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onsemi MJD200G
- Part No.:
- MJD200G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD200G.pdf
- Description:
- TRANS NPN 25V 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:762
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Product details
Overview
MJD200G from onsemi is an NPN silicon power transistor in DPAK (TO-252) package, rated for 5 A continuous collector current, 25 V collector-emitter voltage, and 12.5 W power dissipation at TC = 25 °C. It delivers high DC current gain (hFE = 70–180), low VCE(sat) (0.3–1.8 V), and 65 MHz fT, designed specifically for low-voltage, low-power audio amplifier stages and switching applications.
For engineers reviewing the MJD200G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal behavior under surface-mount conditions, DPAK terminal mapping, real-world use cases in audio and power control circuits, and validated alternative transistors with documented functional trade-offs.
Technical Context
The MJD200G operates as a medium-power NPN bipolar junction transistor optimized for linear amplification and switching in compact surface-mount designs. Its annular construction minimizes leakage, while Pb-free epoxy meets UL 94 V-0 flammability rating. Thermal resistance RJC = 10 °C/W enables efficient heat transfer to the PCB when mounted on minimum recommended pad sizes.
Electrical performance is specified across temperature (−65 to +150 °C) and includes guaranteed hFE down to IC = 5 A, VCE(sat) ≤ 1.8 V at IC/IB = 5, and Cob = 80 pF - all measured under defined test conditions (e.g., IC = 100 mA, VCE = 10 V, f = 10 MHz for fT).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 25 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration. |
| IC (continuous) | 5.0 A - Continuous collector current capability with proper heatsinking at TC = 25 °C. |
| PD @ TC = 25 °C | 12.5 W - Total power dissipation limit when case temperature is maintained at 25 °C. |
| hFE @ IC = 5 A | 10–180 - DC current gain range at full-rated current, critical for bias stability in amplifier output stages. |
| fT | 65 MHz - Current-gain-bandwidth product defining usable frequency limit for small-signal amplification. |
| VCE(sat) @ IC = 5 A | 1.8 V - Saturation voltage at full load, directly impacting conduction loss and thermal rise in switching operation. |
| RJA | 89.3 °C/W - Junction-to-ambient thermal resistance under surface-mount conditions on minimal copper pads. |
Pinout & Package
DPAK-3 (Case 369C, 6.10 × 6.54 × 2.28 mm) surface-mount package with exposed collector tab (pins 2 and 4 electrically connected). Lead-formed for automated placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires current-limited drive (IB ≤ 1.0 A) to achieve full saturation. |
| 2 & 4 | Collector | Power input node; electrically tied together and thermally connected to exposed copper tab for heat dissipation. |
| 3 | Emitter | Power return path; typically grounded or connected to low-impedance rail in common-emitter configurations. |
Key Features
| Feature | Design Value |
|---|---|
| High hFE at high current | hFE ≥ 10 at IC = 5 A ensures stable bias and reduced base drive requirements in Class AB audio outputs. |
| Low VCE(sat) | 0.3 V typical at IC = 500 mA reduces conduction loss and improves efficiency in switching regulators. |
| Annular die construction | Minimizes ICBO to ≤ 100 nA at 40 V, enhancing off-state leakage control in precision analog circuits. |
| Pb-free, RoHS-compliant | Meets global environmental compliance without derating; "G" suffix confirms lead-free packaging per J-STD-609. |
| AEC-Q101 not applicable | MJD200G is not automotive-qualified; NJV-prefixed variants (e.g., NJVMJD210T4G) are required for AEC-Q101 applications. |
Applications
| Audio Power Amplifier | DC Motor Driver Stage |
|---|---|
|
Use Scenario: Final output stage of a 5–12 V battery-powered portable audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch in complementary pair (with MJD210) delivering linear current amplification with low crossover distortion. Use Value: High hFE and low VCE(sat) enable >85% efficiency at 2–3 W output, minimizing thermal load on compact PCBs. |
Use Scenario: H-bridge half-bridge driver controlling bidirectional 12 V DC motors in robotics or actuator modules. IC Role / Device Role / Timing Role: High-current NPN switch turning motor supply on/off; paired with PNP complement for full bridge control. Use Value: 5 A continuous rating supports peak stall currents up to 10 A (ICM), while 65 MHz fT allows clean PWM edge response up to 20 kHz. |
| Linear Voltage Regulator Pass Element | LED Constant-Current Driver |
|
Use Scenario: Series pass transistor in adjustable 3–15 V, 1–3 A linear regulator for sensitive analog subsystems. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential voltage. Use Value: RJC = 10 °C/W enables direct mounting to thermal pad, sustaining 3 A at ΔV = 5 V with <40 °C junction rise above ambient. |
Use Scenario: Constant-current sink for high-brightness LED strings in signage or industrial lighting (12–24 V input). IC Role / Device Role / Timing Role: Current-regulating transistor operating in active mode with feedback resistor sensing emitter current. Use Value: Tight hFE tolerance (70–180) and low VBE(on) = 1.6 V ensure ±5% current accuracy across temperature without trimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD200T4G | Same die and specs; differs only in tape-and-reel packaging (2500 pcs/reel vs. 75 pcs/rail for MJD200G). | No functional difference; selected for high-volume SMT production requiring automated pick-and-place feeders. | Choose MJD200T4G for volume manufacturing; MJD200G remains valid for prototyping or low-quantity builds. |
| STN9360 | Higher VCEO = 40 V, lower hFE = 25–160, same DPAK package and 5 A rating; Cob = 100 pF. | Better suited for higher-voltage switching (e.g., 24 V industrial controls); slightly reduced small-signal gain bandwidth. | Select STN9360 when system bus voltage exceeds 25 V; retain MJD200G for cost-sensitive 12 V audio or motor control where gain linearity is prioritized. |
Compared with MJD200T4G, MJD200G offers identical electrical performance but different logistics form factor; versus STN9360, MJD200G trades higher voltage margin for superior hFE consistency and lower VCE(sat) at mid-current, making it preferable in low-distortion linear applications.
Availability
MJD200G is available at Aetrix Electronics and suitable for audio amplifier design, DC motor control, linear regulator implementation, and LED constant-current driver development requiring stable component supply despite its discontinued status.
Supply support for MJD200G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and consumer markets.
The MJD200G belongs to onsemi's legacy plastic power transistor family targeting cost-effective, surface-mountable discrete solutions for low-voltage analog and switching applications where thermal performance and gain stability are essential.
FAQ
Is MJD200G still in production?
No - the MJD200G was officially marked as discontinued by onsemi in January 2026 (Rev. 16 datasheet). However, Aetrix Electronics maintains active inventory and supports legacy design continuity through controlled allocation and traceable sourcing for qualified customers.
What is the maximum safe operating temperature for MJD200G?
The MJD200G has a junction temperature range of −65 °C to +150 °C. For reliable long-term operation, keep TJ ≤ 150 °C using thermal design that accounts for RJA = 89.3 °C/W (surface mount) or RJC = 10 °C/W (case-heatsink interface). Derate power linearly above 25 °C ambient.
Can MJD200G be used as a direct replacement for MJD200T4G?
Yes - MJD200G and MJD200T4G share identical electrical specifications, thermal characteristics, and DPAK mechanical footprint. The only difference is packaging format: MJD200G ships in 75-unit rails, while MJD200T4G uses 2500-unit tape-and-reel. No circuit or layout changes are needed.
Does MJD200G meet AEC-Q101 automotive qualification?
No - MJD200G is not AEC-Q101 qualified. The NJV-prefixed variant (e.g., NJVMJD210T4G) is the automotive-grade version. Use MJD200G only in commercial or industrial applications where automotive reliability standards are not mandated.
What is the safe operating area (SOA) limitation for MJD200G at DC operation?
At DC (single-pulse), the MJD200G SOA is limited by thermal constraints: maximum IC = 5 A at VCE ≤ 2.5 V, or VCE = 25 V at IC ≤ 0.5 A. Exceeding these boundaries risks second breakdown or thermal runaway; always consult Figure 9 in the official datasheet for pulse-duty cycle derating.
MJD200G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 25 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 45 @ 2A, 1V
- Power - Max:
- 1.4 W
- Frequency - Transition:
- 65MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD200G FAQ
1.How can I place an order for MJD200G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD200G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD200G reliable?
The price and inventory of MJD200G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD200G is usually 5 days.
3.What payment methods are accepted for MJD200G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD200G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD200G?
MJD200G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD200G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD200G?
For technical support, including MJD200G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD200G requirements.
6.How does Aetrix verify that MJD200G is sourced from the original manufacturer or authorized distributors?
All MJD200G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD200G meets industry standards.
7.What is the process for return or replacement of MJD200G?
All MJD200G units undergo pre-shipment inspection (PSI). If there is an issue with MJD200G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD200G part is unused and in its original packaging.
Return procedure for MJD200G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJD200G Tags
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MMBT3906LT1G
onsemi
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MMBT3906-7-F
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MMBT2222A-7-F
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.
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MMBTA06LT1G
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MMBT2222ALT1G
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