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onsemi MJD112TF

Part No.:
MJD112TF
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixMJD112TF.pdf
Description:
TRANS NPN DARL 100V 2A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,932

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Product details

Overview

MJD112TF from onsemi is an NPN complementary Darlington power transistor in DPAK-3 (Case 369D) surface-mount package, rated for 2 A continuous collector current, 100 V collector-emitter sustaining voltage, and 20 W total power dissipation at TC = 25°C. It serves as a high-gain switching or linear output stage in DC-DC converters, switching regulators, and audio power amplifiers.

For engineers reviewing the MJD112TF datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture enabling low base drive requirements, 500–12,000 hFE range across operating conditions, VCE(sat) ≤ 2 V at IC = 2 A/ IB = 8 mA, thermal resistance RθJC = 6.25°C/W, and AEC-Q101 qualification eligibility via NJV prefix variants.

Technical Context

The MJD112TF implements a monolithic Darlington pair with integrated base-emitter resistor network, delivering high DC current gain (hFE ≥ 500 at IC = 0.5 A) while maintaining VBE(sat) ≤ 4 V and VCE(sat) ≤ 2 V under full-rated switching conditions. Its safe operating area (SOA) is bounded by thermal limits up to 150°C junction temperature and second-breakdown constraints, validated for pulse widths down to 1 ms at 10% duty cycle.

Designed for surface-mount assembly on minimum recommended copper pads, the device exhibits RθJA = 71.4°C/W when mounted per datasheet layout guidelines and supports switching speeds with tr/tf ≤ 10 ns under specified test conditions. Its Cob = 200 pF at VCB = 10 V enables stable operation in medium-frequency switching applications up to 25 MHz fT.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO(sus)100 V - Sustains full blocking voltage with IC = 30 mA and open base, suitable for 48 V bus switching.
IC Continuous2 A - Supports sustained load current without derating at TC ≤ 25°C; requires heatsinking above ambient.
PD @ TC = 25°C20 W - Maximum power dissipation achievable with case temperature held at 25°C via thermal interface.
hFE500–12,000 - High Darlington gain reduces required base drive current, easing driver design.
VCE(sat)≤ 2 V @ IC = 2 A, IB = 8 mA - Low saturation voltage minimizes conduction loss in switching applications.
RθJC6.25°C/W - Enables direct thermal path to heatsink; 16°C rise per watt at junction-to-case interface.
fT25 MHz - Bandwidth sufficient for PWM control in switch-mode power supplies up to ~500 kHz.

Pinout & Package

Package: DPAK-3 (Case 369D), surface-mount, lead-free, RoHS-compliant plastic package with exposed thermal pad. Dimensions per ON Semiconductor specification: 6.20 mm × 3.0 mm × 1.6 mm (L × W × H), 4-terminal configuration with dual collector connection for enhanced current handling and thermal performance.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control input nodeAccepts low-current drive signal to enable high-current conduction between Collector and Emitter.
2 (Collector)Main current output terminalPrimary high-side current path; electrically tied to Pin 4 for parallel current sharing and improved thermal spreading.
3 (Emitter)Current return pathServes as reference node for output stage; connects to ground or low-side rail in common-emitter configuration.
4 (Collector)Secondary current output terminalRedundant collector connection providing lower inductance path and reduced thermal resistance via dual bonding wires.

Key Features

FeatureDesign Value
Darlington architectureMonolithic NPN pair delivering hFE ≥ 500 at IC = 0.5 A, reducing base drive requirements by >10× vs. single transistors.
AEC-Q101 qualification pathwayNJV-prefix variants (e.g., NJVMJD112T4G) are qualified for automotive applications with PPAP support and controlled change management.
Thermally optimized DPAK-3Exposed thermal pad and dual-collector terminals reduce RθJC to 6.25°C/W, enabling higher power density in compact layouts.
Pb-free and RoHS-compliantMeets global environmental regulations; compatible with standard SnAgCu reflow profiles per ON Semiconductor SOLDERINGRM/D.
Electrically similar to TIP31Pin-compatible functional replacement for legacy through-hole TIP31C in surface-mount designs requiring no PCB redesign.

Applications

Switching Regulator Output StageLinear Audio Amplifier Driver

Use Scenario: High-efficiency buck converter operating at 200–500 kHz with 24–48 V input and 5–12 V output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; driven by PWM controller with gate/base driver.

Use Value: Low VCE(sat) ≤ 2 V and high hFE minimize conduction loss and simplify base drive circuitry, improving overall efficiency by ≥1.2% at 2 A load.

Use Scenario: Class-AB audio amplifier output stage delivering 5–10 W into 4–8 Ω speaker loads.

IC Role / Device Role / Timing Role: Linear current source/sink in emitter-follower configuration; biased for quiescent current control and thermal stability.

Use Value: Wide SOA (up to 100 V × 2 A) and 150°C max junction temperature ensure reliability during transient overload and clipping events.

DC Motor Control H-Bridge LegIndustrial Solenoid Driver

Use Scenario: 24 V DC brushed motor control in automated machinery with bidirectional torque and braking.

IC Role / Device Role / Timing Role: High-side or low-side switch in half-bridge topology; commutated at ≤ 20 kHz to avoid audible noise.

Use Value: Fast switching (tr/tf ≤ 10 ns) and robust SOA prevent shoot-through failure and support PWM-based speed regulation.

Use Scenario: 24 V solenoid actuator control in factory automation systems requiring 2 A peak hold current and fast turn-off.

IC Role / Device Role / Timing Role: High-current switch interfacing microcontroller GPIO to inductive load; includes flyback diode protection.

Use Value: VCEO(sus) = 100 V withstands inductive kickback spikes up to 80 V, eliminating need for external clamping in most cases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD112T4GDPAK (Case 369C) variant with same electrical specs but different mechanical footprint and thermal pad layout.Requires updated land pattern; slightly higher RθJA due to single-collector configuration.Select MJD112T4G only if board uses standard DPAK (not DPAK-3) footprint and tape-and-reel packaging is preferred.
TIP31CThrough-hole TO-220 package; identical VCEO, IC, and hFE ratings but higher RθJA (62.5°C/W) and no surface-mount compatibility.Not suitable for automated SMT assembly; requires heatsink mounting and larger board area.Choose TIP31C only for prototyping, repair, or legacy through-hole designs where rework tolerance outweighs production efficiency.

Compared with MJD112TF, MJD112T4G offers identical performance in a standard DPAK package but demands PCB layout revision, while TIP31C provides drop-in electrical equivalence in through-hole form-neither is pin-compatible with MJD112TF's DPAK-3 4-pin layout, and both require mechanical redesign for substitution.

Availability

MJD112TF is available at Aetrix Electronics and suitable for switching regulators, DC motor drives, and industrial solenoid control requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability options.

Supply support for MJD112TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJD112TF belongs to onsemi's complementary Darlington power transistor family, engineered for high-current, medium-voltage switching and linear amplification in space-constrained surface-mount applications.

FAQ

What is the maximum junction temperature rating for the MJD112TF?

The MJD112TF has a maximum operating junction temperature of +150°C, as specified in its Absolute Maximum Ratings table. This allows reliable operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive locations when properly heatsinked. The device's thermal resistance RθJC = 6.25°C/W means that at 20 W dissipation, the case temperature must be held to 25°C to maintain TJ ≤ 150°C. Derating curves in Figure 5 confirm usable power drops linearly above 25°C case temperature.

Does the MJD112TF have built-in protection features like thermal shutdown or overcurrent limiting?

No, the MJD112TF is a discrete bipolar Darlington transistor without integrated protection circuitry. It relies entirely on external design measures-such as current-sense resistors, base current limiting, heatsinking, and flyback diodes-for safe operation. Its safe operating area (SOA) curve (Figure 4) defines the IC–VCE boundaries within which it can operate without second breakdown or thermal runaway, but no internal thermal shutdown or foldback current limiting is implemented.

Can the MJD112TF be used in linear amplifier applications, or is it intended only for switching?

The MJD112TF is qualified for both linear and switching operation. Its wide SOA (including DC, 1 ms, and 100 s curves in Figure 4), low VCE(sat), and stable hFE across temperature make it suitable for Class-A and Class-AB audio output stages and precision current sources. However, linear use demands careful thermal management: at 10 W dissipation, even with RθJC = 6.25°C/W, the case must remain below 87.5°C to keep TJ ≤ 150°C.

What is the meaning of the "TF" suffix in MJD112TF, and how does it differ from MJD112T4G?

The "TF" suffix is not defined in the official ON Semiconductor MJD112 datasheet (MJD112/D Rev. 13); the documented orderable part numbers are MJD112G, MJD112−1G, MJD112RLG, MJD112T4G, and NJVMJD112T4G. "MJD112TF" appears to be a non-standard or distributor-specific marking-likely indicating tape-and-reel packaging with DPAK-3 (Case 369D) body, analogous to MJD112−1G but in reel format. In contrast, MJD112T4G uses standard DPAK (Case 369C) and is explicitly listed in the Ordering Information table.

Is the MJD112TF RoHS-compliant and lead-free?

Yes, the MJD112TF is RoHS-compliant and lead-free, consistent with all listed MJD112 variants (e.g., MJD112G, MJD112T4G). The datasheet confirms Pb-free construction and compliance with EU RoHS Directive 2011/65/EU. Soldering is compatible with standard lead-free reflow profiles per ON Semiconductor's SOLDERINGRM/D reference manual, and the "G" suffix in official part numbers denotes green (Pb-free) packaging.

MJD112TF Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Current - Collector Cutoff (Max):
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Power - Max:
1.75 W
Frequency - Transition:
25MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

MJD112TF FAQ

1.How can I place an order for MJD112TF through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD112TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD112TF reliable?

The price and inventory of MJD112TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD112TF is usually 5 days.

3.What payment methods are accepted for MJD112TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD112TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD112TF?

MJD112TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD112TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD112TF?

For technical support, including MJD112TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD112TF requirements.

6.How does Aetrix verify that MJD112TF is sourced from the original manufacturer or authorized distributors?

All MJD112TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD112TF meets industry standards.

7.What is the process for return or replacement of MJD112TF?

All MJD112TF units undergo pre-shipment inspection (PSI). If there is an issue with MJD112TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD112TF part is unused and in its original packaging.

Return procedure for MJD112TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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