Microchip Technology MIC2800-G4MYML-TR

Overview

MIC2800-G4MYML-TR from Microchip Technology is a digital power management IC integrating a 2 MHz, 600 mA synchronous buck DC/DC converter and two independent 300 mA LDOs (LDO1 and LDO2) in a single 16-pin 3 mm × 3 mm QFN package. It delivers three regulated outputs with adjustable POR delay, LOWQ ultra-low-noise light-load mode (75 µVRMS noise, 30 µA total IQ), and thermal/current protection - designed for embedded MPU core and I/O rail sequencing in battery-powered SAMA5D2-based systems.

For engineers reviewing the MIC2800-G4MYML-TR datasheet, MIC2800-G4MYML-TR pinout, MIC2800-G4MYML-TR application, or MIC2800-G4MYML-TR equivalent, key selection criteria include dual-LDO flexibility, LOWQ mode noise performance vs. load transient response, POR delay programmability via CSET, and compatibility with ceramic output capacitors and small inductors (2.2 µH).

Technical Context

The MIC2800-G4MYML-TR implements a fixed-frequency PWM buck regulator (2 MHz ±10%) with internal high-side/low-side MOSFETs and an error amplifier referenced to FB, alongside two independent LDO regulators: LDO1 powered from the DC/DC output (enabling 1.5 V–1.8 V conversion), and LDO2 powered directly from VIN (supporting up to 5.5 V input). The LOWQ pin selects between full-power PWM mode (600 mA DC/DC + 300 mA LDO1 + 300 mA LDO2) and low-noise linear regulation mode (60 mA LDO-only output, 75 µVRMS noise, 20–30 µA IQ).

Its POR circuit performs a logic-OR of all three output voltage statuses (DC/DC, LDO1, LDO2), with programmable turn-on delay (via CSET capacitor) and minimal turn-off delay. The device uses separate SGND and PGND pins, BIAS decoupling (0.1 µF), and ESD-hardened LOWQ/POR pins enabling safe interfacing with backup-power-domain host I/Os without parasitic leakage.

Key Specifications

Pinout & Package

Package: 16-pin, 3 mm × 3 mm, 0.5 mm pitch, leadless QFN with exposed thermal pad (PGND-connected). Requires SGND/PGND separation and thermal via array under pad for reliable operation at full load.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar multi-rail power management applications.

Compared with TPS65023BRSBT and RTQ2134BGQW, the MIC2800-G4MYML-TR uniquely combines dual independent LDOs, programmable POR sequencing, and LOWQ mode's 75 µVRMS noise - making it optimal for space-constrained, battery-powered MPU systems demanding clean, sequenced, and ultra-low-IQ power.

Availability

MIC2800-G4MYML-TR is available at Aetrix Electronics and suitable for embedded MPU power, portable wearable systems, low-power RF systems, and backup power systems requiring stable component supply across industrial temperature range (–40°C to +125°C) and long-term production continuity.

Supply support for MIC2800-G4MYML-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontrollers, analog devices, and power management ICs, headquartered in Chandler, Arizona, with global design and manufacturing operations.

The MIC2800 product line is designed for highly integrated, low-power power management in ARM-based embedded systems - emphasizing rail sequencing, ultra-low-noise operation, and backup-power-domain interoperability.

FAQ

What is the function of the LOWQ pin on the MIC2800-G4MYML-TR?

The LOWQ pin on the MIC2800-G4MYML-TR is an active-low logic input that selects between two operating modes: when pulled high (>1 V), the device operates in full-power 2 MHz PWM mode delivering up to 600 mA from the DC/DC and 300 mA from each LDO; when pulled low (<0.2 V), it enters LOWQ mode, disabling the DC/DC switcher and regulating output solely through the LDO path with 75 µVRMS noise and ≤30 µA total quiescent current. This pin is ESD-hardened and safe for direct connection to backup-power-domain host I/Os.

How is POR delay programmed on the MIC2800-G4MYML-TR?

POR delay on the MIC2800-G4MYML-TR is programmed using an external capacitor connected from the CSET pin (Pin 13) to SGND. The internal 1.25 µA current source charges this capacitor; when the voltage reaches 1.25 V, the POR output is allowed to go high. The delay time in microseconds equals the capacitor value in picofarads - e.g., a 1 nF capacitor yields a 1 ms delay, and a 1 µF capacitor yields a 1 s delay. The POR turn-off delay remains minimal and unprogrammable.

Can the MIC2800-G4MYML-TR power both core and I/O rails of an ARM MPU simultaneously?

Yes, the MIC2800-G4MYML-TR is specifically designed to power both core and I/O rails of ARM MPUs like the SAMA5D2. Its LDO1 output (300 mA, powered by the DC/DC output) delivers the core voltage (e.g., 1.2 V), while its LDO2 output (300 mA, powered directly from VIN) supplies the I/O voltage (e.g., 2.8 V). The DC/DC converter provides the intermediate rail (e.g., 1.8 V) for DDR memory. Independent EN1 and EN2 pins enable precise sequencing - for example, enabling DC/DC and LDO1 first, then LDO2 after a CSET-programmed delay.

What are the minimum external components required for stable operation of the MIC2800-G4MYML-TR?

For stable operation, the MIC2800-G4MYML-TR requires: (1) a 4.7 µF ceramic capacitor between VIN and PGND; (2) a 2.2 µH shielded inductor between SW and the DC/DC output; (3) 2.2 µF ceramic capacitors on LDO1 and LDO2 outputs; (4) a 0.1 µF ceramic capacitor on BIAS to SGND; and (5) a 0.1 µF ceramic capacitor on CBYP to SGND (recommended for noise reduction). The CSET capacitor is optional but required for POR delay programming. No external feedback resistors are needed for fixed-output versions.

Does the MIC2800-G4MYML-TR support operation across the full industrial temperature range?

Yes, the MIC2800-G4MYML-TR is specified for continuous operation from –40°C to +125°C junction temperature. Its electrical characteristics - including output voltage accuracy (±2% typ.), load regulation, PSRR, and current limits - are guaranteed across this full range, as confirmed in Tables 1-1 through 1-4 of the official datasheet (DS20005839B). Thermal shutdown activates at 160°C with 23°C hysteresis to ensure reliability under sustained overload or elevated ambient conditions.