Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MCH3109-TL-E

Name: MCH3109-TL-E
Brand: onsemi
SKU: MCH3109-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MCH3109-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: MCH3109-TL-E.pdf

Description:: TRANS PNP 30V 3A 3-MCPH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,234

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MCH3109-TL-E from onsemi is a PNP bipolar junction transistor in MCPH3 (SC-70/SOT-323) package, rated for –30 V V_CEO, –3 A I_C, and low –120 mV typical V_CE(sat) at –1.5 A/–30 mA, optimized for high-speed switching in relay and lamp driver circuits.

For engineers reviewing the MCH3109-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, ultrasmall 0.85 mm mounting height, guaranteed –30 V breakdown, –155 mV max V_CE(sat) at I_C/I_B = 50, and 450 MHz f_T performance under specified bias conditions.

Technical Context

The MCH3109-TL-E operates as a discrete PNP BJT with fixed emitter-base-collector terminal assignment and no integrated biasing or protection circuitry. Its design centers on low-saturation-voltage switching with validated thermal performance on ceramic substrates (0.8 W P_C at T_a = 25°C).

Electrical behavior is defined by DC current gain h_FE = 200–560 at V_CE = –2 V, I_C = –500 mA; switching times include t_on = 30 ns, t_stg = 300 ns, and t_f = 15 ns under standardized test conditions with R_L and pulse width control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–30 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
I_C	–3 A - Continuous DC collector current rating defining steady-state power handling capability
V_CE(sat)	–120 mV typ. at I_C = –1.5 A, I_B = –30 mA - Low saturation voltage enabling minimal conduction loss in switching applications
f_T	450 MHz - Gain-bandwidth product confirming suitability for high-speed digital and pulse switching up to ~100 MHz practical operation
h_FE	200–560 at V_CE = –2 V, I_C = –500 mA - DC current gain range supporting reliable base drive design across temperature
P_C	0.8 W on 600 mm² × 0.8 mm ceramic substrate - Validated power dissipation limit guiding heatsinking requirements
t_f	15 ns - Fall time measured under standard test circuit, critical for minimizing switching transition losses

Pinout & Package

Package: MCPH3 (JEITA SC-70 / JEDEC SOT-323), ultrasmall surface-mount outline with 0.65 mm lead pitch and 0.85 mm maximum mounting height.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires negative bias relative to emitter to turn on PNP device
2	Emitter	Current source terminal; connected to higher potential rail in typical high-side switch configuration
3	Collector	Current sink terminal; delivers load current to ground or lower-potential node when active

Key Features

Feature	Design Value
Low V_CE(sat)	–120 mV typical enables <150 mW conduction loss at 1.5 A, reducing thermal stress in compact layouts
High-speed switching	30 ns turn-on and 15 ns fall time support PWM frequencies >5 MHz with minimal dead-time overhead
Ultrasmall MCPH3 package	0.85 mm profile and 2.1 × 1.6 mm footprint allow placement in space-constrained consumer and portable electronics
High allowable power dissipation	0.8 W rating on ceramic substrate supports sustained 3 A operation without external heatsink in thermally managed PCBs
MBIT process technology	Enables tight parameter distribution and stable h_FE across temperature, improving batch-to-batch consistency in production

Applications

Relay Drivers	Lamp Drivers
Use Scenario: Driving electromagnetic relays in industrial PLC output modules requiring fast turn-off to prevent contact arcing. IC Role / Device Role / Timing Role: PNP switch controlling relay coil current path with precise timing governed by t_stg = 300 ns and t_f = 15 ns. Use Value: Low V_CE(sat) minimizes coil voltage drop during hold state, while high h_FE reduces required base drive current.	Use Scenario: Switching incandescent or LED indicator lamps in automotive dashboards where board space and thermal management are constrained. IC Role / Device Role / Timing Role: High-current PNP switch delivering up to –3 A peak load current with controlled rise/fall edges. Use Value: 0.85 mm mounting height enables direct integration beneath compact lens assemblies; 450 MHz f_T ensures clean switching even with parasitic trace inductance.
Motor Drivers	Flash Circuitry
Use Scenario: Controlling small DC brush motors in battery-powered tools where efficiency and thermal density are critical. IC Role / Device Role / Timing Role: Low-loss PNP switch in half-bridge high-side position, operating with I_C pulses up to –5 A. Use Value: –120 mV V_CE(sat) limits conduction loss to <600 mW at 5 A, reducing localized heating in motor H-bridge PCB zones.	Use Scenario: Triggering xenon flash tubes in portable cameras using brief high-current pulses. IC Role / Device Role / Timing Role: Fast-switching PNP transistor delivering controlled –5 A I_CP pulses with t_on = 30 ns for precise flash timing. Use Value: Verified 300 ns storage time ensures rapid turn-off after pulse, preventing unintended re-triggering or tube overheating.

Relay Drivers

Lamp Drivers

Use Scenario: Driving electromagnetic relays in industrial PLC output modules requiring fast turn-off to prevent contact arcing.

IC Role / Device Role / Timing Role: PNP switch controlling relay coil current path with precise timing governed by t_stg = 300 ns and t_f = 15 ns.

Use Value: Low V_CE(sat) minimizes coil voltage drop during hold state, while high h_FE reduces required base drive current.

Use Scenario: Switching incandescent or LED indicator lamps in automotive dashboards where board space and thermal management are constrained.

IC Role / Device Role / Timing Role: High-current PNP switch delivering up to –3 A peak load current with controlled rise/fall edges.

Use Value: 0.85 mm mounting height enables direct integration beneath compact lens assemblies; 450 MHz f_T ensures clean switching even with parasitic trace inductance.

Motor Drivers

Flash Circuitry

Use Scenario: Controlling small DC brush motors in battery-powered tools where efficiency and thermal density are critical.

IC Role / Device Role / Timing Role: Low-loss PNP switch in half-bridge high-side position, operating with I_C pulses up to –5 A.

Use Value: –120 mV V_CE(sat) limits conduction loss to <600 mW at 5 A, reducing localized heating in motor H-bridge PCB zones.

Use Scenario: Triggering xenon flash tubes in portable cameras using brief high-current pulses.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor delivering controlled –5 A I_CP pulses with t_on = 30 ns for precise flash timing.

Use Value: Verified 300 ns storage time ensures rapid turn-off after pulse, preventing unintended re-triggering or tube overheating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CEO = –40 V, I_C = –200 mA, V_CE(sat) = –300 mV @ –50 mA - higher voltage rating but lower current and higher saturation voltage	Lower power switching only; unsuitable for >500 mA loads due to thermal and saturation limitations	Select when higher V_CEO margin is prioritized over current capacity and efficiency
DXT3906-7-F	V_CEO = –40 V, I_C = –2 A, V_CE(sat) = –200 mV @ –1 A - same package but 80 mV higher V_CE(sat) and reduced f_T (250 MHz)	Acceptable for relay/lamp drivers at reduced speed; not recommended for >1 MHz PWM or flash pulse fidelity	Select when supply chain availability of MCH3109-TL-E is constrained and moderate V_CE(sat) increase is acceptable

Compared with MCH3109-TL-E, MMBT3906LT1G trades current capability and efficiency for higher voltage headroom, while DXT3906-7-F offers similar current rating but sacrifices switching speed and saturation performance-making MCH3109-TL-E optimal for high-efficiency, high-speed PNP switching where both –3 A and sub-150 mV V_CE(sat) are required.

Availability

MCH3109-TL-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and motor drivers requiring stable component supply, RoHS-compliant packaging, and consistent parametric performance across production batches.

Supply support for MCH3109-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and IoT applications.

The MCH3109-TL-E belongs to onsemi's discrete bipolar transistor portfolio designed specifically for high-reliability, high-speed switching in space-constrained end equipment requiring robust PNP performance.

FAQ

What is the polarity and transistor type of MCH3109-TL-E?

MCH3109-TL-E is a PNP bipolar junction transistor. Its polarity is confirmed by absolute maximum ratings showing negative values for V_CEO (–30 V), I_C (–3 A), and V_CE(sat) (–120 mV typ.), and by electrical characteristics specifying V_CE and I_C with minus signs in all test conditions. This defines its role as a high-side switch with emitter connected to the positive rail.

What package does MCH3109-TL-E use and what are its mechanical dimensions?

MCH3109-TL-E uses the MCPH3 package, equivalent to JEITA SC-70 and JEDEC SOT-323. Its dimensions are 2.1 mm × 1.6 mm footprint with 0.65 mm lead pitch and a maximum mounting height of 0.85 mm. The mass is 0.007 g, and it is supplied in tape-and-reel format (3,000 pcs./reel) with Pb-free finish per the "TL-E" suffix.

What is the maximum continuous collector current rating for MCH3109-TL-E?

The maximum continuous collector current for MCH3109-TL-E is –3 A at T_a = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes mounting on a 600 mm² × 0.8 mm ceramic substrate. Derating applies above 25°C ambient, with zero dissipation reached at approximately 160°C per the P_C vs. T_a curve.

Does MCH3109-TL-E have a documented gain-bandwidth product, and what is its value?

Yes, MCH3109-TL-E has a documented gain-bandwidth product (f_T) of 450 MHz, measured at V_CE = –10 V and I_C = –500 mA. This value is provided in the Electrical Characteristics table under "Gain-Bandwidth Product" and confirms its capability for high-speed switching applications such as PWM control and flash triggering.

What are the validated switching times for MCH3109-TL-E and under what test conditions?

MCH3109-TL-E has validated switching times of t_on = 30 ns, t_stg = 300 ns, and t_f = 15 ns. These values are measured using the standard switching time test circuit shown in the datasheet (No.7129-3/7), with V_CC = 12 V, V_BE = –5 V, R_L = 50 Ω, and I_C = –500 mA, confirming its suitability for sub-100 ns digital switching.

MCH3109-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 155mV @ 75mA, 1.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 800 mW

Frequency - Transition:: 380MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-MCPH

MCH3109-TL-E FAQ

1.How can I place an order for MCH3109-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for MCH3109-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MCH3109-TL-E reliable?

The price and inventory of MCH3109-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MCH3109-TL-E is usually 5 days.

3.What payment methods are accepted for MCH3109-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MCH3109-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MCH3109-TL-E?

MCH3109-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MCH3109-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MCH3109-TL-E?

For technical support, including MCH3109-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MCH3109-TL-E requirements.

6.How does Aetrix verify that MCH3109-TL-E is sourced from the original manufacturer or authorized distributors?

All MCH3109-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MCH3109-TL-E meets industry standards.

7.What is the process for return or replacement of MCH3109-TL-E?

All MCH3109-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with MCH3109-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MCH3109-TL-E part is unused and in its original packaging.

Return procedure for MCH3109-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…