value: Fast recovery (<10 ns) and zero QRR eliminate reverse recovery losses, reducing EMI and improving light-load efficiency. |
| Polarity Protection Circuit | Automotive Body Control Module Input Stage |
Use Scenario: Reverse-voltage blocking at main power input of embedded controllers powered from 12 V battery rails. IC Role / Device Role / Timing Role: Series-connected anode-in configuration preventing damage from accidental battery reversal. Use Value: 60 V VRRM exceeds automotive load-dump transients (ISO 7637-2 Pulse 5a: +120 V), while 50 µA IR at 125 °C limits standby current drain. | Use Scenario: Input rectification and surge suppression in BCM sub-modules exposed to harsh 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Primary front-end diode handling cold-crank (down to 6 V), jump-start (up to 16 V), and load-dump events. Use Value: Guardring design sustains 150 A surge without degradation; TO-220AC tab allows direct bolt-down to metal chassis for robust thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS745B-TR | 45 V VRRM, same IF(AV) and TO-220AC package; VF = 0.57 V @ 7.5 A / 25 °C but rises to 0.68 V @ 125 °C | Limited to ≤45 V systems; unsuitable for 60 V-rated bus monitoring or load-dump tolerant designs | Select when system VR does not exceed 45 V and lower room-temp VF is prioritized over surge margin |
| ON Semi MBR760G | Identical VRRM (60 V), IF(AV) (7.5 A), and TO-220AC; VF = 0.67 V @ 7.5 A / 125 °C; RθJC = 3.2 °C/W | Nearly identical performance envelope; slightly higher thermal resistance may require larger heatsink at full load | Valid alternative where Vishay supply continuity is constrained; verify layout clearance for tab isolation per OEM spec |
Compared with STPS745B-TR and MBR760G, the MBRB760HE3_B/P delivers the lowest VF at 125 °C (0.65 V) and tightest thermal resistance (3.0 °C/W), making it optimal for thermally dense 60 V DC/DC modules requiring sustained 7.5 A conduction.
Availability
MBRB760HE3_B/P is available at Aetrix Electronics and suitable for switching power supplies, DC/DC converters, polarity protection circuits, and automotive body control modules requiring stable component supply and long-term industrial availability.
Supply support for MBRB760HE3_B/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The MBRB760HE3_B/P belongs to Vishay's MBR7xx series of high-current Schottky rectifiers designed specifically for high-efficiency, high-frequency power conversion in industrial and automotive environments where thermal performance and surge resilience are critical.
FAQ
What is the maximum junction temperature rating for the MBRB760HE3_B/P?
The MBRB760HE3_B/P has a maximum junction temperature (TJ max.) of +150 °C, as specified in the Vishay datasheet Document Number 88680. This rating defines the upper thermal limit for reliable operation; sustained operation above this temperature risks parametric shift and premature failure. Derating curves in Figure 1 show that the device supports 7.5 A average forward current only when case temperature remains ≤95 °C. Thermal design must ensure RθJA remains within safe limits under worst-case ambient and power dissipation conditions for the MBRB760HE3_B/P.
Is the MBRB760HE3_B/P RoHS-compliant and lead-free?
Yes, the MBRB760HE3_B/P is RoHS-compliant and lead-free. The "E3" suffix in the part number indicates compliance with the RoHS directive (2011/65/EU), and the device uses matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. It also meets JESD 201 Class 1A whisker test requirements. Material categorization details are defined in Vishay document 99912, accessible at www.vishay.com/doc?99912. All manufacturing and plating processes for the MBRB760HE3_B/P adhere to commercial-grade environmental standards.
What is the pin configuration and polarity marking for the MBRB760HE3_B/P?
The MBRB760HE3_B/P uses a TO-220AC package with three physical terminals: pin 1 (anode), pin 2 (cathode), and the metal tab (cathode-connected). Polarity is marked on the case body with a band or symbol adjacent to pin 1. Pin 1 is the anode; pin 2 and the tab are both cathode and electrically common. Mounting torque must not exceed 10 in-lbs to avoid package damage. This configuration is standardized across the MBR7xx family and confirmed in the mechanical drawings on page 4 of datasheet 88680 for the MBRB760HE3_B/P.
How does the guardring feature improve reliability of the MBRB760HE3_B/P?
The guardring in the MBRB760HE3_B/P is a diffusion-based structural enhancement surrounding the active Schottky junction, which controls electric field distribution during overvoltage transients. It prevents localized avalanche breakdown and enables controlled, non-destructive edge conduction during surge events such as ISO 7637-2 load-dump pulses. Unlike unguarded Schottky diodes, the MBRB760HE3_B/P maintains parameter stability after repeated 150 A IFSM surges, extending service life in automotive and industrial power inputs where transient immunity is critical.
Can the MBRB760HE3_B/P replace MBR760 in existing designs?
Yes, the MBRB760HE3_B/P is a direct replacement for the MBR760 in most applications. Both share identical electrical specifications (VRRM = 60 V, IF(AV) = 7.5 A, VF = 0.65 V @ 7.5 A / 125 °C), TO-220AC package, pinout, and thermal characteristics (RθJC = 3.0 °C/W). The "B" in MBRB760HE3_B/P denotes a specific internal die revision and "_B/P" indicates packaging variant, but functional and mechanical compatibility is maintained. Designers may retain existing PCB footprints, heatsinks, and bill-of-materials when migrating to the MBRB760HE3_B/P.
MBRB760HE3_B/P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 7.5A
- Voltage - Forward (Vf) (Max) @ If:
- 750 mV @ 7.5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 60 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB
- Operating Temperature - Junction:
- -65°C ~ 150°C
MBRB760HE3_B/P FAQ
1.How can I place an order for MBRB760HE3_B/P through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRB760HE3_B/P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRB760HE3_B/P reliable?
The price and inventory of MBRB760HE3_B/P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB760HE3_B/P is usually 5 days.
3.What payment methods are accepted for MBRB760HE3_B/P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB760HE3_B/P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRB760HE3_B/P?
MBRB760HE3_B/P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRB760HE3_B/P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRB760HE3_B/P?
For technical support, including MBRB760HE3_B/P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB760HE3_B/P requirements.
6.How does Aetrix verify that MBRB760HE3_B/P is sourced from the original manufacturer or authorized distributors?
All MBRB760HE3_B/P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB760HE3_B/P meets industry standards.
7.What is the process for return or replacement of MBRB760HE3_B/P?
All MBRB760HE3_B/P units undergo pre-shipment inspection (PSI). If there is an issue with MBRB760HE3_B/P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRB760HE3_B/P part is unused and in its original packaging.
Return procedure for MBRB760HE3_B/P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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