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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJ14001G

Name: MJ14001G
Brand: onsemi
SKU: MJ14001G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJ14001G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-204AE

Datasheet:: MJ14001G.pdf

Description:: TRANS PNP 60V 60A TO204

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Product details

Overview

MJ14001G from onsemi is a PNP high-current silicon power transistor designed for high-power amplifier and switching applications, with 60 V_CEO, 60 A continuous collector current, 300 W power dissipation at T_C = 25°C, and V_CE(sat) ≤ 2.5 V at I_C = 50 A - used in industrial motor drives and audio output stages.

For engineers reviewing the MJ14001G datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (TO-3), thermal resistance (R_θJC = 0.584°C/W), safe operating area limits, DC current gain range (h_FE = 15–100), and complementary NPN/PNP pairing context for robust power stage design.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and hard-switching modes, supporting DC and pulsed operation up to 200°C junction temperature. Its safe operating area (SOA) is defined by thermal limit (300 W at 25°C case), second breakdown, and wire bond constraints - validated per Figure 2 with pulse durations from 0.2 ms to DC.

The device exhibits h_FE = 30 (min) at I_C = 25 A and V_CE = 3.0 V, dropping to h_FE = 5.0 at I_C = 60 A, indicating strong current-handling capability with predictable gain compression under full load. V_BE(sat) reaches 4.0 V max at I_C/I_B = 5, confirming base drive requirements for saturation in high-current switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 Vdc - maximum collector-emitter voltage before breakdown under open-base conditions; sets upper rail limit in Class-AB audio or DC motor H-bridge top-side switches.
I_C Continuous	60 Adc - sustained collector current rating; enables single-device use in 2–3 kW power stages without parallel devices.
P_D @ T_C = 25°C	300 W - total power dissipation at case temperature 25°C; requires heatsink with θ_SA ≤ 0.3°C/W for T_J ≤ 150°C at full load.
V_CE(sat) Max	2.5 Vdc @ I_C = 50 A - low saturation voltage reduces conduction loss to ≤125 W at 50 A, critical for thermal management in high-duty-cycle switching.
h_FE	15–100 @ I_C = 50 A - wide DC current gain range supports both fixed-bias and emitter-follower configurations with predictable base drive scaling.
R_θJC	0.584°C/W - junction-to-case thermal resistance; enables direct mounting to heatsinks with minimal interface resistance for efficient heat extraction.
T_J Range	−65°C to +200°C - extended junction temperature capability allows operation in harsh environments including industrial ovens and engine compartments.

Pinout & Package

Package: TO-204 (TO-3), metal can with isolated collector case. Style 1 pinout confirmed per CASE 197A-05 mechanical drawing: Pin 1 = Base, Pin 2 = Emitter, Case = Collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Base	Current-controlled input terminal; requires ≥5 A base drive for full 60 A collector conduction, with V_BE(sat) up to 4.0 V.
Pin 2	Emitter	Common reference node in common-base or common-collector configurations; carries full emitter current (up to 75 A).
Case	Collector	Electrically active collector terminal; must be electrically isolated from heatsink unless circuit topology permits direct connection.

Key Features

Feature	Design Value
High current capability	60 A continuous collector current enables single-transistor implementation in high-power audio amplifiers and industrial inverters.
Low V_CE(sat)	≤2.5 V at 50 A minimizes conduction losses and simplifies thermal design for systems targeting >90% efficiency at full load.
Pb-free TO-3 package	G-suffix confirms RoHS-compliant lead-free finish and soldering compatibility per ON Semiconductor's Pb-Free strategy documentation.
Extended temperature range	−65°C to +200°C operating range supports deployment in aerospace power supplies and downhole oilfield electronics.
Complementary PNP pairing	Designed alongside MJ14002 (NPN) and MJ14003 (PNP) for matched push-pull and bridge configurations with consistent SOA and gain profiles.

Applications

Audio Power Amplifiers	DC Motor Drives
Use Scenario: High-fidelity Class-AB output stage delivering 100–500 W into 4–8 Ω loads in professional audio equipment. IC Role / Device Role / Timing Role: PNP output transistor in complementary pair with MJ14002, handling negative half-cycle current with precise bias control. Use Value: Low V_CE(sat) and stable h_FE across 1–60 A ensure low crossover distortion and consistent thermal behavior during dynamic program material.	Use Scenario: H-bridge top-side switch in 48–100 V DC motor controllers for automated guided vehicles (AGVs) and CNC axis drives. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase voltage; operated in saturation with forced base drive for fast turn-on/turn-off. Use Value: 60 A rating and 200°C T_J allow short-duration stall current handling without derating, improving system reliability under overload.
Industrial Power Supplies	Welding Equipment
Use Scenario: Linear pass element in high-current, low-noise lab bench power supplies requiring adjustable 0–30 V / 0–60 A output. IC Role / Device Role / Timing Role: Series pass transistor regulating output voltage via feedback-controlled base current; dissipates up to 300 W continuously. Use Value: 300 W power rating and 0.584°C/W R_θJC enable stable regulation without forced-air cooling when mounted on ≥150 cm² heatsink.	Use Scenario: Primary switching element in capacitor-discharge spot welders delivering 5–20 kA pulses at 1–10 Hz repetition rate. IC Role / Device Role / Timing Role: Main PNP switch controlling energy discharge from storage capacitors into welding transformer primary. Use Value: Validated SOA up to 10 ms pulses at 60 A ensures reliable triggering without second breakdown during repetitive high-peak-current events.

Audio Power Amplifiers

DC Motor Drives

Use Scenario: High-fidelity Class-AB output stage delivering 100–500 W into 4–8 Ω loads in professional audio equipment.

IC Role / Device Role / Timing Role: PNP output transistor in complementary pair with MJ14002, handling negative half-cycle current with precise bias control.

Use Value: Low V_CE(sat) and stable h_FE across 1–60 A ensure low crossover distortion and consistent thermal behavior during dynamic program material.

Use Scenario: H-bridge top-side switch in 48–100 V DC motor controllers for automated guided vehicles (AGVs) and CNC axis drives.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase voltage; operated in saturation with forced base drive for fast turn-on/turn-off.

Use Value: 60 A rating and 200°C T_J allow short-duration stall current handling without derating, improving system reliability under overload.

Industrial Power Supplies

Welding Equipment

Use Scenario: Linear pass element in high-current, low-noise lab bench power supplies requiring adjustable 0–30 V / 0–60 A output.

IC Role / Device Role / Timing Role: Series pass transistor regulating output voltage via feedback-controlled base current; dissipates up to 300 W continuously.

Use Value: 300 W power rating and 0.584°C/W R_θJC enable stable regulation without forced-air cooling when mounted on ≥150 cm² heatsink.

Use Scenario: Primary switching element in capacitor-discharge spot welders delivering 5–20 kA pulses at 1–10 Hz repetition rate.

IC Role / Device Role / Timing Role: Main PNP switch controlling energy discharge from storage capacitors into welding transformer primary.

Use Value: Validated SOA up to 10 ms pulses at 60 A ensures reliable triggering without second breakdown during repetitive high-peak-current events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJ14003G	Same TO-3 Pb-free package, but rated for V_CEO = 80 V and V_CBO = 80 V - higher voltage headroom at identical 60 A/300 W ratings.	Preferred for 60–80 V bus applications where margin against transients or inductive kickback is required.	Select MJ14003G when operating above 60 V DC bus or in circuits with unclamped inductive loads.
2N6292	PNP TO-3 transistor with V_CEO = 60 V, I_C = 40 A, P_D = 200 W - lower current/power rating and h_FE = 20–100 at I_C = 20 A.	Suitable for medium-power amplifiers or lower-current switching where thermal budget is constrained.	Choose 2N6292 only if 40 A peak and 200 W dissipation meet system requirements and footprint compatibility is confirmed.

Compared with MJ14001G, MJ14003G offers higher voltage tolerance without sacrificing current or thermal performance, while 2N6292 provides a legacy-compatible alternative with reduced power handling - neither is pin-compatible due to differing h_FE vs. I_C curves and SOA boundaries.

Availability

MJ14001G is available at Aetrix Electronics and suitable for industrial motor drives, high-power audio amplifiers, and linear power supplies requiring stable component supply with long-lifecycle support.

Supply support for MJ14001G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJ1400x series belongs to onsemi's high-current silicon power transistor product line, engineered specifically for ruggedized linear amplification and high-reliability switching in demanding industrial and audio applications.

FAQ

What is the maximum continuous collector current rating for MJ14001G?

The MJ14001G is rated for 60 A continuous collector current (I_C) at T_C = 25°C. This rating assumes proper heatsinking and derating per the 1.71 W/°C slope above 25°C case temperature. At T_C = 100°C, the usable I_C drops to approximately 47 A based on linear derating - always verify actual junction temperature using R_θJC = 0.584°C/W and interface thermal resistance.

Does MJ14001G have a Pb-free package?

Yes, the "G" suffix in MJ14001G explicitly denotes a Pb-free TO-3 package compliant with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets onsemi's Pb-Free Soldering and Mounting Techniques Reference Manual requirements, including compatible reflow profiles and wetting characteristics.

What is the safe operating area (SOA) limitation for MJ14001G at 10 ms pulse width?

Per Figure 2 of the official datasheet, the MJ14001G supports up to 60 A at 1 V_CE and ~15 A at 10 V_CE for 10 ms pulses at T_C = 25°C. This SOA boundary is governed by second breakdown limits, not thermal limits - exceeding it risks localized hot-spot formation and irreversible device failure even with adequate heatsinking.

Can MJ14001G be used in complementary pairs with MJ14002G?

Yes, MJ14001G (PNP) and MJ14002G (NPN) are explicitly designed as complementary high-current power transistors. They share identical TO-3 packaging, matching SOA curves, and closely aligned h_FE ranges - enabling symmetrical push-pull amplifier stages and full-bridge topologies without gain or timing mismatch issues.

What is the base-emitter saturation voltage V_BE(sat) for MJ14001G at full rated current?

The MJ14001G exhibits V_BE(sat) ≤ 4.0 Vdc at I_C = 60 A and I_B = 12 A (I_C/I_B = 5), per the Electrical Characteristics table. This value reflects worst-case forward-biased base-emitter junction drop under hard saturation - critical for sizing base drive circuitry to deliver ≥12 A peak current without excessive voltage overhead.

MJ14001G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-204AE

Packaging:: Tray

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 60 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 12A, 60A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 50A, 3V

Power - Max:: 300 W

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-204 (TO-3)

MJ14001G FAQ

1.How can I place an order for MJ14001G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJ14001G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJ14001G reliable?

The price and inventory of MJ14001G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJ14001G is usually 5 days.

3.What payment methods are accepted for MJ14001G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJ14001G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJ14001G?

MJ14001G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJ14001G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJ14001G?

For technical support, including MJ14001G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJ14001G requirements.

6.How does Aetrix verify that MJ14001G is sourced from the original manufacturer or authorized distributors?

All MJ14001G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJ14001G meets industry standards.

7.What is the process for return or replacement of MJ14001G?

All MJ14001G units undergo pre-shipment inspection (PSI). If there is an issue with MJ14001G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJ14001G part is unused and in its original packaging.

Return procedure for MJ14001G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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