NXP Semiconductors MD7P19130HSR5

Overview

MD7P19130HSR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency, high-linearity W-CDMA and CDMA base station amplifier stages operating at 1930–1990 MHz. It delivers 40 W average output power at 28 V with 20 dB power gain and –36 dBc ACPR at ±5 MHz offset under single-carrier W-CDMA conditions (3.84 MHz BW, 7.5 dB PAR), targeting macrocell and microcell infrastructure.

For engineers reviewing the MD7P19130HSR5 datasheet, MD7P19130HSR5 pinout, MD7P19130HSR5 application, or MD7P19130HSR5 equivalent, key selection criteria include guaranteed 130 W CW P1dB, 10:1 VSWR ruggedness at 32 V, integrated ESD protection (HBM Class 1C), thermally optimized NI-780-4 package, and validated performance across –30°C to +85°C ambient.

Technical Context

This device operates in Class AB or Class C configurations for PCN/PCS cellular, WLL, and multicarrier amplifier applications. Its internally matched input and output enable simplified broadband matching over 60 MHz bandwidth, with measured gain flatness of 0.3 dB and phase deviation of only 0.5° at 130 W CW output.

The lateral MOSFET architecture supports stable operation under high VSWR stress (10:1 at 1960 MHz, 32 V, 130 W CW), enabled by robust gate-source voltage range (–6.0 V to +10 V) and junction temperature rating up to 225°C. Thermal resistance is 0.36°C/W at 40 W CW (case temp = 75°C).

Key Specifications

Pinout & Package

MD7P19130HSR5 is housed in the NI-780-4 surface-mount ceramic/metal package (Case 465M-01, Style 1), featuring a thermally enhanced copper base and gold-plated leads for high-power RF reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplification applications.

Compared with MD7P19130HSR5, MD7P19130HR3 shares identical electrical specs but requires PCB rework due to different case dimensions, while AFM905S trades 40 W output headroom for improved gain flatness and reduced thermal mass-making it suitable for space-constrained driver stages rather than final PA stages.

Availability

MD7P19130HSR5 is available at Aetrix Electronics and suitable for macrocell base station transmitters, microcell small cell amplifiers, and WLL point-to-multipoint hubs requiring stable component supply, long-term lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MD7P19130HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, with deep heritage in cellular infrastructure semiconductor design dating back to its Freescale RF division.

The MD7P19130HSR5 belongs to NXP's MD7P family of LDMOS RF power transistors, engineered specifically for high-efficiency, high-linearity 3G/4G base station amplifiers operating in the 1800–2200 MHz bands.

FAQ

What is the maximum continuous drain current rating for MD7P19130HSR5?

The MD7P19130HSR5 does not specify a maximum continuous drain current (I_D) rating; instead, its safe operating area is defined by maximum junction temperature (225°C), thermal resistance (0.36°C/W), and voltage limits. At 28 V and 40 W average output, typical quiescent drain current is 1250 mA. The device is characterized for pulsed CW operation up to 185 W P1dB (52.67 dBm), confirming robust transient current handling capability under real-world W-CDMA signal conditions.

Does MD7P19130HSR5 require external gate protection diodes?

No, MD7P19130HSR5 incorporates integrated ESD protection meeting HBM Class 1C (≥1 kV), MM Class A, and CDM Class IV standards per JESD22-A114/A115/C101. This eliminates the need for external gate protection components in standard PCB layouts, provided proper grounding and decoupling per Freescale AN1955 are implemented. The internal protection is validated across full temperature range (–65°C to +150°C storage).

What is the meaning of the 'R5' suffix in MD7P19130HSR5?

The 'R5' suffix in MD7P19130HSR5 indicates tape-and-reel packaging with 500 units per reel, consistent with NXP's standard ordering convention for NI-780-4 devices. This differs from the 'R3' variant (250 units/reel) and reflects optimized logistics for medium-volume production runs. The R5 packaging uses 56 mm tape width and 13-inch reels, compatible with standard SMT pick-and-place equipment.

Can MD7P19130HSR5 be used in Doherty amplifier configurations?

Yes, MD7P19130HSR5 is explicitly validated for Doherty operation, as shown in Figure 4 of the datasheet. Its dual-gate (RFinA/RFinB) and dual-drain (RFoutA/RFoutB) terminals support independent biasing and signal routing for carrier and peaking paths. The device's symmetric large-signal impedance characteristics (Z_source, Z_load) across 1880–2040 MHz enable precise load modulation and high efficiency extension beyond back-off regions.

What thermal interface material is recommended for MD7P19130HSR5 mounting?

NXP recommends using a thermally conductive, electrically insulating interface material with ≤0.25°C·in²/W thermal resistance (e.g., Bergquist Sil-Pad 1000ST or Parker Chomerics Thermasil III) between the MD7P19130HSR5 copper base and heatsink. Mounting pressure must be uniform (60–90 psi) and torque controlled (8–12 in-lb per screw) to avoid die cracking. Thermal performance validation per AN1955 confirms 0.36°C/W R_θJC at 75°C case temperature with proper interface implementation.