NXP Semiconductors MD7P19130HR3

Overview

MD7P19130HR3 from Freescale Semiconductor is a laterally diffused N-channel RF power MOSFET designed for CDMA and W-CDMA base station amplifier stages operating at 1930–1990 MHz. It delivers 40 W average output power at 28 V with 20 dB power gain and 30% drain efficiency under single-carrier W-CDMA conditions, supporting Class AB/C operation in multicarrier cellular infrastructure.

For engineers reviewing the MD7P19130HR3 datasheet, MD7P19130HR3 pinout, MD7P19130HR3 application, or MD7P19130HR3 equivalent, key selection criteria include its 130 W CW P1dB, 10:1 VSWR ruggedness at 1960 MHz, integrated ESD protection (HBM Class 1C), and NI-780S-4 package thermal resistance of 0.31 °C/W at 130 W CW.

Technical Context

This device employs an internally matched lateral MOSFET architecture optimized for broadband RF power amplification in PCS/cellular bands. Its gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (1.9–3.4 V at IDQ = 1250 mA) enable stable Class AB biasing, while the −6.0 to +10 V gate-source voltage rating supports robust Class C drive.

Thermal design is anchored by a junction-to-case thermal resistance of 0.31 °C/W at 130 W CW, enabling high-reliability operation up to TJ = 225°C. The device's series-equivalent large-signal impedance (e.g., Zsource = 7.07 + j0.89 Ω, Zload = 1.55 − j2.79 Ω at 1960 MHz) is fully characterized for matching network synthesis in 50 Ω systems.

Key Specifications

Pinout & Package

MD7P19130HR3 is housed in the NI-780S-4 package (Case 465H-02, Style 1), a thermally enhanced ceramic/metal flange-mount RF power package with 4 terminals and integral heat slug. The package features low-inductance source grounding and optimized RF port geometry for minimal parasitic reactance at 2 GHz.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MD7P19130HSR3, MD7P19130HR3 offers superior thermal performance (0.31 vs. 0.36 °C/W) for high-duty-cycle W-CDMA; versus MRFE6VP61K25H, it provides Freescale's validated large-signal impedance models and tighter ACPR consistency across temperature.

Availability

MD7P19130HR3 is available at Aetrix Electronics and suitable for CDMA base station PA, W-CDMA multicarrier amplifier, Doherty power amplifier, and Class C cellular transmitter applications requiring stable component supply and long-lifecycle support.

Supply support for MD7P19130HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, specializing in LDMOS technology for cellular base stations.

The MD7P19130HR3 belongs to Freescale's MD7P family of high-efficiency RF power MOSFETs engineered specifically for 3G/4G macrocell and microcell base station amplifiers operating in the 1930–1990 MHz band.

FAQ

What is the maximum continuous drain current rating for MD7P19130HR3?

The MD7P19130HR3 does not specify a maximum continuous drain current (ID) rating directly; instead, its safe operating area is defined by thermal limits and voltage constraints. At 28 V drain supply and 1250 mA quiescent current, it delivers 40 W average W-CDMA output. The device's 225°C maximum junction temperature and 0.31 °C/W thermal resistance govern practical current handling under sustained CW or modulated loads. MD7P19130HR3 must be operated within the SOA curves provided in Figure 10 of its datasheet to ensure reliability.

Does MD7P19130HR3 require external gate protection diodes?

No, MD7P19130HR3 integrates ESD protection rated to HBM Class 1C (≥1 kV), Machine Model Class A, and CDM Class IV, eliminating the need for discrete gate protection diodes in standard PCB layouts. This internal protection is validated per JESD22-A114, JESD22-A115, and JESD22-C101 standards. MD7P19130HR3's −6.0 to +10 V gate-source voltage rating further enhances robustness against transient overvoltage events during hot-plug or mismatched load conditions.

Can MD7P19130HR3 be used in Doherty amplifier configurations?

Yes, MD7P19130HR3 is explicitly supported in Doherty topologies as shown in Figure 4 of its datasheet. Its dual-gate (VGSA/VGSB) and dual-drain (VDSA/VDSB) terminals simplify implementation of carrier-peaking architectures. MD7P19130HR3's characterized series-equivalent impedances at 1960 MHz (Zsource = 7.07 + j0.89 Ω, Zload = 1.55 − j2.79 Ω) enable precise matching network design for both carrier and peaking paths, ensuring optimal efficiency extension at 6–10 dB output back-off.

What is the recommended gate bias voltage for Class AB operation of MD7P19130HR3?

The recommended gate quiescent voltage for Class AB operation of MD7P19130HR3 is 1.9–3.4 Vdc at VDD = 28 V and IDQ = 1250 mA, with a typical value of 2.7 Vdc. This bias point is verified in functional testing and ensures stable transconductance, low IMD, and optimal ACPR performance under W-CDMA modulation. MD7P19130HR3's gate threshold voltage range (1.2–2.7 V) provides margin for process variation while maintaining consistent IDQ across temperature (−30°C to +85°C).

Is MD7P19130HR3 RoHS compliant and lead-free?

Yes, MD7P19130HR3 is RoHS compliant and manufactured with lead-free terminations and halogen-free molding compounds per EU Directive 2011/65/EU. The "R3" suffix confirms tape-and-reel packaging with RoHS-conforming materials. Freescale's documentation (Rev. 2, August 2010) explicitly states RoHS compliance, and the device meets JEDEC J-STD-609A Class 1 marking requirements for lead-free identification. MD7P19130HR3 is suitable for environmentally regulated telecom equipment markets worldwide.