onsemi MCH6123-TL-E

Overview

MCH6123-TL-E from onsemi is a PNP bipolar junction transistor (BJT) rated for −50 V V_CEO, −3 A I_C, and low −230 mV typical V_CE(sat) at −1 A/−50 mA drive, fabricated using MBIT process in an ultrasmall MCPH6 package (0.85 mm height). It serves as a high-current switching element in DC-DC converter power stages, relay drivers, and motor control circuits where compact size and thermal efficiency are critical.

For engineers reviewing the MCH6123-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified −50 V breakdown ratings, confirmed −230 mV V_CE(sat) at 1 A, validated 390 MHz f_T, and MCPH6 package compatibility with high-density PCB layouts requiring <1 mm profile.

Technical Context

This PNP BJT employs onsemi's MBIT (Modified Bipolar Integrated Technology) process to achieve high current gain (h_FE = 200–560 at −100 mA), fast switching (t_on = 30 ns, t_f = 18 ns), and low saturation voltage across its full −3 A operating range. Its symmetrical collector terminal layout (pins 1, 2, 5, 6) supports parallel current handling and thermal spreading on ceramic substrates.

The device operates within −55°C to +150°C storage and junction temperature limits, with guaranteed −50 V V_(BR)CEO and −6 V V_(BR)EBO. Its Cob = 24 pF at −10 V V_CB and f_T = 390 MHz enable stable performance in medium-frequency switching applications up to several hundred kHz.

Key Specifications

Pinout & Package

Package: MCPH6 (JEITA SC-88 / JEDEC SC-70-6 / SOT-363), 0.85 mm max height, 2.1 mm × 1.6 mm footprint, Pb-free, tape-and-reel (3,000 pcs/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT switching applications.

Compared with MCH6123-TL-E, MMBT6427LT1G offers lower cost but sacrifices 5× current capacity and 30% higher conduction loss; DXT6123P5-13 matches voltage/current specs but trades 0.85 mm height for thermal pad benefits - selection depends on whether Z-height or thermal pad access is the dominant constraint.

Availability

MCH6123-TL-E is available at Aetrix Electronics and suitable for DC-DC converter power stages, relay driver circuits, and brushed DC motor control applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for MCH6123-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The MCH6123-TL-E belongs to onsemi's high-speed, low-saturation-voltage PNP BJT product line, engineered specifically for compact, thermally efficient switching in space-constrained power management and actuator drive systems.

FAQ

What is the maximum continuous collector current rating for the MCH6123-TL-E?

The MCH6123-TL-E has a maximum continuous collector current (I_C) rating of −3 A at T_a = 25°C when mounted on a ceramic substrate (600 mm² × 0.8 mm). This rating assumes proper thermal management; derating is required above 25°C ambient per the PC–Ta curve in the datasheet. The MCH6123-TL-E supports pulsed operation up to −6 A (I_CP) for durations ≤1 ms.

Does the MCH6123-TL-E have a built-in base-emitter resistor?

No, the MCH6123-TL-E is a standard PNP bipolar transistor without integrated base resistors. It requires external base drive circuitry - typically a current-limiting resistor or active driver - to establish the required −50 mA base current for saturation at −1 A collector current. The MCH6123-TL-E pinout provides dedicated base (pin 3) and emitter (pin 4) terminals for conventional biasing.

What is the typical collector-to-emitter saturation voltage of the MCH6123-TL-E under standard test conditions?

The typical collector-to-emitter saturation voltage (V_CE(sat)) of the MCH6123-TL-E is −230 mV at I_C = −1 A and I_B = −50 mA, measured at T_a = 25°C. A second condition specifies −650 mV max at I_C = −2 A and I_B = −100 mA. These values are confirmed in the Electrical Characteristics table of the official onsemi datasheet for MCH6123-TL-E.

Can the MCH6123-TL-E be used in place of an NPN transistor in a circuit?

No - the MCH6123-TL-E is a PNP transistor and cannot directly replace an NPN device without reversing polarity, adjusting biasing, and reconfiguring the surrounding circuit topology. Its complementary NPN counterpart in the same family is not documented in the provided datasheet. Substituting the MCH6123-TL-E for an NPN requires redesigning the drive logic, power rail connections, and protection network to accommodate PNP current flow direction and voltage polarities.

What package type does the MCH6123-TL-E use, and is it RoHS compliant?

The MCH6123-TL-E uses the MCPH6 package (JEITA SC-88 / JEDEC SC-70-6 / SOT-363), measuring 2.1 mm × 1.6 mm with a maximum height of 0.85 mm. It is Pb-free and RoHS compliant, as confirmed in the "Product & Package Information" section of the onsemi datasheet, which explicitly states "Pb Free" and references JEDEC/IEC 61249-2-21 compliance for the MCH6123-TL-E variant.