Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MJD117-001

Part No.:
MJD117-001
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixMJD117-001.pdf
Description:
TRANS PNP DARL 100V 2A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,844

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MJD117-001 from ON Semiconductor is an NPN silicon Darlington transistor optimized for medium-power switching applications, featuring a 100 V collector-emitter sustaining voltage (VCEO(sus)), 2 A DC collector current rating, and integrated base-emitter clamping via internal damper diode. It operates with high DC current gain (hFE = 500–12,000 at IC = 0.5–4 A), low saturation voltage (VCE(sat) = 2–3 V), and is packaged in surface-mount D-PAK for motor driver and relay control circuits.

For engineers reviewing the MJD117-001 datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCEO(sus) ≥ 100 V, hFE stability across 0.5–4 A load range, built-in emitter-clamp diode functionality, thermal performance under TC = 25°C (PC = 20 W), and D-PAK mechanical compatibility with automated SMT assembly.

Technical Context

The MJD117-001 implements a monolithic Darlington pair structure with emitter-follower configuration, delivering high current amplification while maintaining single-base control. Its internal damper diode connects collector to emitter, enabling inductive load flyback suppression without external components.

Designed for linear and switched-mode operation, it supports pulse currents up to 4 A (ICP) with 2% duty cycle, exhibits fT = 25 MHz at VCE = 10 V / IC = 0.75 A, and maintains safe operating area (SOA) compliance up to 100 V × 2 A in DC mode per published curves.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO(sus)100 V - Sustaining voltage under open-base conditions; enables reliable switching of 48 V industrial loads with margin.
IC (DC)2 A - Continuous collector current capability; supports solenoid drivers and small-motor H-bridge legs.
hFE500–12,000 - DC current gain range across 0.5–4 A; reduces required base drive current in high-side switch designs.
VCE(sat)2–3 V - Saturation voltage at IC = 2–4 A / IB = 8–40 mA; limits conduction loss to ≤6 W at 2 A.
PC (TC = 25°C)20 W - Maximum power dissipation with heatsink; requires thermal interface design for >1.5 A continuous use.
fT25 MHz - Current-gain bandwidth product; supports PWM frequencies up to ~1–2 MHz with gain margin.
Cob100 pF - Output capacitance at VCB = 10 V; impacts turn-off speed and EMI in fast-switching applications.

Pinout & Package

Package: D-PAK (TO-252AA), surface-mount, single-ended heat sink tab (pin 2), lead-formed for reflow soldering.

Pin/Terminal Circuit Role Design Meaning
1 (Base)Control inputDirectly drives Darlington pair; requires current-limited source (RB ≥ 10 Ω typical) to avoid overdrive.
2 (Collector)Power output nodeConnected to heatsink tab; electrically common with thermal pad - must be isolated from PCB ground unless referenced.
3 (Emitter)Current return pathInternally tied to damper diode cathode; provides flyback path for inductive loads without external diode.

Key Features

Feature Design Value
Integrated damper diodeEliminates need for external flyback diode in relay/solenoid drivers, reducing BOM count and board space.
High hFE at full loadMinimum hFE = 200 at IC = 4 A ensures stable base drive requirements even under peak pulse conditions.
D-PAK thermal performance20 W dissipation at TC = 25°C enables compact heatsinking in space-constrained industrial controls.
VCEO(sus) = 100 VSupports 48 V nominal bus systems with 100% safety margin against transients and inductive kick.

Applications

Industrial Relay Drivers DC Motor Speed Controllers

Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules with 100 ms on/off cycling.

IC Role / Device Role / Timing Role: High-gain NPN Darlington switch providing low-input-current actuation of coil loads up to 2 A.

Use Value: Built-in damper diode prevents voltage spikes exceeding 100 V, eliminating snubber networks and improving system reliability.

Use Scenario: Low-frequency PWM control of brushed DC motors in HVAC actuators and valve positioners (≤5 kHz).

IC Role / Device Role / Timing Role: Power stage switch in half-bridge or high-side configuration handling 1–2 A continuous motor current.

Use Value: VCE(sat) ≤ 3 V at 2 A minimizes conduction loss (<6 W), reducing heatsink size versus standard bipolar transistors.

Power Supply OR-ing Circuits Linear Regulator Pass Elements

Use Scenario: Diode-replacement in dual-input 12–24 V redundant power supplies for network infrastructure equipment.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes to reduce forward drop and improve efficiency.

Use Value: VCE(sat) = 2 V at 2 A cuts conduction loss by >50% vs. 0.4 V Schottky, enabling higher current density in compact enclosures.

Use Scenario: Pass transistor in adjustable linear regulators supplying 1–2 A to analog sensor signal chains.

IC Role / Device Role / Timing Role: Series pass element with high hFE enabling simple base-bias networks and low dropout operation.

Use Value: hFE ≥ 500 at IC = 0.5 A allows precise current mirror-based biasing, improving regulation accuracy and thermal stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD112Identical die and D-PAK package; same VCEO(sus), hFE, and VCE(sat); underscore-to-dash nomenclature update only.No functional difference; used interchangeably in legacy designs where part number format permits.Select MJD112 when sourcing from distributors listing original Fairchild nomenclature; identical electrical and thermal behavior.
BD679ALower VCEO(sus) = 80 V, lower PC = 15 W, TO-126 package; no integrated damper diode.Requires external flyback diode; unsuitable for 48 V bus systems without derating.Choose BD679A only for cost-sensitive 24 V applications with adequate voltage margin and available board space for discrete clamping.

Compared with MJD117-001, MJD112 offers identical performance with legacy naming, while BD679A trades integration and voltage rating for lower cost and through-hole assembly - making MJD117-001 optimal for new SMT designs requiring 100 V robustness and diode integration.

Availability

MJD117-001 is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed controllers, and redundant power supply OR-ing circuits requiring stable component supply, long-term lifecycle support, and consistent D-PAK thermal performance.

Supply support for MJD117-001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJD117-001 belongs to ON Semiconductor's legacy power bipolar transistor family, designed specifically for high-current, medium-voltage switching in industrial controls where integration, reliability, and thermal efficiency are critical.

FAQ

What is the maximum continuous collector current rating for MJD117-001?

The MJD117-001 has a maximum DC collector current (IC) rating of 2 A at TC = 25°C. This value assumes proper heatsinking; derating is required above 25°C case temperature per the published power derating curve. At TC = 100°C, usable IC drops to approximately 1.2 A. The MJD117-001 must not exceed this limit in sustained operation to maintain reliability and SOA compliance.

Does MJD117-001 include an integrated damper diode, and how is it connected?

Yes, the MJD117-001 integrates a damper diode between collector and emitter terminals, with cathode at collector and anode at emitter. This configuration provides automatic flyback path for inductive loads, eliminating the need for external diodes in relay and solenoid driver applications. The MJD117-001 datasheet confirms this topology in its equivalent circuit diagram and feature list.

What is the pin configuration of MJD117-001 in the D-PAK package?

The MJD117-001 uses a standard D-PAK (TO-252AA) pinout: Pin 1 is Base, Pin 2 is Collector (electrically connected to the exposed thermal tab), and Pin 3 is Emitter. This layout is confirmed in the mechanical drawings and equivalent circuit diagram of the official ON Semiconductor datasheet for MJD117-001.

How does the DC current gain (hFE) of MJD117-001 vary with collector current?

The MJD117-001 specifies hFE = 500 (min) at IC = 0.5 A, 1000 (min) at IC = 2 A, and 200 (min) at IC = 4 A (pulse). This non-monotonic behavior reflects Darlington optimization for mid-range loads. Designers must verify hFE at their target IC using the published hFE vs. IC curve - the MJD117-001 delivers highest gain near 2 A, supporting efficient base drive design.

Is MJD117-001 compatible with lead-free reflow soldering processes?

Yes, the MJD117-001 D-PAK package is rated for lead-free reflow soldering per J-STD-020. Its moisture sensitivity level (MSL) is 1, meaning unlimited floor life at ≤30°C/60% RH. Peak reflow temperature must not exceed 260°C for ≤30 seconds. These specifications are documented in ON Semiconductor's packaging standards and apply directly to the MJD117-001 device.

MJD117-001 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP - Darlington
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Current - Collector Cutoff (Max):
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Power - Max:
1.75 W
Frequency - Transition:
25MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

MJD117-001 FAQ

1.How can I place an order for MJD117-001 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD117-001 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD117-001 reliable?

The price and inventory of MJD117-001 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD117-001 is usually 5 days.

3.What payment methods are accepted for MJD117-001?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD117-001 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD117-001?

MJD117-001 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD117-001 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD117-001?

For technical support, including MJD117-001 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD117-001 requirements.

6.How does Aetrix verify that MJD117-001 is sourced from the original manufacturer or authorized distributors?

All MJD117-001 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD117-001 meets industry standards.

7.What is the process for return or replacement of MJD117-001?

All MJD117-001 units undergo pre-shipment inspection (PSI). If there is an issue with MJD117-001, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD117-001 part is unused and in its original packaging.

Return procedure for MJD117-001:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJD117-001 Tags

  • MJD117-001
  • MJD117-001 PDF
  • MJD117-001 Datasheet
  • MJD117-001 Specifications
  • MJD117-001 Images
  • onsemi
  • onsemi MJD117-001
  • Buy MJD117-001
  • MJD117-001 Price
  • MJD117-001 Distributor
  • MJD117-001 Supplier
  • MJD117-001 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER