Monolithic Power Systems Inc. MCS1823GQTE-330BAL-Z

Overview

MCS1823GQTE-330BAL-Z from Monolithic Power Systems is a bidirectional linear Hall-effect current sensor IC with integrated over-current detection (OCD), designed for high-accuracy AC/DC current sensing in space-constrained power systems. It features ±30A rated current range, 44 mV/A sensitivity, 0.6 mΩ internal conductor resistance, ±2.5% total output error, and 120 kHz bandwidth - enabling precise motor phase current monitoring in BLDC inverters.

For engineers reviewing the MCS1823GQTE-330BAL-Z datasheet, MCS1823GQTE-330BAL-Z pinout, MCS1823GQTE-330BAL-Z application, or MCS1823GQTE-330BAL-Z equivalent, this device delivers ratiometric analog output, factory-trimmed offset stability, differential magnetic field rejection, fast 1 µs OCD response, and TQFN-12 (3mm×3mm) ultra-small footprint for embedded power stage integration.

Technical Context

The MCS1823GQTE-330BAL-Z employs a differential Hall array to cancel stray magnetic fields, using spinning current technique for sub-15 mV offset drift over temperature. Its primary conductor (IP+/IP−) carries up to ±30A with 0.6 mΩ resistance, generating orthogonal magnetic fields sensed at two points (PMCF1 = 1.15 mT/A, PMCF2 = 0.25 mT/A) to produce a voltage proportional to current.

It integrates a dedicated OCD comparator with latched output (/OCD pin), configurable via external pull-up resistor (10–500 kΩ) to trigger between 50%–240% of IPMAX. The analog VOUT is ratiometric (VCC/2 at zero current), with 120 kHz small-signal bandwidth and 4 µs total response time from current step to valid output.

Key Specifications

Pinout & Package

TQFN-12 (3 mm × 3 mm, 0.5 mm pitch) package with exposed thermal pad; RoHS-compliant, halogen-free, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar linear Hall-effect current sensing applications.

Compared with ACS724LMATR-30AB-T and TMC1638-LA, the MCS1823GQTE-330BAL-Z uniquely combines ultra-small TQFN-12 size, analog ratiometric output, latched OCD, and 120 kHz bandwidth - making it optimal for space-constrained, high-speed analog feedback loops where minimal external components are critical.

Availability

MCS1823GQTE-330BAL-Z is available at Aetrix Electronics and suitable for motor control, switch-mode power supplies, automotive battery management, and audio amplifier protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for MCS1823GQTE-330BAL-Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Monolithic Power Systems (MPS) is a fabless semiconductor company specializing in high-performance power management ICs, including DC-DC converters, LED drivers, and precision analog sensors - headquartered in Kirkland, WA, with global design and support centers.

The MCS1823 product line targets compact, high-efficiency current sensing in power conversion and motor drive systems - engineered to replace bulky shunt-based solutions while delivering factory-calibrated accuracy, magnetic immunity, and integrated fault protection.

FAQ

What is the meaning of the 'BAL' suffix in MCS1823GQTE-330BAL-Z?

The 'BAL' suffix indicates a bidirectional current sensor variant with latched /OCD output and 3.3 V supply. Per MPS part numbering: 'B' = bidirectional, 'A' = absolute output mode (though this variant uses ratiometric VOUT per datasheet Table 1), 'L' = latched OCD. The '-Z' denotes tape-and-reel packaging. This configuration supports ±30 A sensing with immediate fault holdover until power reset.

Can MCS1823GQTE-330BAL-Z measure unidirectional current?

No - the 'B' in the part number explicitly denotes bidirectional operation. For unidirectional sensing (0–30 A), MPS offers variants like MCS1823GQTE-330URN (unidirectional, ratiometric) or MCS1823GQTE-330UAN (unidirectional, absolute). The BAL version's zero-current output is VCC/2 (1.65 V), and its output swings symmetrically above/below that point for positive/negative current flow.

How is the OCD threshold set, and what is its tolerance?

The OCD threshold is factory-set to ±100% of IPMAX (±30 A) and is fixed for the BAL variant. Unlike 'BRN' or 'BAN' versions, BAL does not support external resistor programming of OCD level. Its /OCD output triggers at ±30 A with ±10% error (±3 A absolute) over temperature, per datasheet Section 8: E/OCD = ±10%. No external resistor is required for basic operation.

Is the TQFN-12 package thermally enhanced, and what is the recommended layout?

Yes - the TQFN-12 includes an exposed thermal pad (EP) on the bottom center. MPS recommends soldering the EP to a minimum 12 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to inner ground plane. Keep IP+/IP− traces wide (>1.5 mm) and symmetrical; avoid routing noisy signals under the IC; place 0.1 µF ceramic bypass capacitor <2 mm from VCC–GND pins.

Does MCS1823GQTE-330BAL-Z provide galvanic isolation?

No - it provides basic functional isolation only, with VIOWM = 100 VPK per IEC 62368-1. It is not reinforced or double-isolated. The device relies on internal creepage/clearance and package molding for safety separation between primary current path (IP+/IP−) and secondary signal pins (VOUT, /OCD, GND). For >100 V working voltage or medical/safety-critical isolation, an external isolated amplifier or transformer-based solution is required.

What is the maximum continuous current the internal conductor can handle?

The internal conductor is rated for continuous ±30 A (IPMAX) with guaranteed linearity and ±2.5% error. While the conductor resistance is only 0.6 mΩ, thermal limits depend on PCB layout. At 30 A, power dissipation is 0.54 W; with proper thermal pad layout (≥12 mm² copper, 4+ vias), junction temperature stays within -40°C to +125°C operating range up to 105°C ambient. Derating is required above 85°C ambient.

How does the spinning current technique reduce offset drift?

The spinning current technique periodically rotates the Hall plate bias direction in the silicon die, averaging out process-induced mismatches and thermal gradients across the differential Hall array. This achieves <15 mV offset drift over -40°C to +125°C - eliminating the need for chopper-stabilized amplifiers and enabling stable DC current measurement without periodic auto-zero cycles.