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onsemi MBT35200MT1
- Part No.:
- MBT35200MT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
MBT35200MT1.pdf
- Description:
- TRANS PNP 35V 2A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:21,000
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Product details
Overview
MBT35200MT1 from onsemi is a high-current PNP silicon switching transistor in TSOP−6 (Case 318G) package, rated for −35 VCEO, −2.0 A continuous collector current, and 1.0 W power dissipation on FR-4 with 1.0 × 1.0 inch copper pad. It delivers low VCE(sat) of −0.15 V at −1.2 A/−0.012 A drive and supports fast load switching in portable battery-powered systems.
For engineers reviewing the MBT35200MT1 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal performance data, TSOP−6 terminal mapping, AEC−Q101 qualification status, and validated alternative transistors for load management designs requiring robust PNP switching under −35 V and −2 A conditions.
Technical Context
This device operates as a single high-current PNP bipolar junction transistor optimized for DC load switching-specifically for reverse-polarity protection, battery disconnect, and power rail enable functions in space-constrained portable electronics. Its design targets stable hFE ≥ 100 across −1.0 A to −2.0 A and low saturation voltage under pulsed and continuous operation.
The MBT35200MT1 features dual-collector configuration (pins 1, 2, 5, 6 tied internally), enabling higher current handling and improved thermal spreading via multiple parallel emitter paths. Thermal resistance is specified at RJL = 80 °C/W to lead #1, supporting PCB-level thermal management with localized copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −35 V - Maximum safe collector-emitter blocking voltage in open-base condition; defines usable supply rail range for high-side PNP switch applications. |
| IC (continuous) | −2.0 A - Continuous DC load current capability at TA = 25°C with 1.0×1.0 inch FR-4 copper pad; sets minimum trace width and heatsinking requirements. |
| VCE(sat) | −0.15 V max at IC = −1.2 A, IB = −0.012 A - Low conduction loss enables <180 mW dissipation per switch event, critical for thermally limited handheld devices. |
| hFE | 100–400 - DC current gain range ensures reliable base drive sizing across production lots and temperature extremes (−55°C to +150°C). |
| fT | 100 MHz - Sufficient bandwidth for fast turn-on/turn-off (ton = 35 ns, toff = 225 ns), supporting PWM-based load control up to ~1–2 MHz. |
| RJL | 80 °C/W - Junction-to-lead thermal resistance enables direct thermal coupling to PCB ground plane or metal heatsink through lead #1. |
| TJ range | −55°C to +150°C - Full automotive-grade operating envelope, validated per AEC−Q101 stress test requirements. |
Pinout & Package
MBT35200MT1 uses the TSOP−6 package (Case 318G), measuring 3.00 × 1.50 × 0.90 mm with 0.95 mm pitch. The package features exposed lead frame for enhanced thermal conduction and is Pb-free, halogen-free, and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Internally connected collector terminals; provide parallel current paths and lower effective RDS(on)-equivalent resistance for high-current switching. |
| 3 | Base | Control input node; requires −12 mA typical drive for full saturation at −1.2 A load; base resistor selection must account for hFE min = 100. |
| 4 | Emitter | Main current return path; connects to system ground or low-side reference; layout must minimize inductance for fast turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| AEC−Q101 qualified | Validated for automotive load-switching applications including infotainment power sequencing and body control modules. |
| Low VCE(sat) at high current | −0.15 V max at −1.2 A enables <0.18 W conduction loss-reducing thermal load in sealed portable enclosures. |
| Dual-collector architecture | Pins 1/2/5/6 share collector node, distributing current and lowering thermal hotspot density across the die and package leads. |
| High fT and fast switching | 100 MHz fT, 35 ns ton, 225 ns toff support efficient PWM dimming and dynamic load enable/disable without excessive EMI. |
| Extended temperature operation | Rated for −55°C to +150°C junction temperature-enables use in under-hood or industrial edge computing environments. |
Applications
| Smartphone Power Sequencing | Automotive Infotainment Supply Enable |
|---|---|
Use Scenario: Controlled power-up/down of camera modules, display backlight drivers, or USB-C port controllers during system sleep/wake transitions. IC Role / Device Role / Timing Role: High-side PNP load switch managing 3.3 V or 5 V auxiliary rails with precise timing and low leakage. Use Value: VCE(sat) ≤ −0.15 V minimizes voltage droop during wake-up; AEC−Q101 qualification ensures reliability in mobile consumer devices with thermal cycling. |
Use Scenario: Enabling/disabling 12 V accessory power to head unit processors or audio amplifiers based on ignition signal or CAN bus command. IC Role / Device Role / Timing Role: Reverse-polarity protected, high-current PNP switch placed between battery and downstream regulator input. Use Value: −35 V VCEO withstands load-dump transients; RJL = 80 °C/W allows direct thermal coupling to chassis ground for sustained 2 A operation. |
| Industrial Handheld Scanner Power Control | Medical Portable Monitor Battery Isolation |
Use Scenario: Isolating Li-ion battery from main logic board during firmware update or fault condition to prevent unintended operation. IC Role / Device Role / Timing Role: Fail-safe battery disconnect switch activated by microcontroller GPIO with internal pull-down base bias. Use Value: ICBO ≤ −0.1 A cutoff current ensures <100 nA standby leakage; −55°C to +150°C rating supports sterilization and cold-storage use cases. |
Use Scenario: Managing dual-battery switchover in portable ECG or pulse oximeter units where uninterrupted power is critical during hot-swap events. IC Role / Device Role / Timing Role: Low-loss, high-reliability PNP switch in battery path with integrated ESD protection (HBM Class 3). Use Value: Cibo = 650 pF and Cobo = 100 pF limit capacitive coupling noise into sensitive analog front-end circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBT35200MT1G | Identical electrical specs and package; differs only in Pb-free marking ('G' suffix) and tape-and-reel packaging (3,000 pcs/reel vs. MBT35200MT1's unspecified shipping format). | No functional difference; used interchangeably where RoHS compliance and standard reel logistics are required. | Select MBT35200MT1G when sourcing from authorized distributors with standard tape-and-reel fulfillment; verify date code compatibility with production lot traceability. |
| ZXTN25050DFHTA | PNP transistor in SOT-23-6 package, −50 V VCEO, −0.5 A IC, higher VCE(sat) (−0.35 V @ −0.3 A), lower thermal resistance (RJA = 250 °C/W). | Lower current rating limits use to sub-500 mA loads; smaller footprint suits ultra-compact designs but lacks MBT35200MT1's 2 A capability. | Choose ZXTN25050DFHTA only for space-constrained, lower-power applications where −50 V rating is essential and thermal budget permits higher saturation loss. |
Compared with MBT35200MT1, MBT35200MT1G offers identical performance with standardized RoHS-compliant packaging, while ZXTN25050DFHTA trades current capacity and thermal efficiency for smaller size and higher voltage margin-making it suitable only for light-load, high-voltage niche cases.
Availability
MBT35200MT1 is available at Aetrix Electronics and suitable for smartphone power sequencing, automotive infotainment supply enable, and industrial handheld scanner power control requiring stable component supply, long-term lifecycle support, and AEC−Q101-qualified reliability.
Supply support for MBT35200MT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MBT35200MT1 belongs to onsemi's high-current PNP switching transistor product line, engineered specifically for robust load management in portable and automotive electronics where low saturation voltage, AEC−Q101 qualification, and thermal resilience are mandatory.
FAQ
Is MBT35200MT1 pin-compatible with other TSOP−6 PNP transistors?
No-MBT35200MT1 uses Style 6 pinout (pins 1/2/5/6 = collector, pin 3 = base, pin 4 = emitter), which differs from common dual-transistor or MOSFET TSOP−6 layouts. Always verify pin mapping against the official onsemi mechanical drawing 98ASB14888C before PCB layout. MBT35200MT1 is not a drop-in replacement for SMBT35200MT1G or ZXTN25050DFHTA due to distinct terminal assignments and current ratings.
What is the maximum continuous current rating for MBT35200MT1 at 85°C ambient?
At TA = 85°C, MBT35200MT1's continuous collector current is derated from −2.0 A (at 25°C) using PD = 1.0 W and RJA = 120 °C/W. This yields a practical IC limit of approximately −1.4 A to maintain TJ ≤ +150°C. Derating curves in Figure 8 of the datasheet confirm safe operation up to −1.6 A at 85°C with adequate copper area.
Does MBT35200MT1 support pulsed operation beyond its DC ratings?
Yes-MBT35200MT1 supports single-pulse operation up to 1.75 W (PDsingle) for durations <10 seconds, as specified in Note 2 & 3. This enables short-duration surge handling (e.g., motor startup, capacitor inrush) beyond its 1.0 W DC limit, provided duty cycle and thermal recovery time comply with Figure 9's normalized thermal response curve.
How does the AEC−Q101 qualification impact MBT35200MT1's use in non-automotive designs?
AEC−Q101 qualification certifies MBT35200MT1 for extended temperature operation (−55°C to +150°C), enhanced ESD robustness (HBM Class 3), and accelerated life testing-making it highly reliable even in demanding industrial, medical, and portable consumer applications. Designers benefit from proven field reliability without additional qualification effort.
Can MBT35200MT1 be used in linear amplifier configurations?
No-MBT35200MT1 is optimized for switching operation, not linear amplification. Its SOA curve (Figure 8) shows limited safe operating area in the linear region, and hFE variation above VCE = −1 V is not characterized. For analog gain stages, select purpose-built general-purpose PNP transistors like MPSA92 or BC807 series instead of MBT35200MT1.
MBT35200MT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 35 V
- Vce Saturation (Max) @ Ib, Ic:
- 310mV @ 20mA, 2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1.5A, 1.5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
MBT35200MT1 FAQ
1.How can I place an order for MBT35200MT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBT35200MT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBT35200MT1 reliable?
The price and inventory of MBT35200MT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBT35200MT1 is usually 5 days.
3.What payment methods are accepted for MBT35200MT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBT35200MT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBT35200MT1?
MBT35200MT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBT35200MT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBT35200MT1?
For technical support, including MBT35200MT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBT35200MT1 requirements.
6.How does Aetrix verify that MBT35200MT1 is sourced from the original manufacturer or authorized distributors?
All MBT35200MT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBT35200MT1 meets industry standards.
7.What is the process for return or replacement of MBT35200MT1?
All MBT35200MT1 units undergo pre-shipment inspection (PSI). If there is an issue with MBT35200MT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBT35200MT1 part is unused and in its original packaging.
Return procedure for MBT35200MT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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