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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD2955T4

Name: MJD2955T4
Brand: onsemi
SKU: MJD2955T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD2955T4

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: MJD2955T4.pdf

Description:: TRANS PNP 60V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJD2955T4 from STMicroelectronics is a complementary PNP power transistor in TO-252 (DPAK) surface-mount package, rated for V_CEO = –60 V, I_C = –10 A, and P_tot = 20 W at T_c = 25 °C; used in high-current linear regulators, audio output stages, and DC motor drive half-bridges.

For engineers reviewing the MJD2955T4 datasheet, MJD2955T4 pinout, MJD2955T4 application, or MJD2955T4 equivalent, key selection criteria include guaranteed h_FE ≥ 20 at I_C = –4 A, V_CE(sat) ≤ –1.1 V at I_C = –4 A / I_B = –0.4 A, negative polarity handling, and thermal resistance R_thj-case = 6.25 °C/W.

Technical Context

The MJD2955T4 is a silicon PNP bipolar junction transistor fabricated with epitaxial base technology to optimize cost-performance trade-offs in medium-power switching and analog amplification. It operates with reverse-polarity voltage ratings and current flow directionality consistent with PNP topology.

Its safe operating area (SOA) is defined up to 300 µs pulse width and 1.5% duty cycle, supporting pulsed load switching. Thermal derating begins above T_c = 25 °C at 160 mW/°C, based on R_thj-case = 6.25 °C/W and R_thj-amb = 100 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–60 V: Maximum collector-emitter voltage before breakdown under open-base condition; defines maximum supply rail compatibility in PNP switch configurations.
I_C	–10 A: Continuous collector current rating at T_c = 25 °C; sets peak load capability in motor drivers and power supplies.
P_tot	20 W: Total power dissipation at case temperature 25 °C; determines heatsink sizing requirement for sustained operation.
h_FE	20–100: DC current gain at I_C = –4 A, V_CE = –4 V; enables predictable base drive design for saturation control.
V_CE(sat)	–1.1 V (typ.) at I_C = –4 A / I_B = –0.4 A: Low saturation voltage minimizes conduction loss in switching applications.
f_T	2 MHz: Transition frequency at I_C = –0.5 A, V_CE = –10 V; supports audio-frequency amplification and moderate-speed switching.
R_thj-case	6.25 °C/W: Junction-to-case thermal resistance; allows direct calculation of ΔT_j-c = P × 6.25 for thermal margining.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-ended heat slug (pin 2 is collector tab). Dimensions per STMicroelectronics mechanical drawing P032P_B.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	Current exit point for PNP device; connects to positive rail in high-side switch configuration.
2 (Collector)	Collector terminal / Heat slug	Main current sink and primary thermal path; electrically connected to metal tab for heatsinking.
3 (Base)	Base control terminal	Current-controlled input; requires negative base current relative to emitter to turn on device.

Key Features

Feature	Design Value
Complementary pairing	Matched with NPN MJD3055T4 for push-pull and H-bridge designs without cross-conduction risk.
Epitaxial base process	Enables tighter parameter distribution and improved f_T consistency versus diffused-base alternatives.
Pulsed SOA compliance	Rated for 300 µs pulses at 1.5% duty cycle-supports inductive load switching with controlled energy dissipation.
Negative polarity operation	Supports high-side switching topologies where emitter ties to V_CC, simplifying gate/base drive in legacy power systems.
TO-252 thermal performance	R_thj-case = 6.25 °C/W enables >12 W continuous dissipation with modest heatsinking-superior to TO-220 in space-constrained layouts.

Applications

Audio Power Amplifier Output Stage

Linear Voltage Regulator Pass Element

Use Scenario: Class-AB audio amplifier output stage delivering ±15 V rails into 4 Ω loads.

IC Role / Device Role / Timing Role: PNP output transistor conducting during negative half-cycle; complements NPN MJD3055T4.

Use Value: V_CE(sat) ≤ –1.1 V ensures <1.5 W conduction loss per device at 4 A peak, preserving thermal headroom.

Use Scenario: Adjustable high-current linear regulator (e.g., LM317-based) sourcing up to 8 A at 5–24 V.

IC Role / Device Role / Timing Role: External pass transistor augmenting IC current capability; emitter-follower configuration.

Use Value: h_FE ≥ 20 at 4 A enables stable regulation with minimal base drive error across load range.

DC Motor Half-Bridge Driver

High-Side Switch in Industrial PLC Output

Use Scenario: Unidirectional 24 V DC motor control using single-PNP high-side switch with freewheeling diode.

IC Role / Device Role / Timing Role: High-side switching element controlling motor enable/disable via base current modulation.

Use Value: V_CEO = –60 V provides 150% overvoltage margin against 24 V supply transients and inductive kickback.

Use Scenario: 24 V industrial PLC digital output driving solenoids and relays with galvanic isolation.

IC Role / Device Role / Timing Role: High-side switch interfacing microcontroller GPIO through level-shifting driver.

Use Value: TO-252 package allows automated SMT assembly while maintaining 10 A surge capability for inductive load turn-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE2955T	TO-220 package, R_thj-case = 3 °C/W, same V_CEO/I_C ratings but higher thermal mass.	Requires through-hole assembly and larger heatsink footprint; better for low-frequency, high-duty-cycle operation.	Select when board-level thermal management favors vertical mounting and long-term reliability over density.
BD241C	TO-126 package, V_CEO = –80 V, I_C = –6 A, h_FE min = 25, lower power rating (12.5 W).	Suitable for lower-current, higher-voltage switching where SOA margin is prioritized over peak current.	Choose when system voltage exceeds 60 V and space constraints permit smaller package with reduced current demand.

Compared with MJE2955T and BD241C, the MJD2955T4 offers superior PCB area efficiency and automated assembly compatibility via TO-252, while trading off some thermal mass and absolute voltage headroom-ideal for compact, medium-duty industrial controls.

Availability

MJD2955T4 is available at Aetrix Electronics and suitable for audio amplifiers, linear regulators, DC motor drives, and industrial PLC outputs requiring stable component supply and RoHS-compliant SMT packaging.

Supply support for MJD2955T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The MJD2955T4 belongs to ST's general-purpose power bipolar transistor family, engineered for cost-sensitive, medium-power linear and switching applications where robustness, manufacturability, and thermal performance are critical.

FAQ

What is the maximum safe continuous collector current for MJD2955T4 at 70°C case temperature?

At T_c = 70 °C, the MJD2955T4 must be derated linearly from its 20 W rating at 25 °C. With R_thj-case = 6.25 °C/W, junction temperature reaches 150 °C at 20 W, so allowable power drops to 12.5 W at 70 °C. Using V_CE(sat) ≈ –1.1 V, max continuous I_C ≈ 11.4 A-but absolute limit remains –10 A per Absolute Maximum Ratings table.

Can MJD2955T4 be used in parallel with another unit for higher current handling?

Parallel operation is not recommended without external emitter resistors due to negative temperature coefficient of V_BE, causing current hogging. ST does not specify matching tolerances for h_FE or V_BE between units. If required, use 0.1 Ω emitter resistors per device and verify thermal coupling in final layout.

Is the TO-252 pinout of MJD2955T4 compatible with MJD3055T4 in complementary circuits?

Yes-both share identical TO-252 (DPAK) pinout: Pin 1 = Emitter (NPN) / Emitter (PNP), Pin 2 = Collector (tab), Pin 3 = Base. This enables symmetrical PCB layout for push-pull or H-bridge designs without routing inversion.

Does MJD2955T4 require a base resistor when driven by a microcontroller GPIO?

Yes-a series base resistor is mandatory to limit I_B. For I_C = –4 A and h_FE = 20, minimum I_B = –200 mA. With 3.3 V GPIO and V_BE(on) ≈ –1.8 V, R_B ≈ 7.5 Ω. Use 5–10 Ω, 1 W resistor and verify thermal rise under worst-case duty cycle.

MJD2955T4 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.1V @ 400mA, 4A

Current - Collector Cutoff (Max):: 50µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 4A, 4V

Power - Max:: 20 W

Frequency - Transition:: 2MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

MJD2955T4 FAQ

1.How can I place an order for MJD2955T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD2955T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD2955T4 reliable?

The price and inventory of MJD2955T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD2955T4 is usually 5 days.

3.What payment methods are accepted for MJD2955T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD2955T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD2955T4?

MJD2955T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD2955T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD2955T4?

For technical support, including MJD2955T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD2955T4 requirements.

6.How does Aetrix verify that MJD2955T4 is sourced from the original manufacturer or authorized distributors?

All MJD2955T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD2955T4 meets industry standards.

7.What is the process for return or replacement of MJD2955T4?

All MJD2955T4 units undergo pre-shipment inspection (PSI). If there is an issue with MJD2955T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD2955T4 part is unused and in its original packaging.

Return procedure for MJD2955T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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