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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD18002D2T4G

Name: MJD18002D2T4G
Brand: onsemi
SKU: MJD18002D2T4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD18002D2T4G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: MJD18002D2T4G.pdf

Description:: TRANS NPN 450V 2A DPAK

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Product details

Overview

MJD18002D2T4G from onsemi is a high-speed, high-gain bipolar NPN power transistor with integrated collector-emitter freewheeling diode and built-in antisaturation network. It delivers 2 A continuous collector current, 450 V V_CEO, 50 W power dissipation at T_C = 25°C, and guaranteed low storage time (±150 ns), making it suitable for electronic light ballast and PFC circuits.

For engineers reviewing the MJD18002D2T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its integrated diode, dynamic V_CE(sat) characterization, 1000 V V_CBO/V_CES rating, H2BIP structure for tight parameter spread, and DPAK-3 package compatibility with industrial switching designs.

Technical Context

The MJD18002D2T4G employs an H2BIP (High-Speed High-Gain Bipolar) structure that minimizes storage time variation across lots (±150 ns), eliminating the need for h_FE window guarantees. Its integrated collector-emitter diode enables self-contained flyback energy handling in inductive switching.

Dynamic saturation voltage is fully characterized at 1 s and 3 s after base drive rise, with values as low as 2.5 V (IC = 0.4 A) and 1.3 V (IC = 1.0 A) at 25°C - critical for minimizing conduction loss during transient recovery in PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	450 Vdc - sustains 450 V between collector and emitter under open-base conditions, enabling use in 277 VAC input PFC front-ends.
I_C Continuous	2.0 Adc - supports continuous 2 A load current without derating at T_C = 25°C, sufficient for 100–150 W ballast drivers.
P_D @ T_C = 25°C	50 W - maximum junction-to-case power dissipation before thermal derating begins, requiring heatsink design per R_JC = 5.0 °C/W.
h_FE @ I_C = 0.4 A	14–25 (25°C) - high DC gain reduces required base drive current, easing gate driver sizing in discrete switch designs.
t_s Storage Time	0.4–0.7 µs (25°C) - tightly controlled due to H2BIP architecture, ensuring consistent turn-off timing in high-frequency ballast control.
V_CE(sat) @ I_C = 1.0 A	0.40–0.75 Vdc (25°C) - low saturation voltage minimizes conduction loss and thermal stress in high-duty-cycle operation.
C_ob	50–100 pF - output capacitance impacts switching speed and EMI in hard-switched topologies; value validated at V_CB = 10 V.

Pinout & Package

DPAK-3 (Case 369C, Style 1) surface-mount package with exposed collector tab for thermal performance and mechanical robustness. Pin 1: Base; Pin 2: Collector; Pin 3: Emitter; Pin 4: Collector (dual-collector configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to drive transistor into saturation; low base drive requirement (IB = 40 mA typical for IC = 0.4 A) eases driver selection.
2 (Collector)	Main high-voltage current path	Primary collector terminal; electrically tied to Pin 4; connects to high-side switch node or inductive load return.
3 (Emitter)	Current return / reference node	Serves as common emitter node; referenced for base drive and diode cathode connection in integrated freewheeling path.
4 (Collector)	Secondary collector terminal	Dual-collector configuration improves current sharing and thermal distribution; both pins must be soldered to PCB copper pour for optimal R_JC.

Key Features

Feature	Design Value
Integrated C–E freewheeling diode	Enables single-device inductive energy recirculation without external diode, reducing BOM count and layout area in ballast/PFC designs.
H2BIP structure with ±150 ns t_s guarantee	Eliminates lot-to-lot h_FE window specification, simplifying production binning and improving system timing predictability.
Guaranteed dynamic V_CE(sat)	Characterized at 1 s and 3 s post-turn-on, supporting accurate loss modeling in transient-heavy applications like lamp ignition.
1000 V V_CBO/V_CES rating	Provides margin against voltage spikes in inductive switching, allowing safe operation in 400 V bus systems with clamping.
Pb-free DPAK package (UL 94 V-0)	Meets RoHS compliance and flammability requirements for commercial/industrial lighting enclosures.

Applications

Electronic Light Ballast	Power Factor Correction
Use Scenario: Driving resonant LC tank in fluorescent lamp electronic ballasts operating at 20–60 kHz. IC Role / Device Role / Timing Role: Main high-voltage switching transistor controlling lamp current via zero-voltage switching (ZVS) topology. Use Value: Tight storage time control (±150 ns) ensures consistent ZVS timing across production units, reducing acoustic noise and lamp flicker.	Use Scenario: Boost switch in active PFC stage for LED drivers and industrial power supplies (85–277 VAC input). IC Role / Device Role / Timing Role: High-voltage, medium-current boost switch handling peak currents up to 5 A during line peaks. Use Value: Integrated C–E diode eliminates need for external fast recovery diode, reducing component count and board space while maintaining efficiency >95%.
Inductive Load Switching	High-Voltage Relay Replacement
Use Scenario: Solid-state switching of solenoids, contactors, or magnetic actuators in HVAC and industrial controls. IC Role / Device Role / Timing Role: Primary switching element handling inductive kickback with clamped V_CE up to 300 V. Use Value: Reverse-bias SOA validated under clamped conditions prevents avalanche failure, enabling reliable 100,000+ cycle life without snubber networks.	Use Scenario: Replacing electromechanical relays in smart meter load switches and energy management systems. IC Role / Device Role / Timing Role: High-reliability, solid-state main power switch rated for 450 V blocking and 2 A continuous load. Use Value: 1000 V V_CBO rating provides overvoltage margin during transients, while low V_CE(sat) (<0.75 V) minimizes self-heating in always-on standby configurations.

Electronic Light Ballast

Power Factor Correction

Use Scenario: Driving resonant LC tank in fluorescent lamp electronic ballasts operating at 20–60 kHz.

IC Role / Device Role / Timing Role: Main high-voltage switching transistor controlling lamp current via zero-voltage switching (ZVS) topology.

Use Value: Tight storage time control (±150 ns) ensures consistent ZVS timing across production units, reducing acoustic noise and lamp flicker.

Use Scenario: Boost switch in active PFC stage for LED drivers and industrial power supplies (85–277 VAC input).

IC Role / Device Role / Timing Role: High-voltage, medium-current boost switch handling peak currents up to 5 A during line peaks.

Use Value: Integrated C–E diode eliminates need for external fast recovery diode, reducing component count and board space while maintaining efficiency >95%.

Inductive Load Switching

High-Voltage Relay Replacement

Use Scenario: Solid-state switching of solenoids, contactors, or magnetic actuators in HVAC and industrial controls.

IC Role / Device Role / Timing Role: Primary switching element handling inductive kickback with clamped V_CE up to 300 V.

Use Value: Reverse-bias SOA validated under clamped conditions prevents avalanche failure, enabling reliable 100,000+ cycle life without snubber networks.

Use Scenario: Replacing electromechanical relays in smart meter load switches and energy management systems.

IC Role / Device Role / Timing Role: High-reliability, solid-state main power switch rated for 450 V blocking and 2 A continuous load.

Use Value: 1000 V V_CBO rating provides overvoltage margin during transients, while low V_CE(sat) (<0.75 V) minimizes self-heating in always-on standby configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar bipolar power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD10NB60KD	600 V, 10 A N-channel MOSFET with integrated fast diode; higher voltage rating but no bipolar gain control.	Used in higher-power (>200 W) PFC where gate drive simplicity and lower switching loss outweigh need for linear gain control.	Select when prioritizing zero gate charge and lower Q_g over analog base drive flexibility and cost-sensitive BOMs.
MJD127T4G	100 V V_CEO, 2 A NPN; lacks integrated diode and H2BIP structure; higher storage time variation (±500 ns).	Suitable for low-voltage DC-DC converters or relay drivers where 450 V rating and tight timing are unnecessary.	Choose only for cost-sensitive, non-ballast applications below 120 V bus; not interchangeable in light ballast or PFC designs.

Compared with STGD10NB60KD and MJD127T4G, the MJD18002D2T4G uniquely combines 450 V blocking, integrated diode, and ±150 ns storage time control - essential for timing-critical, medium-power ballast and PFC implementations where bipolar drive simplicity and predictable turn-off behavior are mandatory.

Availability

MJD18002D2T4G is available at Aetrix Electronics and suitable for electronic light ballast, active power factor correction, and high-voltage inductive switching applications requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for MJD18002D2T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The MJD18002D2T4G belongs to onsemi's high-voltage bipolar power transistor family designed specifically for timing-critical, high-reliability lighting and power conversion applications demanding tight dynamic parameter control and integrated protection features.

FAQ

What is the maximum continuous collector current rating for the MJD18002D2T4G?

The MJD18002D2T4G is rated for 2.0 Adc continuous collector current at case temperature T_C = 25°C. Derating applies above 25°C at 0.4 W/°C, and thermal design must account for R_JC = 5.0 °C/W to maintain junction temperature within −65°C to +150°C limits. Peak current capability is 5.0 A for pulse widths ≤5 ms at 10% duty cycle.

Does the MJD18002D2T4G include an integrated diode, and how is it configured?

Yes, the MJD18002D2T4G integrates a collector-emitter freewheeling diode. The diode anode connects internally to the emitter, and the cathode connects to the collector - enabling bidirectional current flow during inductive turn-off. Forward voltage is 1.0–1.5 V at I_EC = 1.0 A and 25°C, verified per datasheet Figure 10.

What is the guaranteed storage time (t_s) specification for the MJD18002D2T4G, and why is it important?

The MJD18002D2T4G guarantees storage time of 0.4–0.7 µs at 25°C (inductive load, I_C/I_B = 5). This tight ±150 ns lot-to-lot spread - enabled by the H2BIP structure - ensures consistent turn-off timing in high-frequency ballast circuits, directly impacting lamp ignition reliability and acoustic noise performance.

Can the MJD18002D2T4G be used in power factor correction (PFC) circuits, and what makes it suitable?

Yes, the MJD18002D2T4G is explicitly characterized for PFC applications. Its fully guaranteed dynamic V_CE(sat), integrated C–E diode, 450 V V_CEO, and low storage time enable efficient, reliable boost switching in universal-input (85–277 VAC) PFC stages up to ~150 W, with reduced external component count and predictable thermal behavior.

What package type and pin configuration does the MJD18002D2T4G use?

The MJD18002D2T4G uses the DPAK-3 (Case 369C, Style 1) surface-mount package with four terminals: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector). The exposed collector tab serves as thermal path and must be soldered to a large copper pour for optimal R_JC = 5.0 °C/W performance.

MJD18002D2T4G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 450 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 200mA, 1A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 6 @ 1A, 1V

Power - Max:: 50 W

Frequency - Transition:: 13MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

MJD18002D2T4G FAQ

1.How can I place an order for MJD18002D2T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD18002D2T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD18002D2T4G reliable?

The price and inventory of MJD18002D2T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD18002D2T4G is usually 5 days.

3.What payment methods are accepted for MJD18002D2T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD18002D2T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD18002D2T4G?

MJD18002D2T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD18002D2T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD18002D2T4G?

For technical support, including MJD18002D2T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD18002D2T4G requirements.

6.How does Aetrix verify that MJD18002D2T4G is sourced from the original manufacturer or authorized distributors?

All MJD18002D2T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD18002D2T4G meets industry standards.

7.What is the process for return or replacement of MJD18002D2T4G?

All MJD18002D2T4G units undergo pre-shipment inspection (PSI). If there is an issue with MJD18002D2T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD18002D2T4G part is unused and in its original packaging.

Return procedure for MJD18002D2T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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