NXP Semiconductors MC33HB2000EK

Overview

MC33HB2000EK from NXP Semiconductors is a SPI-programmable, AEC-Q100 Grade 1 qualified H-bridge power IC for brushed DC motor control in automotive powertrain systems. It delivers 10 A peak output current, supports 5.0 V to 28 V VPWR operation, integrates low-R_DS(on) MOSFETs (235 mΩ max at 150 °C), and provides real-time analog current feedback via CFB with <5.0 % error - used in electronic throttle and EGR actuators.

For engineers reviewing the MC33HB2000EK datasheet, MC33HB2000EK pinout, MC33HB2000EK application, or MC33HB2000EK equivalent, key selection considerations include its 32-pin SOICW exposed-pad package, junction-to-case thermal resistance of 0.66 °C/W, eight SPI-selectable slew rates (0.25–16 V/μs), four programmable current limits (5.4/7.0/8.8/10.7 A), and ISO 26262-compliant diagnostic reporting.

Technical Context

The MC33HB2000EK implements a monolithic SMARTMOS H-bridge with four N-channel power MOSFETs, configurable for full-bridge or half-bridge operation via SPI. Its integrated charge pump enables full enhancement of high-side switches, while internal current mirrors feed back 0.25 % of load current to the CFB pin with guaranteed accuracy across 2.0–10 A.

Diagnostic architecture includes SPI-accessible fault registers monitoring short-to-ground, short-to-VPWR, open load, overtemperature (with warning and shutdown), VPWR over/undervoltage, and charge pump faults. Thermal management leverages an exposed thermal pad and junction-to-board resistance of 7.1 °C/W, enabling stable operation up to T_J = 150 °C continuous.

Key Specifications

Pinout & Package

The MC33HB2000EK uses a 32-pin SOICW package with exposed thermal pad (EP), optimized for automotive PCB assembly and thermal dissipation. Pin numbering follows standard SOICW layout with index area at pin 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge motor driver applications.

Compared with MC33HB2000FK and MC33HB2000AES, the MC33HB2000EK offers the most manufacturable SOICW footprint with balanced thermal performance (R_ΘJA = 23.9 °C/W) and full ground domain separation - ideal for prototyping, service replacement, and medium-volume automotive modules where assembly yield and test accessibility matter.

Availability

MC33HB2000EK is available at Aetrix Electronics and suitable for electronic throttle control, exhaust gas recirculation (EGR), and turbocharger actuation requiring stable component supply across automotive production lifecycles.

Supply support for MC33HB2000EK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The MC33HB2000EK belongs to NXP's SMARTMOS automotive power driver family, engineered specifically for ISO 26262-compliant brushed DC motor control in powertrain and chassis subsystems.

FAQ

What is the maximum allowable VPWR transient voltage for the MC33HB2000EK?

The MC33HB2000EK supports a maximum VPWR transient voltage of 40 V during events such as load dump. This rating is specified in Table 3 of the datasheet and applies across the full operating temperature range. Exceeding 40 V may cause avalanche breakdown; external clamping (e.g., Zener diode or TVS) is recommended for systems prone to higher transients. The MC33HB2000EK itself does not include internal transient suppression beyond this limit.

Does the MC33HB2000EK require an external charge pump capacitor?

Yes, the MC33HB2000EK requires an external 100 nF capacitor connected between the CCP pin and VPWR. This reservoir capacitor is mandatory for proper operation of the internal charge pump, which biases the high-side MOSFET gates. Omitting it will prevent full enhancement of the high-side switches, resulting in excessive conduction loss, thermal stress, and potential failure. The MC33HB2000EK datasheet explicitly states "The part does not operate properly without the external reservoir capacitor."

How accurate is the CFB current feedback signal on the MC33HB2000EK?

The CFB pin on the MC33HB2000EK provides a ground-referenced analog signal equal to 0.25 % of the high-side load current, with accuracy better than ±5.0 % across a 2.0 A to 10 A load range. This specification is validated over temperature (−40 °C to 150 °C) and supply voltage (5–28 V). The MC33HB2000EK achieves this via a trimmed internal current mirror, eliminating need for external shunt resistors in many torque-sensing applications.

Can the MC33HB2000EK operate without SPI configuration?

Yes, the MC33HB2000EK can operate without SPI communication using default settings: 2.0 V/μs slew rate and 7.0 A current limit threshold. All protection features (overtemperature, short-circuit, undervoltage) remain fully active. Parallel control via ENBL, DIS, IN1, and IN2 is always available. However, advanced diagnostics, slew rate tuning, and current limit adjustment require SPI access - the MC33HB2000EK retains full functionality in standalone mode but sacrifices configurability.

What is the thermal resistance from junction to case (bottom) for the MC33HB2000EK?

The MC33HB2000EK has a junction-to-case (bottom) thermal resistance (R_ΘJCBOTTOM) of 0.66 °C/W, as specified in Table 4 of the datasheet under "MC33HB2000EK THERMAL RESISTANCE AND PACKAGE DISSIPATION RATINGS". This value assumes direct thermal contact between the exposed pad (EP) and a low-impedance PCB copper pour. It is measured per JEDEC JESD51-8 and forms the basis for calculating maximum allowable power dissipation in thermally constrained designs.