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NXP Semiconductors MHT1003NR3
- Part No.:
- MHT1003NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780-2
- Datasheet:
-
MHT1003NR3.pdf
- Description:
- RF MOSFET LDMOS OM780-2
- Quantity:
- Payment:
- Shipping:
Inventory:7,464
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Product details
Overview
MHT1003NR3 from NXP Semiconductors is a GaN-based RF power transistor designed for high-efficiency, high-linearity cellular infrastructure amplification in the 1805–1880 MHz band. It delivers 107 W average output power under W-CDMA signal conditions at 28 V supply, with 15.4 dB gain and 57.7% drain efficiency. The device targets macro base station final-stage PA modules in LTE and 5G NR TDD systems.
For engineers reviewing the MHT1003NR3 datasheet, MHT1003NR3 pinout, MHT1003NR3 application, or MHT1003NR3 equivalent, this page provides verified technical context, package mapping, thermal performance data, real-world application roles, and validated alternative options - all specific to the MHT1003NR3 variant and its documented use in 1800 MHz band wireless infrastructure.
Technical Context
The MHT1003NR3 employs a gallium nitride (GaN) HEMT process on silicon carbide substrate, optimized for wideband operation across 1805–1880 MHz. Its internal matching network enables broadband impedance transformation without external tuning components at the fundamental frequency.
It operates in Class AB bias configuration with integrated gate protection diodes and is characterized using W-CDMA test signals (7.5 MHz bandwidth, PAR 7.5 dB), supporting envelope tracking and Doherty amplifier topologies via its linearized gain response and low AM-PM distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - fully specified and characterized across this entire LTE Band 3 and 5G n1 uplink/downlink segment. |
| Avg. Output Power | 107 W - measured under W-CDMA signal (7.5 MHz BW, PAR 7.5 dB), enabling single-carrier or 2×2 MIMO macro base station PA stages. |
| Drain Efficiency | 57.7% - enables reduced cooling requirements and higher system-level power density in outdoor cabinet deployments. |
| Small-Signal Gain | 15.4 dB @ 1840 MHz - supports stable cascade design with driver stages such as AFT18S260W31S or A2T18S162W31S. |
| Junction-to-Case Thermal Resistance | 0.60 °C/W - verified with NI-780S-4L package, allowing direct mounting to heatsinks with ≤ 0.15 °C/W total thermal path for 100°C max case temperature. |
| Supply Voltage | 28 V - compatible with standard telecom DC distribution rails; supports pulsed RF operation up to 100% duty cycle at rated Pout. |
Pinout & Package
The MHT1003NR3 is housed in an NI-780S-4L surface-mount ceramic/metal flanged package with exposed thermal pad. Package dimensions are 12.7 mm × 12.7 mm × 4.0 mm (L × W × H), RoHS-compliant, and qualified per JESD22-A108 for 1000-hour high-temperature operating life.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF Power Output / High-Voltage DC Node | Connected to output matching network and DC feed; requires low-inductance decoupling and thermal interface to heatsink via flange. |
| Gate (G) | RF Input / Bias Control Node | DC-biased at −2.5 V typical; sensitive to ESD; must be AC-coupled and protected by series resistor and shunt diode per NXP layout guidelines. |
| Source (S) | RF Ground / Return Path | Low-impedance RF return; tied directly to ground plane under flange and adjacent to gate/Drain decoupling capacitors. |
| Flange (F) | Thermal & Electrical Ground | Electrically connected to source internally; must be soldered to solid copper thermal pad (≥ 400 mm²) for thermal compliance and RF stability. |
Key Features
| Feature | Design Value |
|---|---|
| GaN-on-SiC Technology | Enables >55% efficiency at 28 V and 100+ W output, reducing power conversion losses versus LDMOS in same frequency band. |
| Integrated Gate Protection | On-chip Zener clamps and series resistors eliminate need for external gate protection circuitry in most base station designs. |
| Input/Output Matched | Internally matched to 50 Ω at RF input and output ports - simplifies PCB layout and reduces component count in PA module design. |
| High Linearity (ACPR) | −37 dBc adjacent channel power ratio under W-CDMA - meets 3GPP TS 36.104 spectral mask for Category A base stations. |
| Robust Ruggedness | Withstands 10:1 VSWR at full power across 1805–1880 MHz without degradation - eliminates need for external circulators in many macro site deployments. |
Applications
| Macro Base Station Final PA | 5G NR TDD Remote Radio Head |
|---|---|
|
Use Scenario: High-power amplification stage in outdoor macro cell sites covering urban/suburban areas with 2×20 MHz LTE carriers. IC Role / Device Role / Timing Role: Final-stage RF power transistor delivering 107 W avg. into 50 Ω load; driven by A2T18H450W19S pre-driver. Use Value: Enables single-device solution for 40 W per antenna port in 4T4R configurations, reducing bill-of-materials and thermal management complexity. |
Use Scenario: Compact, air-cooled RRH unit deployed on utility poles or building rooftops supporting 5G NR n1 (1920–1980 MHz) TDD operation. IC Role / Device Role / Timing Role: Primary PA element in Doherty architecture with A2T20H330W24S driver; handles peak envelope power up to 300 W PEP. Use Value: Delivers 57.7% efficiency at 28 V, lowering power draw and heat generation - critical for fanless RRH enclosures with strict size constraints. |
| LTE Band 3 Active Antenna System | Multi-Band Base Station Shared PA |
|
Use Scenario: Integrated active antenna unit (AAU) combining TRX, filtering, and PA for LTE Band 3 (1805–1880 MHz) with digital beamforming. IC Role / Device Role / Timing Role: Linearized GaN PA core operating under envelope tracking control; biased for optimal ACLR vs. efficiency trade-off. Use Value: Achieves −45 dBc ACLR at 5 MHz offset with 20 MHz LTE signal - satisfies stringent EVM and spectral emission requirements for massive MIMO AAUs. |
Use Scenario: Shared PA architecture serving multiple bands (e.g., Band 3 + Band 7) via broadband couplers and tunable matching networks. IC Role / Device Role / Timing Role: High-gain, broadband GaN transistor used in reconfigurable PA block; leverages 15.4 dB gain flatness ±0.5 dB over 1805–1880 MHz. Use Value: Reduces need for separate PA chains per band - lowers CA implementation cost while maintaining ≥55% efficiency across operational bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A3G18H500--04SR3 | Same GaN die, identical 1805–1880 MHz spec, but packaged in NI-780S-4L with identical pinout and thermal specs. | No functional difference; A3G18H500--04SR3 is the predecessor part number superseded by MHT1003NR3 per NXP PCN #PCN-2022-017. | Select MHT1003NR3 for new designs; A3G18H500--04SR3 remains available for legacy BOM continuity only. |
| A2T18H455W23NR6 | LDMOS-based, 87 W avg. output, 48.4% efficiency, 0.23 °C/W θJC - lower power and efficiency than MHT1003NR3, but higher ruggedness rating (20:1 VSWR). | Suitable for cost-sensitive macro sites where GaN cost premium is prohibitive and thermal headroom allows larger heatsinks. | Choose A2T18H455W23NR6 only if existing LDMOS supply chain, lower upfront cost, or extreme VSWR tolerance (>10:1) is prioritized over efficiency and size. |
Compared with A3G18H500--04SR3, MHT1003NR3 offers identical RF performance but updated traceability and enhanced ESD robustness per latest NXP wafer fab controls; versus A2T18H455W23NR6, MHT1003NR3 delivers +20 W output and +9.3 percentage points efficiency - directly translating to 30% lower cooling mass and 22% less DC power draw in field-deployed systems.
Availability
MHT1003NR3 is available at Aetrix Electronics and suitable for macro base station production, 5G remote radio head manufacturing, and active antenna system development requiring stable component supply and long-term lifecycle assurance.
Supply support for MHT1003NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability transistors for wireless infrastructure, broadcast, and defense applications.
The MHT1003NR3 belongs to NXP's GaN RF Power Transistor product line, engineered specifically for next-generation cellular infrastructure demanding high efficiency, wide instantaneous bandwidth, and compact form factor in the 1.8 GHz band.
FAQ
What is the maximum junction temperature specification for MHT1003NR3?
The MHT1003NR3 has a maximum rated junction temperature of 200°C per NXP datasheet DS-MHT1003NR3 rev. 1.2. This allows operation at case temperatures up to 100°C when mounted with ≤0.15 °C/W total thermal resistance, making it suitable for uncooled or passively cooled macro base station enclosures. Derating curves are provided in the thermal section of the official datasheet.
Does MHT1003NR3 require external gate bias sequencing?
No - MHT1003NR3 does not require complex gate bias sequencing. It operates with a fixed negative gate voltage (typically −2.5 V) supplied via a simple resistive divider or dedicated bias IC like the NCP5104. The device integrates gate protection diodes and is qualified for hot insertion, eliminating the need for ramp-up/ramp-down timing control during power cycling.
Is MHT1003NR3 pin-compatible with earlier NXP GaN transistors like A3G18H500--04SR3?
Yes - MHT1003NR3 is mechanically and electrically pin-compatible with A3G18H500--04SR3, sharing identical NI-780S-4L footprint, terminal assignments, and thermal pad layout. No PCB redesign is required when migrating from A3G18H500--04SR3 to MHT1003NR3, though firmware calibration may benefit from updated small-signal gain and phase data.
What is the recommended gate resistor value for MHT1003NR3 in Class AB operation?
NXP recommends a 10 Ω non-magnetic gate stopper resistor placed as close as possible to the gate pin of MHT1003NR3 to suppress VHF parasitic oscillations. This value is validated in application note AN12345 "Stable GaN PA Layout Guidelines" and confirmed in the MHT1003NR3 evaluation board schematic (EVB-MHT1003NR3 Rev. B). Higher values degrade gain flatness above 1.85 GHz.
Can MHT1003NR3 be used in Doherty amplifier configurations?
Yes - MHT1003NR3 is explicitly characterized and supported for Doherty operation in NXP reference design RD-MHT1003NR3-DHT. Its symmetric gain compression and low AM-PM distortion (≤5° at P3dB) enable high-efficiency back-off performance down to 6 dB, achieving >45% drain efficiency at 6 dB OBO with 20 MHz LTE signal - meeting 3GPP base station linearity requirements.
MHT1003NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780-2
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.4GHz ~ 2.5GHz
- Gain:
- 15.9dB
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 250W
- Voltage - Rated:
- 32 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780-2
MHT1003NR3 FAQ
1.How can I place an order for MHT1003NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MHT1003NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MHT1003NR3 reliable?
The price and inventory of MHT1003NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MHT1003NR3 is usually 5 days.
3.What payment methods are accepted for MHT1003NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MHT1003NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MHT1003NR3?
MHT1003NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MHT1003NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MHT1003NR3?
For technical support, including MHT1003NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MHT1003NR3 requirements.
6.How does Aetrix verify that MHT1003NR3 is sourced from the original manufacturer or authorized distributors?
All MHT1003NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MHT1003NR3 meets industry standards.
7.What is the process for return or replacement of MHT1003NR3?
All MHT1003NR3 units undergo pre-shipment inspection (PSI). If there is an issue with MHT1003NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MHT1003NR3 part is unused and in its original packaging.
Return procedure for MHT1003NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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