NXP Semiconductors MD7P19130HSR3

Overview

MD7P19130HSR3 from Freescale Semiconductor is a laterally diffused N-channel RF power MOSFET designed for CDMA and W-CDMA base station amplifier stages operating at 1930–1990 MHz. It delivers 40 W average output power at 28 V with 20 dB power gain and –36 dBc ACPR at ±5 MHz offset under single-carrier W-CDMA conditions, supporting Class AB/C operation in multicarrier cellular infrastructure.

For engineers reviewing the MD7P19130HSR3 datasheet, MD7P19130HSR3 pinout, MD7P19130HSR3 application, or MD7P19130HSR3 equivalent, this device requires attention to gate bias stability, thermal resistance (0.36 °C/W at 40 W), VSWR ruggedness (10:1 at 130 W CW), and integrated ESD protection per JESD22-A114 Class 1C.

Technical Context

This RF power transistor uses an internally matched lateral MOSFET structure optimized for broadband 1930–1990 MHz operation in base station final amplifiers. Its series-equivalent large-signal impedance parameters (e.g., Z_source = 7.07 + j0.89 Ω, Z_load = 1.55 – j2.79 Ω at 1960 MHz) are characterized for direct integration into 50 Ω systems without external matching networks.

The device supports high-efficiency Class C operation via extended negative gate-source voltage range (–6.0 V), features guaranteed 100% PAR testing for output power capability, and maintains stable gain flatness (0.3 dB over 60 MHz) and phase linearity (0.5° average deviation) at full output.

Key Specifications

Pinout & Package

MD7P19130HSR3 is housed in the NI-780-4 package (Case 465M-01, Style 1), a thermally enhanced ceramic/metal flanged package with four leads and integral source grounding via the metal tab. The package provides low-inductance RF paths and direct thermal conduction to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MD7P19130HR3, the MD7P19130HSR3 trades 0.05 °C/W higher thermal resistance for a smaller NI-780-4 package footprint, while AFM905S provides superior ACPR at the cost of reduced gate voltage margin and no 100% PAR screening.

Availability

MD7P19130HSR3 is available at Aetrix Electronics and suitable for CDMA base station PA modules, W-CDMA macrocell amplifiers, and multicarrier cellular infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for MD7P19130HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, specializing in LDMOS and GaN technologies for cellular base stations.

The MD7P19130HSR3 belongs to Freescale's MD7P family of laterally diffused MOSFETs engineered specifically for high-linearity, high-efficiency 3G/4G macrocell and microcell power amplifiers operating in the 1.9 GHz band.

FAQ

What is the maximum continuous drain current rating for MD7P19130HSR3?

The MD7P19130HSR3 does not specify a maximum continuous drain current (I_D) rating directly; instead, its safe operating area is defined by maximum junction temperature (225 °C), case temperature limit (150 °C), and thermal resistance (0.36 °C/W). Under typical 40 W avg. W-CDMA operation at 28 V, quiescent drain current is 1250 mA - a design point validated for reliability and thermal stability in production base station amplifiers.

Does MD7P19130HSR3 require external gate resistors for stability?

No, MD7P19130HSR3 is internally matched and characterized with stable operation in 50 Ω systems without external gate stabilization resistors. However, Freescale's reference test circuit (Figure 2) includes ferrite bead B1 on the gate bias line to suppress VHF/UHF oscillations - a recommended practice for production layouts to ensure unconditional stability across temperature and process variation.

Can MD7P19130HSR3 be used in Doherty amplifier configurations?

Yes, MD7P19130HSR3 is explicitly supported for Doherty topologies as shown in Figure 4 of the datasheet. Its dual-gate/dual-drain structure (pins 1/4 and 2/3) allows independent drive and biasing of main and peaking paths, and its characterized series-equivalent impedances enable accurate load-pull design of both amplifier branches at 1960 MHz.

What is the gate threshold voltage range for MD7P19130HSR3?

The gate threshold voltage (V_GS(th)) for MD7P19130HSR3 is specified from 1.2 V to 2.7 V at V_DS = 10 V and I_D = 316 μA. This wide range reflects process variation and ensures compatibility with standard 2.7 V gate bias supplies while allowing fine-tuning of Class AB quiescent current (V_GS(Q) = 1.9–3.4 V at I_DQ = 1250 mA).

Is MD7P19130HSR3 lead-free and RoHS compliant?

Yes, MD7P19130HSR3 is RoHS compliant per the datasheet revision 2 (August 2010), meeting EU Directive 2011/65/EU requirements. The device uses lead-free terminations and packaging materials, and is supplied in tape-and-reel format (R3 suffix = 250 units per 56 mm, 13-inch reel) with appropriate moisture sensitivity level (MSL) labeling.