Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJ14002G

Name: MJ14002G
Brand: onsemi
SKU: MJ14002G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MJ14002G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-204AE

Datasheet:: MJ14002G.pdf

Description:: TRANS NPN 80V 60A TO204

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:23

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MJ14002G from onsemi is an NPN high-current silicon power transistor in TO-3 metal package, rated for 80 V_CEO, 60 A continuous collector current, 300 W power dissipation at T_C = 25°C, with V_CE(sat) ≤ 2.5 V at I_C = 50 A and h_FE = 15–100. It serves as a main switching or linear amplification device in high-power audio amplifiers, industrial motor drives, and DC-DC converter output stages.

For engineers reviewing the MJ14002G datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V blocking capability, thermal resistance of 0.584°C/W (junction-to-case), safe operating area up to 200°C junction temperature, and Pb-free TO-3 packaging suitable for high-reliability industrial power systems.

Technical Context

This NPN bipolar junction transistor operates in linear or saturated switching modes, with base-emitter forward bias enabling controlled collector current flow up to 60 A. Its rugged SOA supports pulsed operation under second-breakdown-limited conditions, validated per Figure 2 at T_J(pk) = 200°C.

Thermal design relies on direct case mounting to heatsinks, leveraging low R_JC = 0.584°C/W and derating to 1.71 W/°C above 25°C. Electrical behavior is characterized at T_C = 25°C, with h_FE specified across three current points (25 A, 50 A, 60 A) and V_CE(sat) tested at matched I_B/I_C ratios (e.g., I_C/I_B = 10).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 Vdc - maximum collector-emitter voltage before breakdown under open-base condition
I_C Continuous	60 Adc - sustained collector current without thermal runaway when properly heatsinked
P_D @ T_C = 25°C	300 W - total power dissipation limit at case temperature of 25°C
V_CE(sat) Max	2.5 Vdc @ I_C = 50 A, I_B = 5 A - ensures low conduction loss in switching applications
h_FE	15–100 @ I_C = 50 A, V_CE = 3 V - enables predictable base drive sizing for high-current gain control
R_JC	0.584 °C/W - defines minimum thermal path resistance from junction to mounting surface
T_J Range	−65°C to +200°C - supports operation in extreme ambient and transient thermal environments

Pinout & Package

Package: TO-204 (TO-3) metal can, case style 197A-05, with collector connected to the case. Mounting requires electrically insulated hardware if collector is not at ground potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Base)	Control input terminal	Receives base current to modulate collector current; requires external current-limiting resistor in most driver circuits
Pin 2 (Emitter)	Current return path	Serves as common reference node for emitter-follower or grounded-emitter configurations
Case (Collector)	Main power output terminal	Electrically connected to collector; must be isolated from heatsink unless system ground is tied to collector

Key Features

Feature	Design Value
High-current capability	60 A continuous rating enables single-device use in 1–2 kW power stages without paralleling
Low saturation voltage	V_CE(sat) ≤ 2.5 V at 50 A reduces conduction losses and heat generation in switching mode
Rugged safe operating area	SOA validated to 200°C peak junction temperature supports pulse loads in motor control and welding
Pb-free TO-3 package	RoHS-compliant construction with no lead content, meeting global environmental compliance requirements
High-temperature operation	Rated up to +200°C junction temperature allows deployment in engine compartments and industrial enclosures

Applications

High-Power Audio Amplifiers	Industrial DC Motor Drives
Use Scenario: Output stage of 500–1000 W Class AB or Class G audio amplifiers driving low-impedance speaker loads. IC Role / Device Role / Timing Role: NPN power switch in complementary pair with PNP MJ14003G, handling positive half-cycle current delivery. Use Value: Low V_CE(sat) minimizes crossover distortion and thermal drift, while 60 A rating supports dynamic bass transients into 2–4 Ω loads.	Use Scenario: H-bridge or half-bridge output stage controlling brushed DC motors in CNC machines or conveyor systems. IC Role / Device Role / Timing Role: High-side or low-side switching element managing bidirectional current up to 60 A during acceleration/deceleration. Use Value: Robust SOA and 80 V rating tolerate back-EMF spikes during commutation, reducing need for snubbers or clamping diodes.
Switch-Mode Power Supply Outputs	Welding Equipment Inverters
Use Scenario: Primary-side switching transistor in high-current forward or push-pull DC-DC converters for telecom or server power. IC Role / Device Role / Timing Role: Main power switch conducting high-duty-cycle pulses at 20–100 kHz, dissipating up to 300 W intermittently. Use Value: 0.584°C/W R_JC enables efficient thermal coupling to heatsinks, maintaining T_J < 150°C under full load with forced air cooling.	Use Scenario: Inverter leg in IGBT-gated or transistor-based arc-welding power supplies delivering 30–60 A at 30–50 V. IC Role / Device Role / Timing Role: Linear or quasi-saturated regulator controlling weld current magnitude and ramp profiles. Use Value: Wide T_J range (−65°C to +200°C) accommodates repeated thermal cycling and ambient temperatures exceeding 70°C in enclosed weld cabinets.

High-Power Audio Amplifiers

Industrial DC Motor Drives

Use Scenario: Output stage of 500–1000 W Class AB or Class G audio amplifiers driving low-impedance speaker loads.

IC Role / Device Role / Timing Role: NPN power switch in complementary pair with PNP MJ14003G, handling positive half-cycle current delivery.

Use Value: Low V_CE(sat) minimizes crossover distortion and thermal drift, while 60 A rating supports dynamic bass transients into 2–4 Ω loads.

Use Scenario: H-bridge or half-bridge output stage controlling brushed DC motors in CNC machines or conveyor systems.

IC Role / Device Role / Timing Role: High-side or low-side switching element managing bidirectional current up to 60 A during acceleration/deceleration.

Use Value: Robust SOA and 80 V rating tolerate back-EMF spikes during commutation, reducing need for snubbers or clamping diodes.

Switch-Mode Power Supply Outputs

Welding Equipment Inverters

Use Scenario: Primary-side switching transistor in high-current forward or push-pull DC-DC converters for telecom or server power.

IC Role / Device Role / Timing Role: Main power switch conducting high-duty-cycle pulses at 20–100 kHz, dissipating up to 300 W intermittently.

Use Value: 0.584°C/W R_JC enables efficient thermal coupling to heatsinks, maintaining T_J < 150°C under full load with forced air cooling.

Use Scenario: Inverter leg in IGBT-gated or transistor-based arc-welding power supplies delivering 30–60 A at 30–50 V.

IC Role / Device Role / Timing Role: Linear or quasi-saturated regulator controlling weld current magnitude and ramp profiles.

Use Value: Wide T_J range (−65°C to +200°C) accommodates repeated thermal cycling and ambient temperatures exceeding 70°C in enclosed weld cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6277	Same TO-3 package, lower V_CEO = 60 V, I_C = 40 A, P_D = 200 W	Limited to ≤60 V systems; unsuitable for 80 V bus designs or high-back-EMF motor drives	Select only when voltage stress remains below 50 V and thermal margin exceeds 30%.
MJ15003	Higher V_CEO = 120 V, same I_C = 60 A, P_D = 250 W, R_JC = 0.6°C/W	Better voltage headroom but reduced power dissipation and slightly higher thermal resistance	Prefer for 100 V+ systems where MJ14002G's 80 V rating is marginal.

Compared with MJ14002G, 2N6277 offers lower cost but sacrifices 20 V blocking and 10 A current capacity, while MJ15003 trades 50 W dissipation for 40 V extra voltage margin-making MJ14002G optimal for 72–80 V industrial power rails requiring maximum thermal efficiency.

Availability

MJ14002G is available at Aetrix Electronics and suitable for high-power audio amplifiers, industrial DC motor drives, and switch-mode power supply outputs requiring stable component supply across extended production lifecycles.

Supply support for MJ14002G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJ14002G belongs to onsemi's high-current complementary power transistor family, designed specifically for ruggedized linear and switching applications demanding >50 A current, >80 V blocking, and operation beyond 150°C junction temperature.

FAQ

What is the maximum junction temperature rating for the MJ14002G?

The MJ14002G has an operating junction temperature range of −65°C to +200°C, with safe operating area curves validated at T_J(pk) = 200°C. This allows reliable use in high-ambient environments such as engine bays or sealed industrial enclosures, provided thermal design maintains average T_J within limits using the specified R_JC = 0.584°C/W and derating curve.

Is the MJ14002G pin-compatible with the MJ14001G or MJ14003G?

No-the MJ14002G is an NPN transistor, while MJ14001G and MJ14003G are PNP devices. Though all share identical TO-3 package pinout (Base, Emitter, Collector-case), their polarity prevents direct substitution without circuit redesign. Complementary operation requires pairing MJ14002G (NPN) with MJ14003G (PNP) in push-pull or Class AB amplifier outputs.

Does the MJ14002G require a heatsink, and what thermal interface is recommended?

Yes-the MJ14002G must be mounted to a heatsink capable of dissipating up to 300 W at T_C = 25°C. Use thermally conductive insulating pads or mica washers with silicone grease when electrical isolation is needed, as the collector is internally connected to the TO-3 case. Thermal resistance from junction to ambient depends entirely on heatsink design and airflow; R_JC = 0.584°C/W is fixed, but R_CA must be calculated separately.

What is the typical DC current gain (h_FE) of the MJ14002G at 60 A collector current?

Per the datasheet's ELECTRICAL CHARACTERISTICS table, the MJ14002G exhibits h_FE ≥ 5.0 and ≤ 100 at I_C = 60 A, V_CE = 3.0 V. Figure 3 shows typical h_FE ≈ 12–18 at this condition, confirming usable gain even at full-rated current-enabling simplified base drive design without excessive parallel transistor staging.

Can the MJ14002G be used in avalanche mode for inductive load switching?

No-the MJ14002G is not rated or characterized for repetitive avalanche operation. Its V_CEO(sus) = 80 V is a sustaining voltage under specified test conditions, not an avalanche energy rating. For inductive switching, external clamping (e.g., TVS diodes or RCD snubbers) is required to limit V_CE to ≤80 V and prevent secondary breakdown during turn-off.

MJ14002G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-204AE

Packaging:: Tray

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 60 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 12A, 60A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 50A, 3V

Power - Max:: 300 W

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-204 (TO-3)

MJ14002G FAQ

1.How can I place an order for MJ14002G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJ14002G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJ14002G reliable?

The price and inventory of MJ14002G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJ14002G is usually 5 days.

3.What payment methods are accepted for MJ14002G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJ14002G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJ14002G?

MJ14002G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJ14002G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJ14002G?

For technical support, including MJ14002G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJ14002G requirements.

6.How does Aetrix verify that MJ14002G is sourced from the original manufacturer or authorized distributors?

All MJ14002G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJ14002G meets industry standards.

7.What is the process for return or replacement of MJ14002G?

All MJ14002G units undergo pre-shipment inspection (PSI). If there is an issue with MJ14002G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJ14002G part is unused and in its original packaging.

Return procedure for MJ14002G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…