NXP Semiconductors MC33HB2000EKR2

Overview

MC33HB2000EKR2 from NXP Semiconductors is a SMARTMOS monolithic H-bridge power IC for brushed DC and servo motor control, featuring SPI programmability, 10 A peak output current, 3.0 A nominal continuous current, <5.0 % current feedback error via CFB pin, and AEC-Q100 Grade 1 qualification for automotive use in throttle and EGR actuators.

For engineers reviewing the MC33HB2000EKR2 datasheet, MC33HB2000EKR2 pinout, MC33HB2000EKR2 application, or MC33HB2000EKR2 equivalent, key selection criteria include SPI-configurable slew rates (0.25–16 V/μs), four selectable current limits (5.4/7.0/8.8/10.7 A), integrated diagnostics (open load, short-to-battery/ground, overtemperature), and thermal resistance <1.0 °C/W (junction-to-case).

Technical Context

The MC33HB2000EKR2 implements a full H-bridge using four internal N-channel MOSFETs with max R_DS(on) of 235 mΩ at T_J = 150 °C, supporting PWM-controlled bidirectional motor drive. Its SPI interface enables real-time configuration of slew rate, current limit, and bridge mode (H-bridge or half-bridge), while fault reporting includes charge pump status, VPWR over/undervoltage, and per-output short-circuit detection.

Thermal management relies on an exposed thermal pad (EP) and junction-to-case thermal resistance as low as 0.39 °C/W (HVQFN variant), enabling stable operation up to T_J = 150 °C. The device supports 5.0–28 V VPWR input, withstands 40 V transients, and features rail-to-rail MISO output referenced to VDDQ (3.3–5.0 V logic compatible).

Key Specifications

Pinout & Package

MC33HB2000EKR2 uses a 28-pin HVQFN package with exposed thermal pad (EP), optimized for high-power density and thermal performance in automotive ECUs. Pin count and layout match the MC33HB2000AES variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge motor driver applications.

Compared with MC33887PEKR2 and DRV8876NQRHBRQ1, the MC33HB2000EKR2 uniquely combines SPI-configurable slew rate, four current limit options, and <5 % CFB accuracy in a thermally optimized HVQFN package-making it optimal for ASIL-B automotive actuators requiring both precision and ruggedness.

Availability

MC33HB2000EKR2 is available at Aetrix Electronics and suitable for electronic throttle control, exhaust gas recirculation (EGR), turbocharger wastegate actuation, and electric coolant pump applications requiring stable component supply across automotive production lifecycles.

Supply support for MC33HB2000EKR2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in functional safety and AEC-Q100 compliance.

The MC33HB2000EKR2 belongs to NXP's SMARTMOS automotive power driver family, engineered specifically for ISO 26262-compliant motor control in powertrain and chassis systems where diagnostic coverage and thermal resilience are critical.

FAQ

What is the maximum allowable VPWR transient voltage for MC33HB2000EKR2?

The MC33HB2000EKR2 supports a maximum VPWR transient voltage of 40 V, as specified in its absolute maximum ratings. This rating covers load-dump events common in 12 V and 24 V automotive systems. Exceeding 40 V may cause avalanche breakdown; external clamping (e.g., Zener diode or TVS) is recommended for systems with higher transient risk. The MC33HB2000EKR2 integrates overvoltage protection that places the load in high-side recirculation mode when triggered.

Does MC33HB2000EKR2 require an external charge pump capacitor?

Yes, MC33HB2000EKR2 requires an external 100 nF capacitor connected between the CCP pin and VPWR to enable proper operation of its internal charge pump. Without this capacitor, the high-side MOSFETs cannot turn fully ON, resulting in excessive R_DS(on), overheating, and potential failure. The CCP pin must not be left floating or tied directly to ground - it serves exclusively as the reservoir node for the internal charge pump circuitry.

How does the CFB pin on MC33HB2000EKR2 provide current feedback?

The CFB pin on MC33HB2000EKR2 delivers a ground-referenced analog current proportional to the high-side output current at 0.25 % scaling (i.e., 1 A load → 2.5 mA CFB). Its accuracy is better than ±5.0 % across 2–10 A loads. To convert to voltage, an external resistor (R_CFB) is connected from CFB to GND; typical values yield 10–100 mV/A. An optional RC filter improves noise immunity. The MC33HB2000EKR2 does not include an integrated ADC - external MCU or amplifier is required for digitization.

Can MC33HB2000EKR2 operate without SPI communication?

Yes, MC33HB2000EKR2 can operate without SPI: it defaults to 2.0 V/μs slew rate and 7.0 A current limit threshold. All parallel control inputs (ENBL, DIS, IN1, IN2) remain fully functional. SPI is optional for advanced configuration - not required for basic H-bridge operation. However, diagnostic reporting (fault flags, temperature warnings) and dynamic parameter updates (e.g., changing current limit mid-operation) are only accessible via SPI. The MC33HB2000EKR2 remains AEC-Q100 qualified and ISO 26262-ready even in non-SPI mode.

What is the thermal resistance (R_ΘJC) of MC33HB2000EKR2 in its HVQFN package?

The MC33HB2000EKR2 in 28-pin HVQFN package has a junction-to-case (bottom) thermal resistance (R_ΘJCBOTTOM) of 0.39 °C/W, as documented in Table 4 of the datasheet. This value assumes proper soldering of the exposed thermal pad (EP) to a large, low-impedance copper area on the PCB. This ultra-low thermal resistance enables efficient heat transfer from the die to the board, supporting continuous 3.0 A operation without external heatsinking - critical for compact automotive ECU designs where airflow is limited.