onsemi MJD210TF

Overview

MJD210TF from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon power transistor in D-PAK (TO-252) package, rated for −25 V V_CEO, −5 A DC collector current, and 12.5 W case power dissipation at T_C = 25°C; used in linear regulators, motor drivers, and high-current switching circuits.

For engineers reviewing the MJD210TF datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE ≥ 45 at I_C = −2 A, V_CE(sat) ≤ −0.75 V under same conditions, thermal derating above 25°C, and surface-mount compatibility with tape-and-reel delivery.

Technical Context

The MJD210TF operates as a medium-power PNP bipolar junction transistor optimized for linear and switching applications where low saturation voltage and stable DC gain are critical. It features a monolithic epitaxial base structure enabling predictable h_FE across I_C = −0.5 A to −5 A and V_CE ≥ −2 V.

Its safe operating area (SOA) is defined up to 5 ms pulse width with V_CC = −30 V and supports robust turn-off behavior (t_F ≤ 100 ns typical at I_C = −2 A), making it suitable for inductive load control without external snubbing in many designs.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad (collector tab) for thermal enhancement; 3-terminal configuration with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD210G and PN3565, the MJD210TF delivers unique combination of −5 A DC current, 12.5 W thermal capability, and surface-mount D-PAK packaging-making it irreplaceable in medium-power linear and switching roles where both current and thermal performance are simultaneously critical.

Availability

MJD210TF is available at Aetrix Electronics and suitable for linear regulators, motor drivers, and LED current sources requiring stable component supply and long-term industrial availability.

Supply support for MJD210TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (acquired Fairchild in 2016) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud computing, and IoT applications.

The MJD210TF belongs to Fairchild's legacy discrete power transistor family, designed specifically for robust, cost-effective medium-power analog and switching circuits in industrial controls and power management systems.

FAQ

What is the maximum continuous collector current rating for the MJD210TF?

The MJD210TF is rated for −5 A DC collector current at case temperature T_C = 25°C with adequate heatsinking. Derating applies above 25°C per the published power derating curve-e.g., ~100 mW/°C reduction beyond 25°C. This rating assumes proper PCB copper area and thermal vias under the exposed collector tab to maintain T_C.

Does the MJD210TF have a documented safe operating area (SOA) for pulsed operation?

Yes, the MJD210TF datasheet includes a detailed SOA graph (Figure 6) specifying limits for pulse widths from 10 µs to 5 ms at V_CC = −30 V. At 1 ms, the device supports up to −3.5 A with V_CE = −20 V; this enables reliable use in inductive switching without snubbers in many motor and relay driver designs.

What is the pin configuration of the MJD210TF in its D-PAK package?

The MJD210TF uses standard D-PAK (TO-252) pinout: Pin 1 = Base, Pin 2 = Collector (connected to exposed metal tab), Pin 3 = Emitter. This matches JEDEC TO-252 outline and is verified in Fairchild's package drawings and application schematics for MJD210-series transistors.

How does the DC current gain (h_FE) of the MJD210TF vary with collector current?

The MJD210TF exhibits h_FE = 70–180 at I_C = −500 mA, 45–180 at I_C = −2 A, and 10–180 at I_C = −5 A (all at V_CE = −1 V). The minimum guaranteed h_FE drops with increasing current, so base drive must be sized for h_FE = 45 at I_C = −2 A to ensure saturation in switching applications.

Is the MJD210TF suitable for use in automotive applications?

The MJD210TF is not AEC-Q101 qualified and lacks automotive-grade screening or extended temperature validation. While its 150°C T_J and −65°C to +150°C T_STG range meet basic environmental extremes, it is intended for industrial and commercial equipment-not safety-critical or mission-reliability automotive subsystems per Fairchild's original product status definition.