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onsemi MJD122TF
, SC-63.JPG)
- Part No.:
- MJD122TF
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD122TF.pdf
- Description:
- TRANS NPN DARL 100V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,156
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Product details
Overview
MJD122TF from onsemi is an NPN complementary Darlington power transistor in DPAK surface-mount package, rated for 8 A continuous collector current, 100 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It features monolithic construction with built-in base-emitter shunt resistors, high DC current gain (hFE = 1000–12,000), and AEC-Q101 qualification for automotive applications.
For engineers reviewing the MJD122TF datasheet, pinout, applications, or equivalent options, this device is selected for low-speed switching and general-purpose amplifier roles where high current gain, robust thermal performance (RθJC = 6.25 °C/W), and surface-mount reliability are required in motor drivers, power supplies, and industrial controls.
Technical Context
The MJD122TF implements a monolithic Darlington pair with integrated base-emitter shunt resistors to ensure stable turn-off and reduce external component count. Its structure supports operation up to 150 °C junction temperature and delivers hFE ≥ 1000 at IC = 4 A, VCE = 4 V, enabling efficient base drive simplification in high-current linear and switching circuits.
Designed as a surface-mount replacement for through-hole TIP120–TIP122 series transistors, it maintains compatible electrical behavior while offering improved thermal resistance (RθJA = 71.4 °C/W on minimum recommended pad) and ESD robustness (HBM > 8 kV). Its Cob = 200 pF at VCB = 10 V enables predictable switching in <1 MHz applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions; defines voltage headroom in relay drivers and DC-DC output stages. |
| IC (continuous) | 8 A - Continuous collector current rating at TC = 25 °C; sets maximum steady-state load capability in motor control H-bridge legs. |
| PD (TC = 25 °C) | 20 W - Total power dissipation limit when case temperature is maintained at 25 °C; requires heatsinking or PCB copper area for thermal management. |
| hFE (IC = 4 A) | 1000–12,000 - DC current gain range enabling single-stage base drive with ~16 mA input to switch 4–8 A loads; reduces need for pre-driver stages. |
| VCE(sat) (IC = 8 A) | 4 V - Collector-emitter saturation voltage at full rated current; determines conduction loss (32 W worst-case) and thermal design margin. |
| RθJC | 6.25 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting to manage temperature rise of ≤50 °C at 8 A conduction. |
| Cob | 200 pF - Output capacitance at VCB = 10 V; impacts switching speed and gate drive requirements in PWM circuits below 1 MHz. |
Pinout & Package
Package: DPAK (Case 369C), surface-mount, 4-pin outline with dual collector terminals (Pins 2 and 4), base on Pin 1, emitter on Pin 3. Dimensions: 6.10 × 6.54 × 2.28 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Base | Control input node; accepts low-current drive (≤120 mA max) to enable high-gain Darlington switching; internal shunt resistor ensures reliable turn-off. |
| Pin 2 | Collector | Main high-current output terminal; electrically tied to Pin 4; used for high-side or low-side switching connections in power stage layouts. |
| Pin 3 | Emiter | Power return path; connects to load or ground reference; carries full load current and must be routed with low-inductance, wide copper traces. |
| Pin 4 | Collector | Second collector terminal, internally bonded to Pin 2; provides redundant connection for enhanced current handling and thermal spreading across PCB pads. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington with shunt resistors | Eliminates external base pull-down components and guarantees consistent turn-off behavior across temperature and production lots. |
| AEC-Q101 qualified (NJV variant) | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock-applicable to MJD122TF's NJV-marked equivalents. |
| High hFE (1000–12,000) | Enables direct microcontroller GPIO driving without buffer transistors in ≤8 A applications, reducing BOM count and board space. |
| UL 94 V-0 epoxy | Self-extinguishing plastic housing meets flammability safety standards for enclosed industrial and automotive enclosures. |
| HBM ESD > 8 kV | Robust electrostatic discharge immunity simplifies handling and assembly in non-ESD-controlled environments without added protection circuitry. |
Applications
| DC Motor Driver Stage | Linear Power Supply Pass Element |
|---|---|
|
Use Scenario: Driving 24 V, 5 A brushed DC motors in automotive seat adjusters or industrial actuators using PWM at ≤20 kHz. IC Role / Device Role / Timing Role: NPN Darlington switch operating in saturation/linear region to regulate motor current and direction via H-bridge configuration. Use Value: High hFE minimizes base drive power (≤16 mA), while VCE(sat) ≤ 4 V limits conduction loss to ≤20 W at full load, easing thermal design. |
Use Scenario: As the series pass transistor in a 12 V, 6 A adjustable linear regulator supplying FPGA or analog sensor subsystems. IC Role / Device Role / Timing Role: Linear-mode current amplifier controlling output voltage via feedback loop; dissipates variable power based on input-output differential. Use Value: RθJC = 6.25 °C/W enables effective heatsink coupling, supporting stable operation up to 150 °C junction temperature under transient overload. |
| Industrial Relay Driver | AC Solid-State Switch Interface |
|
Use Scenario: Replacing electromechanical relays in PLC output modules switching 24–48 V DC loads up to 8 A. IC Role / Device Role / Timing Role: High-current, low-speed switch interfacing microcontroller logic to inductive solenoid or valve loads. Use Value: Built-in base shunt resistors prevent false turn-on from leakage, and VCEO = 100 V accommodates 2× supply voltage flyback spikes without snubbers. |
Use Scenario: Controlling AC mains-powered heating elements or lighting loads via zero-crossing triac driver circuits in smart energy meters. IC Role / Device Role / Timing Role: DC-side interface transistor amplifying MCU output to trigger opto-triacs or pulse transformers driving AC switching devices. Use Value: 100 V VCEO and 8 A IC support robust isolation barrier drive with margin against line transients and surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TIP122 | Through-hole TO-220 package; identical VCEO, IC, hFE specs but higher RθJA (65 °C/W vs. 71.4 °C/W); no AEC-Q101 qualification. | Requires socket or through-hole PCB layout; unsuitable for automated SMT lines or space-constrained automotive modules. | Select when legacy through-hole compatibility or manual prototyping is prioritized over surface-mount scalability. |
| MJD122T4G | Same die and DPAK package as MJD122TF; differs only in tape-and-reel packaging (2500 pcs/reel vs. 75 units/rail); identical electrical and thermal specs. | No functional difference; intended for high-volume automated assembly rather than sample or low-volume use. | Choose MJD122T4G for production runs requiring pick-and-place compatibility; MJD122TF is rail-packaged for evaluation and small-batch builds. |
Compared with TIP122 and MJD122T4G, the MJD122TF offers identical core performance in a rail-packaged DPAK format optimized for engineering validation-providing AEC-Q101 readiness and SMT process alignment without compromising gain, voltage, or thermal capability.
Availability
MJD122TF is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and linear power supply designs requiring stable component supply, automotive-grade reliability, and surface-mount manufacturability.
Supply support for MJD122TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MJD122TF belongs to onsemi's complementary Darlington power transistor family, engineered for high-current, low-speed switching and linear amplification in harsh-environment applications demanding AEC-Q101 compliance and robust thermal performance.
FAQ
What is the maximum continuous collector current rating for the MJD122TF?
The MJD122TF is rated for 8 A continuous collector current at case temperature TC = 25 °C. Derating applies above 25 °C at 0.16 W/°C for power dissipation, and actual current capability depends on PCB copper area, heatsinking, and ambient conditions. At TC = 100 °C, the usable IC drops to approximately 4.5 A per the thermal derating curve in the datasheet.
Does the MJD122TF have built-in base-emitter resistors?
Yes, the MJD122TF uses monolithic construction with integrated base-emitter shunt resistors. This design ensures reliable turn-off without external pull-down components, suppresses leakage-induced false triggering, and simplifies drive circuitry-especially beneficial in microcontroller-driven applications where GPIO current is limited.
Is the MJD122TF suitable for automotive applications?
The MJD122TF itself is not explicitly AEC-Q101 qualified; however, its NJV-prefix variant (NJVMJD122T4G) is AEC-Q101 qualified and PPAP capable. Engineers selecting MJD122TF for automotive prototypes should verify qualification status with onsemi documentation and consider NJVMJD122T4G for production releases requiring formal automotive compliance.
What is the thermal resistance from junction to case (RθJC) for the MJD122TF?
The MJD122TF has a junction-to-case thermal resistance of 6.25 °C/W. This value assumes proper mounting to a heatsink or thermally enhanced PCB pad. It enables precise calculation of junction temperature rise: TJ = TC + (PD × 6.25), critical for ensuring operation stays within the −65 °C to +150 °C junction temperature range.
How does the MJD122TF compare to the TIP122 in terms of package and assembly?
The MJD122TF uses a surface-mount DPAK package (Case 369C), while the TIP122 uses a through-hole TO-220 package. This makes the MJD122TF compatible with automated SMT assembly lines, reduces board space, and improves vibration resistance-key advantages in automotive and portable industrial equipment where the TIP122 would require manual insertion or wave soldering.
MJD122TF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 4V @ 80mA, 8A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 4A, 4V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD122TF FAQ
1.How can I place an order for MJD122TF through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD122TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD122TF reliable?
The price and inventory of MJD122TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD122TF is usually 5 days.
3.What payment methods are accepted for MJD122TF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD122TF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD122TF?
MJD122TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD122TF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD122TF?
For technical support, including MJD122TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD122TF requirements.
6.How does Aetrix verify that MJD122TF is sourced from the original manufacturer or authorized distributors?
All MJD122TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD122TF meets industry standards.
7.What is the process for return or replacement of MJD122TF?
All MJD122TF units undergo pre-shipment inspection (PSI). If there is an issue with MJD122TF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD122TF part is unused and in its original packaging.
Return procedure for MJD122TF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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