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Vishay General Semiconductor - Diodes Division MF10H100HE3_B/P
- Part No.:
- MF10H100HE3_B/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
MF10H100HE3_B/P.pdf
- Description:
- DIODE SCHOTTKY 100V 10A TO220AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,138
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Product details
Overview
MF10H100HE3_B/P from Vishay General Semiconductor is a high-voltage Schottky rectifier in D2PAK (TO-263AB) package, rated for 100 V repetitive peak reverse voltage, 10 A average forward current, and 250 A surge capability. It features low forward voltage drop (0.64 V at 10 A, 125 °C), 4.5 μA reverse leakage at 25 °C, and AEC-Q101 qualification for automotive-grade reliability in DC/DC converters.
For engineers reviewing the MF10H100HE3_B/P datasheet, MF10H100HE3_B/P pinout, MF10H100HE3_B/P application, or MF10H100HE3_B/P equivalent, key selection criteria include thermal resistance (2.7 °C/W), high-frequency operation suitability, guardring-enabled overvoltage protection, and compatibility with lead-free reflow profiles up to 245 °C per J-STD-020 MSL Level 1.
Technical Context
This device uses high-barrier Schottky technology to achieve improved high-temperature performance and reduced reverse leakage versus conventional Schottkys. Its single-diode configuration and D2PAK thermal design support high-power-density switching applications where junction temperature must remain below 175 °C under sustained 10 A load.
The guardring structure enhances ruggedness against transient overvoltage events, while the matte tin-plated terminals ensure solderability per J-STD-002 and whisker resistance per JESD 201 Class 2. It operates across -65 °C to +175 °C junction temperature range and meets UL 94 V-0 flammability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports input stages of 48 V and 60 V industrial DC/DC systems with margin against transients |
| IF(AV) | 10 A - enables continuous conduction mode operation in mid-power SMPS without forced cooling |
| IFSM | 250 A - withstands inrush and short-circuit surge events in automotive power modules |
| VF | 0.64 V @ 10 A, 125 °C - reduces conduction loss by ~30 % vs. standard silicon diodes at same current |
| RθJC | 2.7 °C/W - allows >7 W dissipation with 20 °C heatsink-to-case ΔT, supporting compact thermal layout |
| IR | 4.5 μA @ 100 V, 25 °C - minimizes standby power loss in always-on automotive subsystems |
| TJ max. | 175 °C - enables operation in engine bay or under-hood environments without derating |
Pinout & Package
Package: D2PAK (TO-263AB) surface-mount package with exposed metal tab (pin 3) serving as cathode and thermal interface. Molded compound meets UL 94 V-0; leads are matte tin-plated for reliable solder joint formation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward current flow; connects to switching node in buck or flyback topologies |
| Pin 2 | Cathode | Output terminal; electrically and thermally tied to exposed heatsink pad (Pin 3) |
| Heatsink Pad (Pin 3) | Cathode / Thermal Path | Primary thermal interface to PCB copper pour; must be soldered for rated RθJC and current handling |
Key Features
| Feature | Design Value |
|---|---|
| High-barrier Schottky architecture | Enables stable 175 °C operation with <6 mA IR at 125 °C - critical for under-hood automotive designs |
| Integrated guardring | Prevents edge breakdown during dV/dt transients up to 10,000 V/μs - improves system EMI immunity |
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics per stress test requirements including HTGB, HTRB, and TCT |
| MSL Level 1 rating | Allows unlimited floor life and single-reflow processing at 245 °C peak - simplifies SMT manufacturing |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and JEDEC J-STD-609A Class 1 - supports global environmental compliance programs |
Applications
| Automotive DC/DC Converters | Industrial SMPS Outputs |
|---|---|
Use Scenario: 12 V–48 V bidirectional DC/DC converter in 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectification stage, conducting during low-side FET off-time. Use Value: 0.64 V VF at 125 °C reduces conduction loss by 1.8 W vs. Si diode alternative, lowering thermal load on converter module. | Use Scenario: Output rectification in 3 kW telecom rectifier with 92 % efficiency target. IC Role / Device Role / Timing Role: High-frequency output diode in phase-shifted full-bridge topology operating at 100 kHz. Use Value: Low junction capacitance (<100 pF) and fast recovery minimize switching loss and EMI generation at high frequency. |
| Polarity Protection Circuits | Renewable Energy Inverters |
Use Scenario: Reverse-polarity protection at battery input of industrial IoT gateway with wide ambient range (-40 °C to +85 °C). IC Role / Device Role / Timing Role: Series-blocking diode preventing damage from incorrect battery connection. Use Value: 4.5 μA reverse leakage at 25 °C and <6 mA at 125 °C ensures <10 μW standby loss - extends battery life in remote deployments. | Use Scenario: Freewheeling path in MPPT charge controller for solar micro-inverters operating at 65 °C ambient. IC Role / Device Role / Timing Role: Clamping diode across MOSFETs to absorb inductive energy during turn-off. Use Value: 250 A IFSM rating handles surge currents from PV panel transients without degradation over 20-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay MBR10100CT | Dual common-cathode configuration; 1.25 V VF @ 10 A, 25 °C; TO-220AC package; no AEC-Q101 qualification | Requires dual-output or parallel-path designs; lacks automotive qualification and MSL Level 1 reflow support | Select when dual-diode topology is needed and automotive qualification is not required |
| ON Semiconductor SB10100 | 100 V, 10 A; VF = 0.75 V @ 10 A, 25 °C; D2PAK package; AEC-Q101 qualified but RθJC = 3.5 °C/W | Higher thermal resistance limits power density; lower surge rating (200 A vs. 250 A) | Select when footprint compatibility is critical but thermal margin is available |
Compared with MBR10100CT and SB10100, the MF10H100HE3_B/P delivers superior thermal performance (2.7 °C/W), higher surge robustness (250 A), and guaranteed AEC-Q101 compliance - making it the preferred choice for space-constrained, high-reliability automotive and industrial power stages.
Availability
MF10H100HE3_B/P is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial SMPS outputs, and polarity protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for MF10H100HE3_B/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.
The MF10H100HE3_B/P belongs to Vishay's high-voltage Schottky rectifier product line, engineered specifically for automotive and industrial power conversion where low VF, high TJ max., and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum junction temperature rating for MF10H100HE3_B/P?
The MF10H100HE3_B/P has a maximum junction temperature rating of +175 °C, validated per AEC-Q101 stress testing. This allows uninterrupted operation in under-hood automotive environments and high-ambient industrial settings without thermal derating below 10 A average current when mounted on an adequately sized heatsink. The device's thermal resistance (RθJC = 2.7 °C/W) supports this rating under real-world PCB thermal conditions.
Is MF10H100HE3_B/P compatible with lead-free reflow soldering processes?
Yes, MF10H100HE3_B/P is rated for MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 245 °C. Its matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards, and the package passes JESD 201 Class 2 whisker testing. No dry-pack or baking is required prior to assembly, simplifying manufacturing flow for MF10H100HE3_B/P.
Does MF10H100HE3_B/P have AEC-Q101 qualification?
Yes, MF10H100HE3_B/P is fully AEC-Q101 qualified. The qualification includes HTGB (high-temperature gate bias), HTRB (high-temperature reverse bias), and temperature cycling tests across the full -65 °C to +175 °C range. This certification confirms its suitability for automotive powertrain, body electronics, and ADAS subsystems where long-term reliability under harsh conditions is essential for MF10H100HE3_B/P.
What is the reverse leakage current specification for MF10H100HE3_B/P at elevated temperature?
At 100 V reverse voltage and 125 °C junction temperature, MF10H100HE3_B/P exhibits a maximum reverse leakage current of 6.0 mA. This value is confirmed in the Vishay datasheet and reflects the device's high-barrier Schottky design, which maintains low leakage even at high temperatures - a key advantage over standard Schottky diodes that typically exceed 20 mA under identical conditions.
How does the guardring feature improve reliability in MF10H100HE3_B/P?
The integrated guardring in MF10H100HE3_B/P prevents premature edge breakdown during high dV/dt transients (rated up to 10,000 V/μs). This structural enhancement increases voltage standoff margin and improves ruggedness against ESD and switching-induced overshoot - directly contributing to longer field life in noisy automotive and industrial power systems where MF10H100HE3_B/P is deployed.
MF10H100HE3_B/P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 880 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 4.5 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC
- Operating Temperature - Junction:
- -65°C ~ 175°C
MF10H100HE3_B/P FAQ
1.How can I place an order for MF10H100HE3_B/P through Aetrix?
Please submit a Request for Quotation (RFQ) for MF10H100HE3_B/P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MF10H100HE3_B/P reliable?
The price and inventory of MF10H100HE3_B/P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MF10H100HE3_B/P is usually 5 days.
3.What payment methods are accepted for MF10H100HE3_B/P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MF10H100HE3_B/P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MF10H100HE3_B/P?
MF10H100HE3_B/P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MF10H100HE3_B/P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MF10H100HE3_B/P?
For technical support, including MF10H100HE3_B/P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MF10H100HE3_B/P requirements.
6.How does Aetrix verify that MF10H100HE3_B/P is sourced from the original manufacturer or authorized distributors?
All MF10H100HE3_B/P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MF10H100HE3_B/P meets industry standards.
7.What is the process for return or replacement of MF10H100HE3_B/P?
All MF10H100HE3_B/P units undergo pre-shipment inspection (PSI). If there is an issue with MF10H100HE3_B/P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MF10H100HE3_B/P part is unused and in its original packaging.
Return procedure for MF10H100HE3_B/P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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