onsemi MJD2955TF

Overview

MJD2955TF from Fairchild Semiconductor is a PNP epitaxial silicon power transistor in D-PAK (TO-252) package, rated for −60 V V_CEO, −10 A I_C, 20 W P_C at T_C=25°C, and specified for general-purpose amplification and low-speed switching in surface-mount power circuits.

For engineers reviewing the MJD2955TF datasheet, pinout, applications, or equivalent options, key selection criteria include its −60 V collector-emitter sustaining voltage, DC current gain (h_FE) of 20–100 at −4 A to −10 A, −1.1 V V_CE(sat) at −4 A/−0.4 A, f_T ≥ 2 MHz, and D-PAK thermal performance with 150°C maximum junction temperature.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and saturated switching modes, with base-emitter turn-on voltage of −1.8 V at −4 A collector current and collector-emitter saturation voltage as low as −1.1 V under controlled drive conditions. Its safe operating area supports pulsed operation up to −10 A with appropriate heatsinking.

The device features a current gain bandwidth product (f_T) of ≥2 MHz at −10 V V_CE and −500 mA I_C, enabling use in audio-frequency amplifiers and slow-switching power control stages where high gain at moderate frequencies is required without RF-grade speed.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad (collector tab) for thermal conduction; 3-terminal configuration optimized for automated assembly and PCB-level heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE2955T, MJD2955TF offers identical electrical performance in a surface-mount D-PAK package, while STP10PF06 provides a MOSFET alternative with zero gate current and lower on-resistance but distinct switching dynamics and layout considerations.

Availability

MJD2955TF is available at Aetrix Electronics and suitable for audio amplifier output stages, linear regulator pass elements, industrial relay drivers, and DC motor control circuits requiring stable component supply and long-term manufacturability.

Supply support for MJD2955TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The MJD2955TF belongs to Fairchild's general-purpose PNP power transistor family, designed for cost-effective, thermally robust amplification and low-speed switching in industrial and consumer power electronics.

FAQ

What is the maximum continuous collector current for MJD2955TF?

The MJD2955TF is rated for −10 A continuous collector current at case temperature T_C = 25°C. This rating decreases linearly with rising case temperature per the power derating curve in the datasheet, reaching zero at approximately 135°C T_C. For sustained operation above 1 A, thermal design using the D-PAK exposed tab is essential to maintain junction temperature below 150°C.

Does MJD2955TF have a built-in protection diode?

No, the MJD2955TF does not integrate any protection diodes. It is a bare PNP bipolar transistor with no internal clamp or flyback diode. When used in inductive load applications such as relay or motor driving, an external freewheeling diode must be connected across the load to suppress inductive voltage spikes and prevent device failure.

What is the typical V_BE(on) of MJD2955TF at rated current?

The typical base-emitter on voltage (V_BE(on)) of MJD2955TF is −1.8 V at V_CE = −4 V and I_C = −4 A. This value reflects forward-biased PNP junction behavior and must be accounted for in base drive resistor calculations to ensure sufficient base current (I_B ≥ I_C/h_FE(min)) for full saturation, especially at higher collector currents.

Can MJD2955TF be used in parallel for higher current handling?

MJD2955TF can be operated in parallel only with careful attention to emitter ballasting resistors and matched thermal mounting. Due to positive temperature coefficient of V_BE, unequal current sharing may occur without individual emitter resistors. Fairchild does not specify guaranteed matching between units, so parallel operation requires empirical validation and thermal coupling to avoid thermal runaway in the MJD2955TF array.

Is MJD2955TF RoHS compliant and lead-free?

Yes, MJD2955TF is Pb-free and RoHS compliant, as confirmed by Fairchild's package marking convention and product status documentation. The "F" suffix denotes lead-free second-level interconnect, and the device meets EU RoHS Directive 2011/65/EU requirements. No exemptions apply, and the part is suitable for environmentally regulated industrial and consumer applications.