onsemi MJD210RL

Overview

MJD210RL from onsemi is a PNP silicon power transistor in DPAK (TO-252) package, rated for 5 A continuous collector current, 25 V collector-emitter voltage, and 12.5 W power dissipation at T_C = 25 °C. It delivers high DC current gain (h_FE ≥ 10 at I_C = 5 A), low V_CE(sat) (1.8 V max), and 65 MHz f_T, designed specifically for low-voltage, low-power, high-gain audio amplifier stages and linear regulator pass elements.

For engineers reviewing the MJD210RL datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, surface-mount DPAK thermal performance (R_JC = 10 °C/W), safe operating area under pulse conditions, and AEC-Q101 qualification status for automotive-grade reliability validation.

Technical Context

The MJD210RL operates as a complementary PNP counterpart to the NPN MJD200, sharing identical DPAK-3 mechanical construction and thermal design. Its annular silicon structure ensures low leakage (I_CBO ≤ 100 nA at 40 V), while the Pb-free, RoHS-compliant epoxy meets UL 94 V-0 flammability rating at 3.18 mm thickness.

Electrical behavior is defined by three distinct h_FE test points (70 min at 500 mA, 45 min at 2 A, 10 min at 5 A) and saturation characteristics validated under pulsed conditions (300 µs, 2% duty cycle). The device exhibits Cob = 120 pF at V_CB = 10 V, supporting stable operation in audio-frequency switching and linear amplification circuits.

Key Specifications

Pinout & Package

DPAK-3 (Case 369C) surface-mount package with exposed collector tab for thermal conduction; dimensions 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm. Pin 1 = Base, Pins 2 & 4 = Collector (common), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MMBT2907ALT1G and PN2907A, the MJD210RL provides 25× higher power handling, surface-mount thermal scalability via DPAK, and automotive-grade qualification-making it uniquely suited for production-grade power amplification and regulated supply designs requiring >1 W continuous dissipation.

Availability

MJD210RL is available at Aetrix Electronics and suitable for audio amplifier stages, linear voltage regulator pass elements, and automotive interior lighting drivers requiring stable component supply and long-term manufacturability.

Supply support for MJD210RL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The MJD210RL belongs to onsemi's complementary plastic power transistor family, engineered for low-voltage, high-gain linear and switching applications where thermal robustness and reliability under sustained current stress are critical.

FAQ

What is the maximum continuous collector current rating for MJD210RL?

The MJD210RL is rated for 5.0 Adc continuous collector current at case temperature T_C = 25 °C. Derating applies above this temperature at 0.1 W/°C, and operation must remain within the Safe Operating Area (SOA) curve shown in Figure 9 of the datasheet to prevent second breakdown or thermal runaway. The MJD210RL achieves this rating using its DPAK package's low R_JC of 10 °C/W.

Is MJD210RL pin-compatible with MJD200?

No-MJD210RL is a PNP transistor while MJD200 is NPN; they share identical DPAK-3 pinout (Pin 1 = Base, Pins 2 & 4 = Collector, Pin 3 = Emitter) but opposite polarity. This allows complementary use in push-pull circuits, but direct substitution would reverse circuit functionality. The MJD210RL pinout matches only other PNP devices in the same DPAK footprint, such as NJVMJD210T4G.

Does MJD210RL meet automotive reliability standards?

The MJD210RL itself is not AEC-Q101 qualified; however, the NJVMJD210T4G variant-identical in electrical and thermal specifications-is explicitly AEC-Q101 qualified and PPAP capable. For automotive production, engineers should specify NJVMJD210T4G; the MJD210RL remains suitable for industrial and consumer applications where automotive certification is not required.

What is the typical DC current gain (h_FE) of MJD210RL at 5 A collector current?

At I_C = 5 A, V_CE = 2 V, and T_C = 25 °C, the MJD210RL guarantees h_FE ≥ 10 (minimum), with typical values ranging from 25 to 60. This gain level supports stable base drive in high-current linear applications without requiring Darlington configuration, and is confirmed in the Electrical Characteristics table on page 2 of the datasheet.

Can MJD210RL be used in switching applications above 100 kHz?

The MJD210RL has an f_T of 65 MHz and measured switching times (t_on/t_off) in the tens-of-nanoseconds range, but its Cob = 120 pF and relatively high stored charge limit practical hard-switching efficiency above ~100 kHz. It is best applied in audio-frequency switching (e.g., LED dimming up to 20 kHz) or linear-mode operation; for >200 kHz SMPS, MOSFETs or RF-optimized BJTs are preferred over the MJD210RL.