Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics MJB44H11T4

Name: MJB44H11T4
Brand: STMicroelectronics
SKU: MJB44H11T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MJB44H11T4

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: MJB44H11T4.pdf

Description:: TRANS NPN 80V 10A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,613

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MJB44H11T4 from STMicroelectronics is a low-voltage NPN power transistor in D²PAK (TO-263) package, rated for 80 V V_CEO, 10 A continuous collector current, and 50 W total dissipation at T_case = 25 °C; it delivers low 1 V V_CE(sat) at I_C = 8 A / I_B = 0.4 A and high DC gain (h_FE ≥ 60 at I_C = 2 A), enabling efficient switching and linear amplification in industrial power stages.

For engineers reviewing the MJB44H11T4 datasheet, MJB44H11T4 pinout, MJB44H11T4 application, or MJB44H11T4 equivalent, key selection criteria include verified saturation voltage under high-current drive, thermal resistance (R_thJC = 2.5 °C/W), safe operating area (SOA) compliance, and D²PAK mechanical footprint compatibility with PCB layout and heatsink mounting requirements.

Technical Context

This device employs ST's low-voltage planar technology with double metal process to achieve high current gain and low on-state losses simultaneously. Its internal structure supports fast switching transitions due to minimized minority carrier storage time and optimized base doping profile.

The transistor operates with fixed-polarity NPN configuration, requiring external base drive control. It is not designed for avalanche operation or integrated protection functions-external snubbers and current-limiting circuitry must be implemented per application demands.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - maximum allowable collector-emitter voltage with base open; defines upper limit for blocking capability in switching applications
I_C	10 A - continuous DC collector current rating at T_case = 25 °C; determines usable output power level before thermal derating
V_CE(sat)	1 V max at I_C = 8 A / I_B = 0.4 A - low conduction loss enables high-efficiency power stage design
h_FE	60 min at I_C = 2 A / V_CE = 1 V - high DC current gain reduces required base drive current and driver complexity
R_thJC	2.5 °C/W - junction-to-case thermal resistance; enables direct heatsink mounting for reliable 50 W power handling
T_J(max)	150 °C - maximum junction temperature; sets thermal design margin for long-term reliability under load

Pinout & Package

Package: D²PAK (TO-263), surface-mount, single-ended power package with exposed metal tab for thermal and electrical connection to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal of NPN structure	Low-impedance return path for collector current; connects to ground or low-side reference in switch configurations
2 (Base)	Control electrode for minority carrier injection	Receives current-limited drive signal to modulate collector current; requires external series resistor for safe turn-on/turn-off
3 (Collector)	Main current-carrying terminal	Connected to power rail or load; electrically and thermally tied to exposed metal tab (TAB)
TAB (Collector)	Collector terminal extension	Provides primary thermal path to heatsink and secondary electrical connection point for collector; must be isolated from other potentials unless intentionally shorted

Key Features

Feature	Design Value
Low V_CE(sat)	1 V max at 8 A ensures <1 W conduction loss per device, reducing heat generation in parallel or high-duty-cycle operation
High h_FE	≥60 at 2 A enables use of low-power microcontroller GPIO or logic-level drivers without additional buffer stages
Fast switching speed	Verified by SOA curves and pulse test conditions (≤300 µs, ≤2% duty); supports kHz-range PWM in motor drives and SMPS
D²PAK thermal performance	R_thJC = 2.5 °C/W allows direct mounting to aluminum heatsinks without thermal interface material in moderate-power designs

Applications

Industrial Motor Drive Half-Bridge

DC-DC Converter Switch

Use Scenario: Used as low-side switch in 24–48 V brushed DC motor H-bridge modules delivering up to 10 A peak current.

IC Role / Device Role / Timing Role: NPN power switch controlled by gate driver IC; conducts during active PWM phase and blocks reverse EMF during freewheeling.

Use Value: Low V_CE(sat) minimizes conduction loss across full load range, improving thermal margin and efficiency over competing transistors with >1.3 V saturation.

Use Scenario: Employed as main switching element in non-isolated buck converter for industrial sensor power supplies (12 V out @ 5 A).

IC Role / Device Role / Timing Role: High-current unidirectional switch synchronizing with controller PWM signal; handles repetitive 20 A peak currents during transient loads.

Use Value: High h_FE and fast turn-on reduce driver power consumption and gate charge requirements, simplifying auxiliary bias design.

Linear Audio Power Amplifier

Relay/Solenoid Driver Stage

Use Scenario: Configured in Class AB output stage for 20 W audio amplifier driving 4 Ω loudspeakers in public address systems.

IC Role / Device Role / Timing Role: Linear-mode NPN emitter follower delivering high-current, low-distortion output with minimal thermal runaway risk.

Use Value: Stable h_FE across temperature and low V_BE(sat) enable precise biasing and consistent quiescent current control.

Use Scenario: Drives 24 V DC solenoids (1.2 A hold, 2.5 A pull-in) in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-gain saturated switch providing robust on/off control with immunity to contact bounce and EMI-induced false triggering.

Use Value: 10 A I_C rating provides 2× safety margin over solenoid surge current, ensuring long-term reliability without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF06L	N-channel MOSFET (60 V, 16 A), R_DS(on) = 0.05 Ω; no gate current but higher V_GS(th) threshold	Requires logic-level gate drive; unsuitable for linear amplification due to square-law transfer characteristic	Select when zero gate current and lower conduction loss at light loads are prioritized over analog linearity
BD249C	TO-126 NPN (80 V, 15 A), h_FE = 40–250, R_thJC = 3.5 °C/W; larger package, lower gain consistency	Through-hole mounting only; higher thermal resistance limits power density in compact layouts	Select for legacy through-hole designs where D²PAK rework is impractical and thermal budget permits higher junction rise

Compared with STP16NF06L and BD249C, the MJB44H11T4 uniquely balances high DC gain, low saturation voltage, and surface-mount D²PAK thermal performance-making it optimal for space-constrained, high-reliability linear and switching applications where bipolar drive simplicity and predictable SOA behavior are essential.

Availability

MJB44H11T4 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and relay driver circuits requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for MJB44H11T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The MJB44H11T4 belongs to ST's high-performance bipolar power transistor product line, engineered specifically for industrial-grade switching and linear amplification where robustness, thermal stability, and predictable gain behavior are critical.

FAQ

Is the MJB44H11T4 suitable for avalanche operation?

No. The device is not rated for repetitive avalanche energy or specified with E_AS parameters. Its absolute maximum ratings assume clamped inductive switching with external snubber networks or freewheeling diodes to prevent V_CE overshoot beyond 80 V.

What is the recommended PCB footprint for the D²PAK package?

The official footprint (Figure 7) specifies pad dimensions: 16.90 mm × 12.20 mm for the main thermal pad, with 3.50 mm spacing between inner pads and 5.08 mm pitch for signal pins. Minimum solder mask opening must expose full thermal pad area for optimal thermal transfer.

Does the MJB44H11T4 require a base resistor, and what value is typical?

Yes. A series base resistor is mandatory to limit I_B and prevent thermal runaway. For I_C = 8 A and h_FE = 60, minimum I_B ≈ 133 mA; with V_BE(sat) ≈ 1.5 V and 5 V drive, R_B ≈ 26 Ω (1 W rating recommended for pulse operation).

Can the TAB be electrically connected to the PCB ground plane?

Only if the collector node is referenced to ground. Since the TAB is internally connected to the collector, grounding it directly establishes a low-inductance collector return path-but requires full isolation of all other collector-connected traces and components from other potentials to avoid short circuits.

MJB44H11T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 50 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

MJB44H11T4 FAQ

1.How can I place an order for MJB44H11T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJB44H11T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJB44H11T4 reliable?

The price and inventory of MJB44H11T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJB44H11T4 is usually 5 days.

3.What payment methods are accepted for MJB44H11T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJB44H11T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJB44H11T4?

MJB44H11T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJB44H11T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJB44H11T4?

For technical support, including MJB44H11T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJB44H11T4 requirements.

6.How does Aetrix verify that MJB44H11T4 is sourced from the original manufacturer or authorized distributors?

All MJB44H11T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJB44H11T4 meets industry standards.

7.What is the process for return or replacement of MJB44H11T4?

All MJB44H11T4 units undergo pre-shipment inspection (PSI). If there is an issue with MJB44H11T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJB44H11T4 part is unused and in its original packaging.

Return procedure for MJB44H11T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…