onsemi MJD200T4

Overview

MJD200T4 from onsemi is an NPN silicon power transistor in DPAK (TO-252) package, designed for low-voltage, low-power, high-gain audio amplifier stages and switching applications. It delivers 5 A continuous collector current, 25 V V_CEO, 12.5 W power dissipation at T_C = 25 °C, and DC current gain (h_FE) of 70–180 at I_C = 500 mA, supporting Class AB audio output stages in consumer and industrial amplifiers.

For engineers reviewing the MJD200T4 datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.5 V V_BE(sat) at I_C/I_B = 5, 0.3 V V_CE(sat) at low drive, 65 MHz f_T, thermal resistance R_JC = 10 °C/W, and AEC-Q101-compliant variants - all critical for thermally constrained surface-mount audio and power control designs.

Technical Context

The MJD200T4 operates as a medium-power NPN bipolar junction transistor optimized for linear amplification and saturated switching. Its annular construction minimizes leakage, while the DPAK package enables efficient heat transfer to PCB copper via the exposed collector tab (pins 2 and 4). The device supports I_C up to 5 A with V_CE(sat) ≤ 1.8 V at full load, enabling efficient operation in low-impedance driver circuits.

Electrical behavior is characterized by strong DC current gain linearity across 100 mA–5 A, with h_FE ≥ 45 at I_C = 2 A and ≥10 at I_C = 5 A. Its 65 MHz current-gain-bandwidth product and low Cob (80 pF) support stable mid-frequency response in audio pre-driver and relay driver topologies without oscillation risk.

Key Specifications

Pinout & Package

DPAK (TO-252) plastic surface-mount package with exposed collector tab (pins 2 and 4), 6.10 × 6.54 × 2.28 mm footprint, UL 94 V-0 rated epoxy, Pb-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD200RLG, MJD200T4 offers identical performance with larger reel quantity for automated placement efficiency; versus STN2640, MJD200T4 provides superior h_FE and thermal resistance for low-voltage, high-gain linear applications - making it the preferred choice for audio output and precision pass-element roles.

Availability

MJD200T4 is available at Aetrix Electronics and suitable for audio amplifier output stages, DC motor drivers, relay interface circuits, and linear voltage regulator pass elements requiring stable component supply and long-term manufacturability.

Supply support for MJD200T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and consumer markets.

The MJD200T4 belongs to onsemi's complementary plastic power transistor family, engineered specifically for low-voltage, high-gain audio amplification and robust switching in surface-mount applications - emphasizing thermal reliability, gain consistency, and Pb-free compliance.

FAQ

What is the maximum continuous collector current rating for the MJD200T4?

The MJD200T4 has a maximum continuous collector current (I_C) rating of 5.0 A at case temperature T_C = 25 °C. Derating applies above 25 °C at 0.1 W/°C. This rating assumes proper PCB copper area for thermal conduction from the exposed collector tab (pins 2 and 4), as specified in the datasheet's minimum pad size recommendations. The MJD200T4 maintains this current capability under linear or saturated operation when thermal limits are observed.

Is the MJD200T4 RoHS compliant and lead-free?

Yes, the MJD200T4 is RoHS compliant and Pb-free, as confirmed by its "G" suffix and explicit statement in the onsemi datasheet: "These Devices are Pb-Free and are RoHS Compliant." The epoxy meets UL 94 V-0 flammability rating at 0.125 inch thickness. The marking "J2x0G" on the device body indicates Pb-free packaging, and the ordering information confirms DPAK packaging with Pb-Free designation.

What is the pin configuration of the MJD200T4 in the DPAK package?

The MJD200T4 uses Style 1 pinout for DPAK-3: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (redundant collector connection). Pins 2 and 4 are internally and externally connected to the same collector node and the exposed metal tab - both must be soldered to the same PCB net for optimal thermal and electrical performance. This dual-collector layout lowers thermal resistance and improves current handling.

Does the MJD200T4 have automotive qualification?

The base MJD200T4 is not AEC-Q101 qualified; however, onsemi offers the NJVMJD210T4G (PNP complement) with AEC-Q101 qualification and PPAP capability. While the MJD200T4 shares the same die and package construction, its datasheet does not list AEC-Q101 certification. For automotive applications requiring qualification, designers should verify with onsemi whether a qualified variant of MJD200T4 exists or consider using the NJV-series PNP paired with a qualified NPN alternative.

What is the typical V_CE(sat) of the MJD200T4 at full rated current?

The typical V_CE(sat) of the MJD200T4 is 1.8 V at I_C = 5 A and I_B = 1 A, per the Electrical Characteristics table. At lower currents, it drops to 0.75 V at I_C = 2 A/I_B = 200 mA and 0.3 V at I_C = 500 mA/I_B = 50 mA. These values reflect actual measured saturation voltages under pulsed test conditions (300 µs pulse width, 2% duty cycle), directly impacting conduction loss and thermal design in switching applications.