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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MBT2222ADW1T

Name: MBT2222ADW1T
Brand: onsemi
SKU: MBT2222ADW1T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MBT2222ADW1T

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: MBT2222ADW1T.pdf

Description:: SMALL SIGNAL BIPOLAR TRANSISTOR

Quantity:: RFQ Add To RFQ list

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Inventory:18,000

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Product details

Overview

MBT2222ADW1T from onsemi is a dual NPN general-purpose silicon transistor in SOT-363 (SC-70-6) package, rated for 40 V_CEO, 600 mA continuous collector current, and 150 mW power dissipation at 25°C ambient. It delivers DC current gain (h_FE) of 75–300 across 10–500 mA, with f_T = 300 MHz and V_CE(sat) ≤ 0.3 V at I_C/I_B = 10, suitable for low-voltage switching and amplification in portable power management circuits.

For engineers reviewing the MBT2222ADW1T datasheet, pinout, applications, or equivalent options, key selection criteria include dual-NPN configuration, SOT-363 footprint compatibility, guaranteed HBM Class 2 ESD rating, and validated performance at −55°C to +150°C junction temperature.

Technical Context

This dual-transistor device integrates two independent NPN BJTs sharing a common thermal die in a single 6-pin SOT-363 package. Each transistor supports V_CEO = 40 V, V_CBO = 75 V, and V_EBO = 6.0 V, with matched small-signal parameters including h_fe = 50–375 at 1–10 mA and C_obo ≤ 8.0 pF at 10 V.

Switching performance is characterized by t_d ≤ 10 ns, t_r ≤ 25 ns, t_s ≤ 225 ns, and t_f ≤ 60 ns under 30 V supply and I_C/I_B = 10 conditions. Thermal resistance R_JA = 833°C/W reflects FR4 board mounting per minimum footprint per Note 1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
I_C (continuous)	600 mA - Continuous DC collector current limit per transistor; defines max load drive capability.
P_D @ T_A = 25°C	150 mW - Total package power dissipation limit on standard FR4 PCB; constrains thermal design margin.
f_T	300 MHz - Current-gain bandwidth product at I_C = 20 mA, V_CE = 20 V; indicates usable RF/switching frequency range.
h_FE @ I_C = 10 mA	75–300 - DC current gain range at 10 mA collector current; determines base drive sizing for saturation.
V_CE(sat) @ I_C/I_B = 10	≤ 0.3 V - Collector-emitter saturation voltage at 150 mA collector current; sets conduction loss in switch mode.
ESD Rating	HBM Class 2 / MM Class B - Human-body and machine-model electrostatic discharge robustness level per JEDEC standards.

Pinout & Package

SOT-363 (SC-70-6) package with 1.25 mm × 2.10 mm footprint, 0.65 mm pin pitch, and exposed thermal pad not present. Moisture sensitivity level (MSL) = 1; Pb-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter 2	Emitter terminal of second NPN transistor; connects to local ground or emitter resistor for bias control.
2	Base 2	Base terminal of second NPN transistor; requires current-limited drive for switching or linear operation.
3	Collector 1	Collector terminal of first NPN transistor; connects to load or pull-up for active-low output stage.
4	Emitter 1	Emitter terminal of first NPN transistor; provides independent emitter reference for differential pair use.
5	Base 1	Base terminal of first NPN transistor; enables independent control of dual transistors in logic or driver ICs.
6	Collector 2	Collector terminal of second NPN transistor; supports redundant or mirrored switching paths in compact layouts.

Key Features

Feature	Design Value
Dual NPN topology	Two electrically isolated transistors in one SOT-363 package-reduces board area vs. discrete SOT-23 solutions.
High f_T = 300 MHz	Enables stable amplification or fast switching up to ~100 MHz with proper layout and biasing.
Low V_CE(sat) ≤ 0.3 V	Minimizes conduction loss in battery-powered load switches operating below 5 V supply rails.
Wide T_J range: −55°C to +150°C	Supports automotive under-hood and industrial control applications without derating at high ambient.
Pb-free & MSL-1 packaging	Eliminates lead content and allows unlimited floor life-simplifies manufacturing and RoHS compliance.

Applications

LED Driver Circuit	Level-Shifting Interface
Use Scenario: Driving dual-color indicator LEDs from 3.3 V microcontroller GPIO pins with current limiting. IC Role / Device Role / Timing Role: Dual NPN switch providing independent anode control for red/green LED pairs in status panels. Use Value: Low V_CE(sat) ensures >95% efficiency at 20 mA LED current; SOT-363 saves 40% board space vs. two SOT-23 devices.	Use Scenario: Translating 1.8 V logic signals to 5 V TTL levels in mixed-voltage sensor interface boards. IC Role / Device Role / Timing Role: Active pull-up NPN stage converting open-drain outputs to full-rail CMOS-compatible signals. Use Value: f_T = 300 MHz supports clean edge transitions up to 20 MHz; matched h_FE minimizes skew between channels.
DC Motor Control	Current Mirror Reference
Use Scenario: Bidirectional H-bridge half-bridge drivers for 12 V, 300 mA brushed DC motors in portable tools. IC Role / Device Role / Timing Role: Complementary NPN pair controlling motor direction via PWM-driven base inputs. Use Value: 600 mA I_C rating handles peak stall currents; thermal resistance allows 150 mW dissipation without heatsink.	Use Scenario: Precision 1:1 current mirroring in analog front-end bias networks for op-amp input stages. IC Role / Device Role / Timing Role: Matched dual NPN transistors providing thermally coupled reference and output branches. Use Value: Shared die ensures <±2% h_FE tracking over temperature; C_ibo ≤ 25 pF maintains stability at 100 kHz.

LED Driver Circuit

Level-Shifting Interface

Use Scenario: Driving dual-color indicator LEDs from 3.3 V microcontroller GPIO pins with current limiting.

IC Role / Device Role / Timing Role: Dual NPN switch providing independent anode control for red/green LED pairs in status panels.

Use Value: Low V_CE(sat) ensures >95% efficiency at 20 mA LED current; SOT-363 saves 40% board space vs. two SOT-23 devices.

Use Scenario: Translating 1.8 V logic signals to 5 V TTL levels in mixed-voltage sensor interface boards.

IC Role / Device Role / Timing Role: Active pull-up NPN stage converting open-drain outputs to full-rail CMOS-compatible signals.

Use Value: f_T = 300 MHz supports clean edge transitions up to 20 MHz; matched h_FE minimizes skew between channels.

DC Motor Control

Current Mirror Reference

Use Scenario: Bidirectional H-bridge half-bridge drivers for 12 V, 300 mA brushed DC motors in portable tools.

IC Role / Device Role / Timing Role: Complementary NPN pair controlling motor direction via PWM-driven base inputs.

Use Value: 600 mA I_C rating handles peak stall currents; thermal resistance allows 150 mW dissipation without heatsink.

Use Scenario: Precision 1:1 current mirroring in analog front-end bias networks for op-amp input stages.

IC Role / Device Role / Timing Role: Matched dual NPN transistors providing thermally coupled reference and output branches.

Use Value: Shared die ensures <±2% h_FE tracking over temperature; C_ibo ≤ 25 pF maintains stability at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSV2222ADW1T	Same pinout and electrical specs; optimized for automotive AEC-Q101 qualification with extended reliability testing.	Required for automotive body electronics where PPAP documentation and failure-in-time (FIT) data are mandated.	Select NSV2222ADW1T when AEC-Q101 compliance and automotive-grade traceability are required.
MMBT2222A-7-F	Single NPN in SOT-23; identical per-transistor specs but no dual integration; R_JA = 383°C/W (higher thermal performance).	Preferred for high-power single-switch applications where thermal dissipation dominates over board area.	Choose MMBT2222A-7-F when only one transistor is needed and thermal headroom exceeds 150 mW.

Compared with MBT2222ADW1T, NSV2222ADW1T adds automotive qualification without altering pinout or baseline specs, while MMBT2222A-7-F trades dual integration for superior thermal resistance-making MBT2222ADW1T optimal for space-constrained dual-switch designs.

Availability

MBT2222ADW1T is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, DC motor control, and current mirror references requiring stable component supply across industrial automation, consumer electronics, and portable instrumentation programs.

Supply support for MBT2222ADW1T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, signal processing, and sensing technologies for automotive, industrial, and cloud infrastructure markets.

The MBT2222ADW1T belongs to onsemi's general-purpose bipolar transistor family designed for cost-sensitive, high-reliability switching and amplification in compact surface-mount applications.

FAQ

What is the maximum operating junction temperature for MBT2222ADW1T?

The MBT2222ADW1T has a specified junction and storage temperature range of −55°C to +150°C. This allows reliable operation in under-hood automotive environments and industrial enclosures without forced cooling, provided power dissipation remains within the 150 mW limit at 25°C ambient and thermal design accounts for R_JA = 833°C/W.

Does MBT2222ADW1T support direct replacement for legacy 2N2222-based designs?

The MBT2222ADW1T is not a direct drop-in for through-hole 2N2222 due to its dual-NPN SOT-363 configuration and different pinout. However, each individual transistor matches 2N2222's V_CEO, I_C, and h_FE specs-so redesign using MBT2222ADW1T requires PCB layout revision but preserves functional equivalence in dual-channel applications.

What is the typical noise figure of MBT2222ADW1T and where is it applicable?

The MBT2222ADW1T has a noise figure of ≤4.0 dB at I_C = 100 µA, V_CE = 10 V, R_S = 1.0 kΩ, and f = 1.0 kHz. This makes it suitable for low-noise preamplifier stages in audio signal chains and sensor interface circuits where sub-10 dB NF is acceptable, though not optimized for RF front-ends.

How does the SOT-363 package affect thermal performance compared to SOT-23?

The MBT2222ADW1T's SOT-363 package has higher thermal resistance (R_JA = 833°C/W) than single-transistor SOT-23 equivalents (~383°C/W), due to shared die area and smaller copper land pattern. Designers must limit total power dissipation to ≤150 mW at 25°C ambient and consider derating above 25°C using the −1.5 mV/°C V_BE coefficient.

Is MBT2222ADW1T suitable for PWM motor control applications?

Yes, MBT2222ADW1T supports PWM motor control with verified switching times: t_d ≤ 10 ns, t_r ≤ 25 ns, t_s ≤ 225 ns, and t_f ≤ 60 ns at I_C = 150 mA. Its 300 MHz f_T and low V_CE(sat) enable efficient operation up to 50 kHz PWM frequencies in 12 V, <300 mA brushed DC motor drivers.

MBT2222ADW1T Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

MBT2222ADW1T FAQ

1.How can I place an order for MBT2222ADW1T through Aetrix?

Please submit a Request for Quotation (RFQ) for MBT2222ADW1T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MBT2222ADW1T reliable?

The price and inventory of MBT2222ADW1T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBT2222ADW1T is usually 5 days.

3.What payment methods are accepted for MBT2222ADW1T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBT2222ADW1T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MBT2222ADW1T?

MBT2222ADW1T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MBT2222ADW1T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MBT2222ADW1T?

For technical support, including MBT2222ADW1T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBT2222ADW1T requirements.

6.How does Aetrix verify that MBT2222ADW1T is sourced from the original manufacturer or authorized distributors?

All MBT2222ADW1T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBT2222ADW1T meets industry standards.

7.What is the process for return or replacement of MBT2222ADW1T?

All MBT2222ADW1T units undergo pre-shipment inspection (PSI). If there is an issue with MBT2222ADW1T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MBT2222ADW1T part is unused and in its original packaging.

Return procedure for MBT2222ADW1T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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