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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD253-1G

Name: MJD253-1G
Brand: onsemi
SKU: MJD253-1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD253-1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: MJD253-1G.pdf

Description:: TRANS PNP 100V 4A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJD253-1G from onsemi is a PNP silicon power transistor in IPAK (CASE 369D) package, rated for 100 V_CEO, 4.0 A continuous collector current, and 12.5 W dissipation at T_C = 25 °C, designed for low-voltage, low-power, high-gain audio amplifier stages and linear regulator pass elements.

For engineers reviewing the MJD253-1G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal derating behavior, complementary pairing with MJD243, surface-mount mechanical layout guidance, and validated alternative options for audio and power control circuits.

Technical Context

The MJD253-1G operates as a medium-power PNP bipolar junction transistor with annular construction to minimize leakage and achieve V_CEO = 100 V and V_CB = 100 V ratings. Its DC current gain (h_FE) ranges from 15 to 180 at I_C = 1.0 A and V_CE = 1.0 V, supporting stable biasing in Class-A and AB amplifier topologies.

It features low V_CE(sat) of 0.6 V max at I_C = 1.0 A / I_B = 100 mA and f_T = 40 MHz, enabling use in both linear amplification and moderate-speed switching applications up to ~100 kHz. Thermal resistance R_JC is 10 °C/W, requiring heatsinking for sustained >1 W operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Maximum safe collector-emitter voltage before breakdown; supports rail voltages up to ±48 V in dual-supply audio designs.
I_C (continuous)	4.0 A - Continuous collector current capability; enables driver-stage operation for 10–20 W audio loads with adequate heatsinking.
P_D @ T_C = 25 °C	12.5 W - Junction-to-case power dissipation limit; requires thermal interface and heatsink for >2 W average output.
h_FE	15–180 - Wide DC current gain range at I_C = 1.0 A / V_CE = 1.0 V; allows flexible bias network design with predictable gain stability.
V_CE(sat)	0.6 V max at I_C = 1.0 A / I_B = 100 mA - Low saturation voltage reduces conduction loss in linear regulators and emitter-follower buffers.
f_T	40 MHz - Current-gain bandwidth product; ensures sufficient gain margin for feedback-stable audio amplifiers up to 20 kHz.
R_JC	10 °C/W - Junction-to-case thermal resistance; mandates direct metal contact between tab and heatsink for thermal management.

Pinout & Package

IPAK (CASE 369D) package with exposed collector tab for thermal and electrical connection; 4-pin outline (pins 1–4), straight-lead configuration per "−1" suffix; RoHS-compliant, Pb-free, UL 94 V-0 epoxy.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires current-limited drive (I_B ≤ 1.0 A) to avoid secondary breakdown during saturation.
2 & 4	Collector	Electrically connected terminals forming main power path; mounted to heatsink via exposed metal tab for thermal conduction and EMI shielding.
3	Emitter	Reference node for output stage; connects to load or supply rail depending on circuit topology (e.g., emitter-follower or common-emitter).

Key Features

Feature	Design Value
High DC current gain	h_FE ≥ 15 at I_C = 1.0 A - Enables low-base-drive designs in discrete power amplifiers without additional pre-driver stages.
Low V_CE(sat)	0.6 V max at I_C = 1.0 A - Reduces power loss and thermal stress in linear regulator pass devices and Class-A output stages.
Annular construction	Leakage < 100 nA at V_CB = 100 V - Ensures stable quiescent current in high-impedance bias networks over temperature.
Thermal performance	R_JC = 10 °C/W - Allows predictable junction temperature estimation when mounted to standard aluminum heatsinks with thermal paste.
AEC-Q101 qualified option	NJVMJD253T4G variant available - Supports automotive infotainment amplifier modules requiring PPAP documentation and extended temperature validation.

Applications

Audio Power Amplifier Stage	Linear Voltage Regulator Pass Element
Use Scenario: Final output stage in 5–15 W Class-AB audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: PNP complement to NPN MJD243 in push-pull emitter-follower configuration; handles negative half-cycle current delivery. Use Value: High h_FE and low V_CE(sat) reduce crossover distortion and improve efficiency versus lower-gain alternatives.	Use Scenario: Series pass transistor in adjustable 3–30 V, 1–3 A linear regulator with external error amplifier. IC Role / Device Role / Timing Role: Power control element regulating output voltage by dissipating excess input-output differential as heat. Use Value: 12.5 W T_C-rated dissipation and 100 V V_CEO support wide-input industrial supplies with margin for transients.
DC Motor Speed Controller	Discrete Signal Inverter
Use Scenario: Low-frequency PWM-driven H-bridge half-bridge leg controlling brushed DC motor direction/speed. IC Role / Device Role / Timing Role: High-side PNP switch in complementary pair with NPN; conducts motor current during active-low drive phase. Use Value: 4.0 A I_C rating and 40 MHz f_T enable clean turn-off response at 1–5 kHz PWM frequencies without excessive storage time.	Use Scenario: Single-ended logic-level inverter in analog signal conditioning or level-shifting circuits where CMOS is unsuitable. IC Role / Device Role / Timing Role: Saturated switch converting TTL/CMOS logic signals into inverted, current-sourced outputs for LED drivers or relay coils. Use Value: Verified V_BE(on) ≤ 1.5 V and V_CE(sat) ≤ 0.6 V ensure reliable saturation with standard 5 V microcontroller GPIO drive.

Audio Power Amplifier Stage

Linear Voltage Regulator Pass Element

Use Scenario: Final output stage in 5–15 W Class-AB audio amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP complement to NPN MJD243 in push-pull emitter-follower configuration; handles negative half-cycle current delivery.

Use Value: High h_FE and low V_CE(sat) reduce crossover distortion and improve efficiency versus lower-gain alternatives.

Use Scenario: Series pass transistor in adjustable 3–30 V, 1–3 A linear regulator with external error amplifier.

IC Role / Device Role / Timing Role: Power control element regulating output voltage by dissipating excess input-output differential as heat.

Use Value: 12.5 W T_C-rated dissipation and 100 V V_CEO support wide-input industrial supplies with margin for transients.

DC Motor Speed Controller

Discrete Signal Inverter

Use Scenario: Low-frequency PWM-driven H-bridge half-bridge leg controlling brushed DC motor direction/speed.

IC Role / Device Role / Timing Role: High-side PNP switch in complementary pair with NPN; conducts motor current during active-low drive phase.

Use Value: 4.0 A I_C rating and 40 MHz f_T enable clean turn-off response at 1–5 kHz PWM frequencies without excessive storage time.

Use Scenario: Single-ended logic-level inverter in analog signal conditioning or level-shifting circuits where CMOS is unsuitable.

IC Role / Device Role / Timing Role: Saturated switch converting TTL/CMOS logic signals into inverted, current-sourced outputs for LED drivers or relay coils.

Use Value: Verified V_BE(on) ≤ 1.5 V and V_CE(sat) ≤ 0.6 V ensure reliable saturation with standard 5 V microcontroller GPIO drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD253T4G	DPAK-3 (CASE 369C) package; same electrical specs but surface-mount tape-and-reel format; no straight leads.	Designed for automated pick-and-place assembly; lacks through-hole compatibility of MJD253-1G's IPAK straight-lead form factor.	Select MJD253T4G for volume SMT production; choose MJD253-1G for prototyping, manual assembly, or legacy board layouts requiring IPAK lead geometry.
BD240C	Lower V_CEO = 80 V; h_FE = 40–250 at I_C = 0.5 A; TO-126 package; not AEC-Q101 qualified.	Suitable for ≤±36 V supplies; less thermal margin than MJD253-1G due to higher R_JA and lower P_D.	Use BD240C only in cost-sensitive, non-automotive applications where 100 V rating and IPAK thermal performance are not required.

Compared with MJD253T4G, the MJD253-1G offers mechanical compatibility with through-hole or mixed-technology boards via its straight-lead IPAK package, while BD240C trades voltage headroom and thermal capability for lower cost and wider h_FE spread in legacy TO-126 designs.

Availability

MJD253-1G is available at Aetrix Electronics and suitable for audio amplifier development, linear regulator design, and DC motor control applications requiring stable component supply and legacy-compatible packaging.

Supply support for MJD253-1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and consumer markets.

The MJD253-1G belongs to onsemi's complementary plastic power transistor family, engineered for robust, high-gain linear operation in audio and power control systems where reliability under thermal stress is critical.

FAQ

What is the maximum continuous collector current rating for MJD253-1G?

The MJD253-1G is rated for 4.0 A continuous collector current (I_C) at case temperature T_C = 25 °C. Derating applies above 25 °C at 0.1 W/°C, limiting usable current in unheatsunk or high-ambient environments. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature below 150 °C.

Is MJD253-1G pin-compatible with MJD243 series transistors?

No - MJD253-1G (PNP) and MJD243 (NPN) share identical IPAK pinout (pin 1 = base, pins 2 & 4 = collector, pin 3 = emitter), but they are complementary-not pin-compatible-devices. They are intended for paired use in push-pull or complementary symmetry circuits, not direct substitution.

Does MJD253-1G support automotive-grade qualification?

The MJD253-1G itself is not AEC-Q101 qualified; however, the functionally identical NJVMJD253T4G variant carries AEC-Q101 qualification and PPAP capability. For automotive applications, engineers must specify the NJV prefix version and confirm compliance documentation with onsemi or authorized distributors.

What is the thermal resistance junction-to-case (R_JC) for MJD253-1G?

The MJD253-1G has a maximum junction-to-case thermal resistance (R_JC) of 10 °C/W, measured from die junction to the metal tab surface. Effective thermal management requires low-thermal-resistance mounting (e.g., thermal paste + aluminum heatsink) to keep T_J within −65 °C to +150 °C limits during operation.

Can MJD253-1G be used in switching applications?

Yes - the MJD253-1G supports moderate-speed switching with t_on ≈ 20 ns and t_off ≈ 100 ns (per datasheet Figure 9), and f_T = 40 MHz. It is suitable for PWM-based motor control and power supply regulation up to ~100 kHz, provided base drive is optimized to minimize storage time and secondary breakdown risk.

MJD253-1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 200mA, 1V

Power - Max:: 1.4 W

Frequency - Transition:: 40MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

MJD253-1G FAQ

1.How can I place an order for MJD253-1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD253-1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD253-1G reliable?

The price and inventory of MJD253-1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD253-1G is usually 5 days.

3.What payment methods are accepted for MJD253-1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD253-1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD253-1G?

MJD253-1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD253-1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD253-1G?

For technical support, including MJD253-1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD253-1G requirements.

6.How does Aetrix verify that MJD253-1G is sourced from the original manufacturer or authorized distributors?

All MJD253-1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD253-1G meets industry standards.

7.What is the process for return or replacement of MJD253-1G?

All MJD253-1G units undergo pre-shipment inspection (PSI). If there is an issue with MJD253-1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD253-1G part is unused and in its original packaging.

Return procedure for MJD253-1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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