onsemi MJD210T4

Overview

MJD210T4 from onsemi is a PNP silicon power transistor in DPAK (TO-252) package, rated for 5 A continuous collector current, 25 V collector-emitter voltage, and 12.5 W power dissipation at T_C = 25 °C. It delivers high DC current gain (h_FE ≥ 70 at I_C = 500 mA), low V_CE(sat) (≤ 0.3 V), and f_T = 65 MHz, designed specifically for low-voltage, low-power, high-gain audio amplifier stages.

For engineers reviewing the MJD210T4 datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, Pb-free DPAK surface-mount construction, thermal resistance R_JC = 10 °C/W, and verified performance under I_C/I_B = 10 switching conditions per Figure 2–4.

Technical Context

The MJD210T4 operates as a medium-power PNP bipolar junction transistor with annular construction to minimize leakage and supports linear amplification and switching in complementary pair configurations with the NPN MJD200 series. Its safe operating area (SOA) is defined by second-breakdown limits up to 500 µs pulses and thermally limited operation at T_C ≤ 150 °C.

Electrical behavior is characterized across temperature (−65 to +150 °C), with V_BE(sat) ≤ 2.5 V at I_C = 5 A/I_B = 1 A, C_ob = 120 pF at V_CB = 10 V, and ESD robustness rated Class 3B (HBM). The device meets UL 94 V-0 flammability standard and is qualified to AEC-Q101 for automotive applications.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab (pin 2 and 4 tied internally to collector); 6.10 mm × 6.54 mm footprint, 2.28 mm height, 2.29 mm lead pitch. Thermal pad on underside enhances heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD210T4, MJD210RLG offers identical performance in a smaller reel format ideal for pilot runs, while ZTX753 trades automotive reliability and power capability for higher gain in low-power through-hole designs - neither is pin-compatible nor drop-in.

Availability

MJD210T4 is available at Aetrix Electronics and suitable for audio amplifier output stages, automotive door module drivers, and industrial sensor signal conditioning requiring stable component supply, AEC-Q101 compliance, and DPAK surface-mount compatibility.

Supply support for MJD210T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJD210T4 belongs to onsemi's complementary plastic power transistor family targeting low-voltage, high-gain audio and general-purpose linear/switching applications - engineered for manufacturability, thermal performance, and automotive-grade reliability.

FAQ

What is the maximum junction temperature rating for the MJD210T4?

The MJD210T4 has an operating junction temperature range of −65 °C to +150 °C. This rating is confirmed in the Maximum Ratings table on page 1 of the official datasheet (Rev. 16, Jan 2026). The device must be operated within this range to maintain specified electrical characteristics and long-term reliability. Derating of power dissipation begins above 25 °C case temperature per the thermal curves in Figure 1.

Is the MJD210T4 pin-compatible with the NPN MJD200 series?

No, the MJD210T4 is not pin-compatible with the MJD200 series despite sharing the same DPAK package outline. The MJD210T4 (PNP) uses pin 1 = Base, pins 2 & 4 = Collector, pin 3 = Emitter; the MJD200 (NPN) uses pin 1 = Base, pins 2 & 4 = Collector, pin 3 = Emitter - same pinout but opposite polarity. Physical layout matches, but circuit connection logic is inverted due to PNP vs. NPN topology.

Does the MJD210T4 meet automotive qualification standards?

Yes - the NJVMJD210T4G variant (explicitly referenced in the ordering table) is AEC-Q101 qualified and PPAP capable. This qualification covers stress tests including HTGB, HTRB, temperature cycling, and ESD (HBM Class 3B). Standard MJD210T4G parts may not carry the NJV prefix and thus lack formal automotive certification unless ordered as NJVMJD210T4G.

What is the typical output capacitance (C_ob) of the MJD210T4 at 10 V?

The MJD210T4 has a typical output capacitance (C_ob) of 120 pF measured at V_CB = 10 Vdc, IE = 0, and f = 0.1 MHz, as specified in the Electrical Characteristics table on page 2 of the datasheet. This value directly impacts high-frequency response in amplifier feedback networks and switching speed in PWM-driven applications.

Can the MJD210T4 be used in linear regulator applications?

Yes - the MJD210T4 is suitable for linear regulator pass transistor roles due to its 5 A continuous current rating, low V_CE(sat), and 12.5 W power dissipation capability at T_C = 25 °C. Its high h_FE simplifies base drive design, and the DPAK package allows direct PCB copper heatsinking. Thermal design must respect R_JA = 89.3 °C/W for ambient-mounted operation.