Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors MD7P19130HR5

Part No.:
MD7P19130HR5
Manufacturer:
NXP Semiconductors
Category:
Single FETs, MOSFETs
Package:
NI-780-4
Datasheet:
AetrixMD7P19130HR5.pdf
Description:
RF MOSFET LDMOS 28V NI780
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,091

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MD7P19130HR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency, high-linearity W-CDMA and CDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 40 W average output power at 28 V, achieves 20 dB power gain and –36 dBc ACPR at ±5 MHz offset under single-carrier W-CDMA conditions, and supports Class AB/C operation in multicarrier amplifier systems.

For engineers reviewing the MD7P19130HR5 datasheet, MD7P19130HR5 pinout, MD7P19130HR5 application, or MD7P19130HR5 equivalent, key selection criteria include guaranteed 130 W CW P1dB, 10:1 VSWR ruggedness at 32 V, integrated ESD protection per JESD22-A114 Class 1C, thermally optimized NI-780S-4 package, and series-equivalent large-signal impedance data for matching network design.

Technical Context

This device operates as a single-ended RF power transistor with internally matched input and output networks, enabling direct integration into 50 Ω test fixtures without external matching components. Its lateral LDMOS structure supports stable operation up to 225 °C junction temperature and features a gate threshold voltage of 1.2–2.7 Vdc and drain-source on-resistance of 0.1–0.3 Vdc at 3.16 A.

The MD7P19130HR5 is characterized using series-equivalent large-signal impedance parameters (e.g., Zsource = 7.07 + j0.89 Ω, Zload = 1.55 – j2.79 Ω at 1960 MHz), enabling precise broadband matching across its 60 MHz operating bandwidth. It exhibits 0.3 dB gain flatness and <0.5° average phase deviation at 130 W CW output, supporting Doherty and quadrature-combined topologies.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency Range1930–1990 MHz - Full specification coverage for PCS/PCN cellular and WLL infrastructure bands.
Pout (W-CDMA Avg.)40 W @ 28 V, 1250 mA IDQ - Sustained linear output for single-carrier W-CDMA with 7.5 dB PAR input.
P1dB (CW)130 W - Enables headroom for peak envelope power handling in multicarrier systems.
Power Gain20 dB typ. - Reduces driver stage complexity and improves system-level efficiency.
Drain Efficiency30% typ. - Minimizes thermal load and heatsink requirements in high-power macro base stations.
VSWR Ruggedness10:1 @ 32 V, 1960 MHz - Ensures survivability under antenna mismatch or fault conditions without derating.
Thermal Resistance0.31 °C/W (junction-to-case) - Supports high-power continuous operation with standard heatsinking.
ESD RatingJESD22-A114 Class 1C - Protects against human-body discharge during assembly and field service.

Pinout & Package

MD7P19130HR5 is housed in the NI-780S-4 (Case 465H-02, Style 1) ceramic/metal flanged package with four leads and integral source grounding via the metal tab. The package provides low-inductance RF paths and high thermal conductivity for base station amplifier modules.

Pin/TerminalCircuit RoleDesign Meaning
1 (RFoutA/VDSA)Primary Drain OutputMain RF power output terminal; connects to output matching network and antenna feed.
2 (RFinB/VGSB)Secondary Gate InputSecond gate terminal for balanced or push-pull configurations; tied to Pin 3 in single-ended use.
3 (RFinA/VGSA)Primary Gate InputMain RF input terminal; requires DC blocking and bias feed network for Class AB/C operation.
4 (RFoutB/VDSB)Secondary Drain OutputAlternate drain terminal for parallel/dual-device configurations; tied to Pin 1 in single-ended use.

Key Features

FeatureDesign Value
100% PAR-tested output capabilityGuarantees 40 W avg. W-CDMA performance across production lot - eliminates post-test screening for linearity-critical base station applications.
Internally matched I/OReduces external component count by eliminating discrete input/output matching networks - accelerates RF layout and improves repeatability.
Integrated ESD protectionEnables robust handling during PCB assembly and field maintenance without additional transient suppression circuitry.
Extended negative VGS rangeSupports deep Class C biasing for higher efficiency in pulsed or envelope-tracking architectures without gate breakdown risk.
Rugged 10:1 VSWR toleranceEliminates need for circulators or isolators in macrocell deployments - reduces BOM cost and insertion loss.

Applications

CDMA Base Station Final StageW-CDMA Macrocell Amplifier

Use Scenario: High-power final-stage amplification in 1930–1990 MHz CDMA base station transceivers requiring >40 W average output and spectral purity compliance.

IC Role / Device Role / Timing Role: RF power transistor operating in Class AB mode, delivering amplified RF signal to antenna interface with minimal distortion.

Use Value: Delivers –36 dBc ACPR at ±5 MHz offset and 6 dB PAR handling - meets 3GPP TS 25.104 spectral mask requirements without digital predistortion overhead.

Use Scenario: Linear amplification in outdoor macrocell sites serving multiple users simultaneously under varying traffic loads and signal conditions.

IC Role / Device Role / Timing Role: Primary power device in Doherty or quadrature-combined amplifier architecture, providing high-efficiency wideband output.

Use Value: Achieves 30% drain efficiency at 40 W avg. while maintaining 20 dB gain flatness over 60 MHz - extends operational uptime and reduces cooling demands.

Multicarrier Cellular AmplifierFixed Wireless Access (WLL)

Use Scenario: Amplification of aggregated carriers in PCN/PCS spectrum for distributed antenna systems and small-cell aggregation hubs.

IC Role / Device Role / Timing Role: High-PAR-capable RF power stage handling dynamic composite signals with peak-to-average ratios up to 7.5 dB.

Use Value: Rated for 130 W CW P1dB and tested to 10:1 VSWR - accommodates signal crest factor variations and antenna detuning without failure.

Use Scenario: Point-to-multipoint wireless local loop transmitters operating in licensed 1.9 GHz bands for last-mile broadband access.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier driving sector antennas with high reliability under continuous outdoor environmental stress.

Use Value: Junction temperature rating of 225 °C and MTTF >10⁶ hours at 210 °C - ensures multi-year field deployment in uncooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MD7P19130HSR3Different package: NI-780-4 (Case 465M-01); slightly higher RθJC (0.36 °C/W vs. 0.31 °C/W).Same electrical specs but lower thermal performance - suitable where board-level heatsinking compensates for reduced case conduction.Select MD7P19130HSR3 only when mechanical footprint compatibility with legacy NI-780-4 layouts is required.
AFM905SHigher frequency range (1805–1880 MHz); lower P1dB (100 W CW); different Zsource/Zload impedances.Optimized for GSM/EDGE rather than W-CDMA - not interchangeable without full re-matching and validation.Consider AFM905S only for 1.8 GHz band deployments where MD7P19130HR5's 1930–1990 MHz range is unused.

Compared with MD7P19130HSR3, the MD7P19130HR5 offers superior thermal resistance for sustained high-power operation; compared with AFM905S, it delivers higher output power and better linearity specifically within the 1930–1990 MHz W-CDMA band, making it the optimal choice for PCS macrocell upgrades.

Availability

MD7P19130HR5 is available at Aetrix Electronics and suitable for CDMA base station final stages, W-CDMA macrocell amplifiers, and fixed wireless access (WLL) transmitters requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MD7P19130HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in silicon-based RF power transistors for wireless infrastructure, broadcast, and industrial heating.

The MD7P19130HR5 belongs to NXP's MD7P family of laterally diffused MOSFETs, engineered specifically for high-efficiency, high-linearity 3G/4G base station amplifiers operating in the 1.8–2.2 GHz bands.

FAQ

What is the maximum continuous drain current rating for MD7P19130HR5?

The MD7P19130HR5 does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Instead, its safe operating area is defined by junction temperature limits (225 °C max), case temperature (150 °C max), and thermal resistance (0.31 °C/W). Under typical 28 V, 40 W avg. W-CDMA operation, quiescent drain current IDQ is 1250 mA - this value is validated in functional testing and reflects steady-state bias conditions for linear amplification. MD7P19130HR5 must be used with appropriate heatsinking to maintain TC ≤ 150 °C.

Does MD7P19130HR5 require external matching networks for 50 Ω systems?

No, MD7P19130HR5 is internally matched for ease of use in 50 Ω systems. Its input and output impedances are pre-characterized (e.g., Zsource = 7.07 + j0.89 Ω, Zload = 1.55 – j2.79 Ω at 1960 MHz), and Freescale's reference test circuit demonstrates direct integration without discrete matching components. However, for optimal broadband performance or specific PA topology implementation (e.g., Doherty), fine-tuning with microstrip stubs or lumped elements may be applied - the internal matching reduces design risk but does not eliminate all layout-dependent tuning.

What is the gate threshold voltage range for MD7P19130HR5?

The gate threshold voltage (VGS(th)) for MD7P19130HR5 is specified as 1.2–2.7 Vdc, measured at VDS = 10 Vdc and ID = 316 μAdc. This range reflects process variation across production lots and ensures reliable turn-on behavior across temperature (–30°C to +85°C) and voltage tolerances. In actual operation at 28 V drain supply and 1250 mA quiescent current, the gate quiescent voltage VGS(Q) is 1.9–3.4 Vdc - a critical parameter for setting stable Class AB bias points in base station amplifier designs using MD7P19130HR5.

Can MD7P19130HR5 be used in Class C amplifier configurations?

Yes, MD7P19130HR5 supports Class C operation due to its extended negative gate-source voltage range (VGS = –6.0 to +10 Vdc) and rugged lateral LDMOS structure. The datasheet explicitly states "Greater Negative Gate–Source Voltage Range for Improved Class C Operation" as a key feature. When biased deeply into cutoff, MD7P19130HR5 maintains stability and efficiency - however, harmonic filtering and output network design must account for increased harmonic content, and thermal management remains critical due to higher peak currents. MD7P19130HR5's 10:1 VSWR tolerance further enhances reliability in nonlinear switching-mode applications.

Is MD7P19130HR5 RoHS compliant and lead-free?

Yes, MD7P19130HR5 is RoHS compliant and lead-free. The datasheet explicitly lists "RoHS Compliant" among its features and specifies packaging in tape-and-reel format (R3 suffix = 250 units per 56 mm, 13 inch reel). The NI-780S-4 package uses lead-free solderable terminations and conforms to Directive 2011/65/EU. No exemptions are cited, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly processes.

MD7P19130HR5 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
NI-780-4
Packaging:
Tube
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
Dual
Frequency:
1.99GHz
Gain:
20dB
Voltage - Test:
28 V
Current Rating (Amps):
-
Noise Figure:
-
Current - Test:
1.25 A
Power - Output:
40W
Voltage - Rated:
65 V
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
NI-780-4

MD7P19130HR5 FAQ

1.How can I place an order for MD7P19130HR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MD7P19130HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MD7P19130HR5 reliable?

The price and inventory of MD7P19130HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MD7P19130HR5 is usually 5 days.

3.What payment methods are accepted for MD7P19130HR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MD7P19130HR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MD7P19130HR5?

MD7P19130HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MD7P19130HR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MD7P19130HR5?

For technical support, including MD7P19130HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MD7P19130HR5 requirements.

6.How does Aetrix verify that MD7P19130HR5 is sourced from the original manufacturer or authorized distributors?

All MD7P19130HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MD7P19130HR5 meets industry standards.

7.What is the process for return or replacement of MD7P19130HR5?

All MD7P19130HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MD7P19130HR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MD7P19130HR5 part is unused and in its original packaging.

Return procedure for MD7P19130HR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MD7P19130HR5 Tags

  • MD7P19130HR5
  • MD7P19130HR5 PDF
  • MD7P19130HR5 Datasheet
  • MD7P19130HR5 Specifications
  • MD7P19130HR5 Images
  • NXP Semiconductors
  • NXP Semiconductors MD7P19130HR5
  • Buy MD7P19130HR5
  • MD7P19130HR5 Price
  • MD7P19130HR5 Distributor
  • MD7P19130HR5 Supplier
  • MD7P19130HR5 Wholesale
Related Products
3SK294(TE85L,F)
3SK294(TE85L,F)

Toshiba Semiconductor and Storage

SAV-551+
SAV-551+

Mini-Circuits

TAV2-501+
TAV2-501+

Mini-Circuits

CE3514M4-C2
CE3514M4-C2

CEL

AFT05MS004NT1
AFT05MS004NT1

NXP USA Inc.

SAV-541+
SAV-541+

Mini-Circuits

CE3512K2-C1
CE3512K2-C1

CEL

AFM907NT1
AFM907NT1

NXP Semiconductors

SKY65050-372LF
SKY65050-372LF

Skyworks Solutions Inc.

CE3520K3-C1
CE3520K3-C1

CEL

AFT09MS007NT1
AFT09MS007NT1

NXP USA Inc.

AFT09MS015NT1
AFT09MS015NT1

NXP USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER