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onsemi MJB44H11
- Part No.:
- MJB44H11
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MJB44H11.pdf
- Description:
- TRANS NPN 80V 10A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,590
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Product details
Overview
MJB44H11 from onsemi is an NPN silicon power transistor in D2PAK (TO-263) surface-mount package, rated for 80 VCEO, 10 A continuous collector current, and 50 W power dissipation at TC = 25 °C, with VCE(sat) ≤ 1.0 V at IC = 8 A - optimized for high-current switching in DC-DC converters and motor driver output stages.
For engineers reviewing the MJB44H11 datasheet, pinout, applications, or equivalent options, key selection criteria include its low saturation voltage, thermal resistance (RJC = 2.5 °C/W), AEC-Q101 qualification status, and complementary pairing with MJB45H11 for H-bridge designs.
Technical Context
The MJB44H11 is a planar epitaxial NPN bipolar junction transistor designed for linear and switching operation in high-power, medium-voltage applications. Its safe operating area (SOA) supports pulsed currents up to 50 A at VCE = 10 V with 10% duty cycle, and it exhibits fT = 50 MHz at IC = 0.5 A, VCE = 10 V - confirming suitability for audio and SMPS switching frequencies.
Thermal design is enabled by direct case-to-heatsink mounting via the exposed collector tab (Pin 2 and Pin 4), with RJA = 75 °C/W at TA = 25 °C and RJC = 2.5 °C/W enabling high-power density layouts. The device operates across −55 °C to +150 °C junction temperature range and meets UL 94 V-0 flammability rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - maximum collector-emitter blocking voltage before breakdown; defines upper rail limit in 48 V and 60 V industrial power stages. |
| IC (cont.) | 10 A - continuous DC collector current capability at TC = 25 °C; supports ≥8 A load drive with margin under heatsink-limited conditions. |
| VCE(sat) | ≤1.0 V @ IC = 8 A, IB = 0.4 A - low conduction loss enables >95% efficiency in 12–48 V switch-mode topologies. |
| hFE | 60 min @ VCE = 1 V, IC = 2 A - sufficient DC gain for base-driven switching without excessive drive current overhead. |
| fT | 50 MHz - usable bandwidth for <10 MHz PWM switching; supports fast turn-on/turn-off with td+tr ≤ 300 ns. |
| RJC | 2.5 °C/W - enables direct thermal path to heatsink; allows 40 W dissipation at ΔT = 100 °C case-to-junction rise. |
| ESD (HBM) | >8 kV - robust handling during board assembly and field operation without external protection. |
Pinout & Package
D2PAK (TO-263) surface-mount package with 3-pin configuration (Pin 1: Base, Pin 2: Collector, Pin 3: Emitter, Pin 4: Collector - dual-collector tab for enhanced thermal and current handling). Exposed metal pad (Pins 2 & 4) serves as primary heat sink interface and high-current collector node.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Base | Control input for bipolar current amplification; requires ~0.4 A drive current to saturate at 8 A collector load. |
| Pin 2 & Pin 4 | Collector (dual) | High-current output node and primary thermal path; must be soldered to large copper pour or heatsink for rated power operation. |
| Pin 3 | Emitter | Reference terminal for base drive and current sensing; common return for load current in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | ≤1.0 V at 8 A ensures ≤8 W conduction loss per device - critical for thermally constrained 50 W amplifier or converter outputs. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTOL, and ESD - suitable for under-hood motor control modules. |
| UL 94 V-0 epoxy | Self-extinguishing encapsulation meets safety standards for industrial equipment enclosures and power supplies. |
| Complementary PNP pair | MJB45H11 shares identical D2PAK footprint and SOA - enables matched push-pull or half-bridge designs without layout redesign. |
| Pb-free (G suffix) | RoHS-compliant termination with matte tin plating; compatible with standard SnAgCu reflow profiles and no lead-free conversion required. |
Applications
| DC-DC Converter Output Stage | Industrial Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: High-current synchronous buck converter in 24–48 V industrial power supply delivering up to 10 A load current. IC Role / Device Role / Timing Role: NPN power switch in low-side configuration, driven by gate driver IC with 0.4 A peak base current. Use Value: Low VCE(sat) minimizes conduction loss; RJC = 2.5 °C/W enables compact heatsinking at full load. |
Use Scenario: Bidirectional 48 V BLDC motor phase leg in factory automation actuator, operating at 20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, paired with MJB45H11 as high-side PNP. Use Value: Matched SOA and thermal characteristics with MJB45H11 simplify thermal design; 300 ns td+tr supports clean edge fidelity. |
| Audio Power Amplifier Output | Switching Regulator Driver Stage |
|
Use Scenario: Class AB output stage in 50 W professional audio amplifier driving 4 Ω or 8 Ω loudspeakers. IC Role / Device Role / Timing Role: Linear-mode NPN output transistor biased into active region, dissipating up to 25 W continuously. Use Value: Wide SOA (up to 100 V × 1 A dc) and 150 °C max TJ support sustained linear operation without second breakdown. |
Use Scenario: Driver transistor feeding gate of high-current MOSFET in isolated flyback or forward converter primary side. IC Role / Device Role / Timing Role: Medium-power BJT buffer between PWM controller and MOSFET gate, sinking 1–2 A peak current. Use Value: Fast switching (tf ≤ 140 ns) and high hFE reduce driver losses; dual-collector pins handle high peak gate charge current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF06L | MOSFET (60 V, 16 A, RDS(on) = 0.05 Ω); gate-driven, no base current required. | Lower drive complexity but higher cost; lacks linear SOA for analog amplifier use. | Select when replacing BJT with MOSFET-based gate drive or zero-base-current requirement exists. |
| MJ15003 | Through-hole TO-3 (120 V, 20 A, VCE(sat) = 1.5 V); higher voltage/current, higher VCE(sat). | Requires PCB through-hole mounting and larger heatsink; not surface-mount compatible. | Select for legacy through-hole designs needing higher voltage headroom or proven ruggedness in audio amplifiers. |
Compared with STP16NF06L and MJ15003, the MJB44H11 offers optimal balance of surface-mount compatibility, low saturation voltage, and AEC-Q101 qualification - making it preferred for new industrial and automotive power modules where D2PAK footprint and thermal performance are prioritized.
Availability
MJB44H11 is available at Aetrix Electronics and suitable for DC-DC converters, motor driver half-bridges, and audio power amplifier output stages requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for MJB44H11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier focused on energy-efficient electronics, delivering high-performance power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJB44H11 belongs to onsemi's complementary power transistor family designed specifically for high-current, medium-voltage switching and linear amplification - emphasizing thermal robustness, SOA integrity, and automotive qualification.
FAQ
What is the maximum continuous collector current rating for the MJB44H11?
The MJB44H11 is rated for 10 A continuous collector current at case temperature TC = 25 °C. Derating applies above 25 °C at 0.4 W/°C, limiting usable current in unheatsinked or high-ambient environments. At TC = 100 °C, maximum continuous IC drops to approximately 5 A. This rating assumes proper PCB copper area and thermal vias under the D2PAK collector tab.
Is the MJB44H11 suitable for linear amplifier applications?
Yes, the MJB44H11 supports linear operation with a well-defined safe operating area (SOA) up to 100 V × 1 A (dc) and pulse limits validated to 150 °C junction temperature. Its SOA curve (Figure 2) confirms stability under resistive and reactive loads typical in Class AB audio output stages, provided adequate heatsinking maintains TJ ≤ 150 °C.
Does the MJB44H11 have automotive qualification?
Yes, the MJB44H11 is AEC-Q101 qualified and PPAP capable. This qualification covers stress testing for temperature cycling, high-temperature operating life, ESD (HBM > 8 kV), and mechanical robustness - confirming suitability for automotive body control modules, motor drivers, and power distribution units.
What is the thermal resistance from junction to case (RJC) for the MJB44H11?
The MJB44H11 has a maximum junction-to-case thermal resistance (RJC) of 2.5 °C/W, measured from the silicon die to the exposed collector tab (Pins 2 and 4). This value assumes full-surface soldering of the tab to a 1-in² copper pad with ≥6 thermal vias - enabling efficient heat transfer to external heatsinks in high-power applications.
How does the MJB44H11 differ from the NJVMJB44H11 variant?
The NJVMJB44H11 is an automotive-grade variant of the MJB44H11 with identical electrical and thermal specifications but distinct manufacturing controls: NJV prefix indicates unique site traceability, enhanced change control, and full PPAP documentation. Both share the same D2PAK package, pinout, and SOA - but only NJVMJB44H11 meets full automotive process requirements.
MJB44H11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 2 W
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
MJB44H11 FAQ
1.How can I place an order for MJB44H11 through Aetrix?
Please submit a Request for Quotation (RFQ) for MJB44H11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJB44H11 reliable?
The price and inventory of MJB44H11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJB44H11 is usually 5 days.
3.What payment methods are accepted for MJB44H11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJB44H11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJB44H11?
MJB44H11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJB44H11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJB44H11?
For technical support, including MJB44H11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJB44H11 requirements.
6.How does Aetrix verify that MJB44H11 is sourced from the original manufacturer or authorized distributors?
All MJB44H11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJB44H11 meets industry standards.
7.What is the process for return or replacement of MJB44H11?
All MJB44H11 units undergo pre-shipment inspection (PSI). If there is an issue with MJB44H11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJB44H11 part is unused and in its original packaging.
Return procedure for MJB44H11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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