onsemi MJD210G

Overview

MJD210G from onsemi is a PNP silicon power transistor in DPAK (TO-252) surface-mount package, rated for 25 V V_CEO, 5 A continuous collector current, and 12.5 W power dissipation at T_C = 25 °C. It delivers high DC current gain (h_FE ≥ 70 at I_C = 500 mA), low V_CE(sat) (≤ 0.3 V), and 65 MHz f_T, targeting low-voltage audio amplifier output stages and linear regulator pass elements.

For engineers reviewing the MJD210G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating curves, safe operating area limits, junction-to-case thermal resistance (10 °C/W), and validated alternatives for complementary PNP switching and amplification in industrial and consumer power circuits.

Technical Context

The MJD210G operates as a medium-power PNP bipolar junction transistor with annular construction to minimize leakage and supports linear-mode operation up to 150 °C junction temperature. Its design emphasizes high h_FE stability across I_C = 0.05–5 A and low saturation voltage under forced β = 10 conditions (V_CE(sat) ≤ 1.8 V at I_C = 5 A, I_B = 1 A).

Thermal performance is defined by R_JC = 10 °C/W and R_JA = 89.3 °C/W when mounted on minimum recommended PCB pads. Safe operating area (SOA) is bounded by second breakdown (pulse) and thermal limits, with peak power handling dependent on duty cycle and case temperature per Figure 8 and Figure 9.

Key Specifications

Pinout & Package

Package: DPAK (TO-252), Case 369C, 6.10 mm × 6.54 mm × 2.28 mm body with exposed drain pad (pin 2 and 4 are internally connected collectors). Lead-free, RoHS-compliant, UL 94 V-0 rated epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD210G, MJD210RLG offers identical electrical and thermal performance in a different packaging format ideal for volume manufacturing, while ZTX951 trades current capacity and thermal robustness for higher voltage rating and smaller footprint-making it unsuitable as a drop-in replacement but viable for low-power, high-V_CEO roles.

Availability

MJD210G is available at Aetrix Electronics and suitable for audio amplifier output stages, linear voltage regulator pass elements, DC motor driver half-bridges, and high-side switches requiring stable component supply and Pb-free compliance.

Supply support for MJD210G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJD210G belongs to onsemi's complementary plastic power transistor family designed specifically for low-voltage, low-power, high-gain audio amplifier applications and general-purpose linear/switching power control.

FAQ

What is the maximum continuous collector current rating for the MJD210G?

The MJD210G has a maximum continuous collector current (I_C) rating of 5.0 A at case temperature T_C = 25 °C. Derating applies above 25 °C at 0.1 W/°C. At elevated case temperatures, actual usable current must be limited to ensure junction temperature remains ≤ 150 °C, as defined by its R_JC = 10 °C/W thermal resistance. The MJD210G also supports 10 A peak collector current under pulsed conditions.

Is the MJD210G pin-compatible with the NPN MJD200G?

Yes, the MJD210G is complementary to the MJD200G in both electrical characteristics and physical layout: both use identical DPAK (TO-252) packages with pin 1 = Base, pins 2 & 4 = Collector, and pin 3 = Emitter. However, polarity differs-MJD210G is PNP (current sourced from emitter), while MJD200G is NPN (current sunk to emitter)-so circuit topology must be mirrored in push-pull or complementary amplifier designs. The MJD210G shares the same footprint and thermal pad configuration as the MJD200G.

Does the MJD210G meet automotive qualification standards?

The standard MJD210G is not AEC-Q101 qualified. However, onsemi offers the NJVMJD210T4G variant-identical electrically and mechanically-which carries AEC-Q101 qualification and PPAP capability for automotive applications. This variant uses the same DPAK package and features identical maximum ratings, h_FE, V_CE(sat), and thermal characteristics as the MJD210G, with added process controls and traceability required for automotive supply chains.

What is the safe operating area (SOA) limitation for the MJD210G at DC operation?

At DC (single-pulse, 100% duty cycle), the MJD210G's SOA is thermally limited: maximum allowable power dissipation is 12.5 W at T_C = 25 °C, decreasing linearly to zero at T_C = 150 °C. For example, at T_C = 100 °C, max DC power drops to 5 W. Second breakdown does not constrain DC operation-the SOA curve in Figure 9 confirms thermal limits dominate below 10 ms pulses. The MJD210G must be mounted on adequate copper area or heatsink to sustain rated current without exceeding T_J = 150 °C.

Can the MJD210G be used in switching applications above 100 kHz?

The MJD210G has an f_T of 65 MHz and exhibits usable switching performance up to ~20 kHz for hard-switched applications due to stored charge and minority-carrier limitations. Above 100 kHz, switching losses increase significantly, and rise/fall times degrade-measured t_r/t_f exceed 100 ns at I_C = 2 A. For >100 kHz switching, MOSFETs or RF-optimized BJTs are preferred. The MJD210G remains appropriate for PWM motor control, audio amplification, and linear regulation where bandwidth demands stay below 20 kHz.