onsemi MJ11029G
- Part No.:
- MJ11029G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AE
- Datasheet:
-
MJ11029G.pdf
- Description:
- TRANS PNP DARL 60V 50A TO204
- Quantity:
- Payment:

- Shipping:

Inventory:350
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Product details
Overview
MJ11029G from onsemi is a PNP high-current Darlington power transistor in TO-204 (TO-3) metal package, rated for 50 A continuous collector current, 60 V VCEO, 300 W power dissipation at TC = 25°C, and junction operation up to +200°C - designed as output stage devices in complementary audio and industrial linear amplifiers.
For engineers reviewing the MJ11029G datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain (hFE ≥ 1000 @ IC = 25 A), built-in base-emitter shunt resistor, diode-protected emitter-base junction, and thermal resistance RθJC = 0.58°C/W for high-power thermal management.
Technical Context
The MJ11029G implements a monolithic Darlington pair with integrated ~3.0 kΩ base-emitter shunt resistor and emitter-base protection diode, enabling simplified biasing and robust overcurrent handling in linear output stages. Its PNP polarity complements NPN counterparts like MJ11028G in push-pull configurations.
Rated for operation up to +200°C junction temperature and validated for pulsed currents to 100 A (5 s, ≤10% duty), it supports thermally demanding applications where second-breakdown margin and bonding-wire current limits are critical design constraints per Figure 2 SOA curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 Vdc - Maximum safe collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in Class-AB amplifier outputs. |
| IC (cont.) | 50 Adc - Continuous collector current rating at TC = 25°C; determines heatsink sizing for sustained linear operation. |
| PD | 300 W - Total power dissipation at case temperature 25°C; derates linearly at 1.71 W/°C above 25°C. |
| hFE | ≥1000 @ IC = 25 A - High DC current gain enables low base drive current, reducing driver stage complexity and losses. |
| RθJC | 0.58°C/W - Junction-to-case thermal resistance; directly determines temperature rise across the metal case interface under load. |
| TJ max | +200°C - Maximum allowable junction temperature; permits operation in high-ambient industrial environments without thermal shutdown. |
Pinout & Package
Package: TO-204 (TO-3), metal case, Pb-free, with collector connected to case. Dimensions per Case 197A-05 (Issue K). Mounting requires insulated washer or shoulder washer when case is not at circuit ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to turn on Darlington pair; internal ~3.0 kΩ shunt resistor provides default off-state bias. |
| 2 (Emitter) | Output reference terminal | Connected to supply rail in common-collector configuration; includes integrated protection diode to VEBO = 5 V. |
| Case (Collector) | Power output terminal | Electrically connected to collector; serves as primary heat path and must be electrically isolated if not referenced to system ground. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington structure | Single-die integration eliminates interconnect parasitics and ensures matched thermal tracking between input/output transistors. |
| Built-in base-emitter shunt resistor | ~3.0 kΩ resistor guarantees turn-off under floating-base conditions, eliminating need for external pull-down in discrete driver circuits. |
| Emitter-base protection diode | Integrated diode clamps reverse VEB to ≤5 V, preventing damage during negative swing or inductive flyback in amplifier outputs. |
| High-temperature junction rating | +200°C maximum operating junction temperature enables use in sealed enclosures or high-ambient industrial settings without derating. |
Applications
| Audio Power Amplifiers | Industrial Motor Drivers |
|---|---|
Use Scenario: High-fidelity Class-AB output stage delivering 50–100 W into 4–8 Ω loads with low distortion and wide bandwidth. IC Role / Device Role / Timing Role: PNP Darlington output transistor paired with MJ11028G (NPN) in complementary symmetry configuration. Use Value: High hFE ≥ 1000 reduces required driver current by >5× versus single bipolar transistors, simplifying pre-driver design. |
Use Scenario: Linear current regulator for precision DC motor control in CNC or packaging equipment requiring smooth torque at low RPM. IC Role / Device Role / Timing Role: Pass element in adjustable linear current source with external sense resistor and op-amp feedback. Use Value: 50 A continuous rating and 0.58°C/W RθJC support stable 30–40 A operation with standard finned heatsinks. |
| DC Power Supplies | Welding Control Circuits |
Use Scenario: Series pass transistor in high-current, low-noise laboratory bench power supplies (0–30 V, 0–50 A). IC Role / Device Role / Timing Role: Main regulation element controlled by error amplifier and current-limit comparator. Use Value: Diode-protected emitter-base junction withstands reverse recovery stress during foldback current limiting. |
Use Scenario: Primary switching element in solid-state welding timer modules controlling electrode current pulses up to 100 A peak. IC Role / Device Role / Timing Role: High-current switch triggered by microcontroller PWM with external snubber network. Use Value: Validated 100 A pulsed capability (5 s, ≤10% duty) meets short-duration arc initiation requirements without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current PNP Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ11033G | Higher VCEO = 120 V, same IC = 50 A and package; hFE min = 400 @ IC = 50 A (vs. 1000 @ 25 A for MJ11029G) | Suitable for higher-voltage rails (>60 V); lower gain at full current requires stronger base drive. | Select MJ11033G only when VCE stress exceeds 60 V; otherwise MJ11029G offers superior gain-efficiency tradeoff. |
| BDW53C | TO-220 package, IC = 12 A (not 50 A), VCEO = 100 V, no integrated shunt resistor or E-B diode | Limited to medium-power applications; requires external bias and protection components. | BDW53C is not a drop-in replacement; use only in redesigns where thermal and current demands are significantly lower. |
Compared with MJ11033G and BDW53C, the MJ11029G delivers optimal balance of high gain at mid-current, integrated protection, and TO-3 thermal performance for 60 V-class linear power stages - making it uniquely suited for audio and industrial amplification where reliability and drive simplicity are critical.
Availability
MJ11029G is available at Aetrix Electronics and suitable for audio power amplifiers, industrial motor drivers, and DC power supplies requiring stable component supply, long-lifecycle availability, and traceable Pb-free sourcing.
Supply support for MJ11029G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJ11029G belongs to onsemi's legacy high-power discrete transistor family, engineered specifically for rugged linear amplifier output stages and industrial power control where thermal resilience, high-current capability, and integrated protection are mandatory.
FAQ
What is the maximum continuous collector current rating for the MJ11029G?
The MJ11029G is rated for 50 A continuous collector current (IC) at case temperature TC = 25°C. This rating decreases with rising case temperature at a derating rate of 1.71 W/°C, and actual usable current depends on heatsink performance and ambient conditions. The device also supports 100 A pulsed operation (5 s, ≤10% duty cycle) as confirmed in the Safe Operating Area curves.
Does the MJ11029G have an integrated base-emitter shunt resistor, and what is its value?
Yes, the MJ11029G features a monolithically integrated base-emitter shunt resistor of approximately 3.0 kΩ. This resistor ensures reliable turn-off when the base is left floating or weakly driven, eliminating the need for an external pull-down resistor in most linear amplifier designs and improving system robustness against noise-induced conduction.
What is the thermal resistance from junction to case (RθJC) for the MJ11029G?
The MJ11029G has a specified thermal resistance of RθJC = 0.58°C/W. This value reflects the intrinsic thermal path from the silicon die to the metal TO-204 (TO-3) case surface and is critical for calculating junction temperature rise under load - for example, at 300 W dissipation, ΔTJ−C = 174°C, requiring careful heatsink design to stay within the +200°C absolute maximum junction temperature.
Can the MJ11029G be used in complementary pairs with NPN transistors, and which part is its direct counterpart?
Yes, the MJ11029G is explicitly designed as the PNP complement to the NPN MJ11028G. Both share identical TO-204 (TO-3) packaging, thermal characteristics, and electrical ratings (60 V VCEO, 50 A IC, 300 W PD), enabling matched performance in push-pull and Class-AB amplifier output stages without thermal or gain mismatch concerns.
Is the MJ11029G RoHS-compliant and what does the 'G' suffix indicate?
Yes, the 'G' suffix in MJ11029G denotes a Pb-free (RoHS-compliant) version per onsemi's Pb-Free Packaging Standard. It uses lead-free solder plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. The device is qualified for standard reflow profiles and carries full traceability documentation for industrial and automotive supply chain compliance.
MJ11029G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AE
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 50 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 3.5V @ 500mA, 50A
- Current - Collector Cutoff (Max):
- 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 25A, 5V
- Power - Max:
- 300 W
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
MJ11029G FAQ
1.How can I place an order for MJ11029G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJ11029G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJ11029G reliable?
The price and inventory of MJ11029G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJ11029G is usually 5 days.
3.What payment methods are accepted for MJ11029G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJ11029G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJ11029G?
MJ11029G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJ11029G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJ11029G?
For technical support, including MJ11029G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJ11029G requirements.
6.How does Aetrix verify that MJ11029G is sourced from the original manufacturer or authorized distributors?
All MJ11029G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJ11029G meets industry standards.
7.What is the process for return or replacement of MJ11029G?
All MJ11029G units undergo pre-shipment inspection (PSI). If there is an issue with MJ11029G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJ11029G part is unused and in its original packaging.
Return procedure for MJ11029G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJ11029G Tags

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