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onsemi MJD3055RLG

Part No.:
MJD3055RLG
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixMJD3055RLG.pdf
Description:
TRANS NPN 60V 10A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,738

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Product details

Overview

MJD3055RLG from onsemi is an NPN silicon power transistor in DPAK (TO-252) package, rated for 60 VCEO, 10 AC, and 20 W at TC = 25 °C, designed for general-purpose amplification and low-speed switching in industrial power supplies and motor control circuits.

For engineers reviewing the MJD3055RLG datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal derating behavior, safe operating area limits, DC current gain (hFE = 20–100), saturation voltage (VCE(sat) ≤ 1.1 V at IC = 4 A), and Pb-free RoHS-compliant packaging details.

Technical Context

The MJD3055RLG operates as a medium-power NPN bipolar junction transistor with complementary pairing to MJD2955 (PNP). Its design supports linear amplification and hard-switching applications up to ~2 MHz fT, with base-emitter on voltage (VBE(on)) ≤ 1.8 V and emitter-base breakdown (VEB) rated at 5 V.

Thermal performance is defined by RJC = 6.25 °C/W and RJA = 71.4 °C/W under specified PCB pad conditions. Safe operating area (SOA) curves enforce simultaneous limits on collector current, collector-emitter voltage, pulse width, and duty cycle to prevent second breakdown or thermal runaway.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 60 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines maximum supply rail compatibility in switching topologies.
IC 10 A - Continuous collector current rating at TC = 25 °C; requires heatsinking above ambient to sustain full current.
PD @ TC = 25 °C 20 W - Total power dissipation limit when case temperature is maintained at 25 °C; derates linearly at 0.16 W/°C above that point.
hFE 20–100 - DC current gain range at IC = 4 A and VCE = 4 V; enables predictable base drive sizing for saturated switching.
VCE(sat) ≤ 1.1 V @ IC = 4 A, IB = 0.4 A - Low saturation voltage minimizes conduction loss in linear regulators and H-bridge driver stages.
fT 2 MHz - Current-gain bandwidth product at IC = 500 mA, VCE = 10 V; sets upper frequency limit for small-signal amplification.

Pinout & Package

DPAK-3 (TO-252) surface-mount package with exposed drain tab (pin 2 and 4 electrically connected to collector); thermally optimized for PCB copper pour attachment.

Pin/Terminal Circuit Role Design Meaning
1 Base Control terminal requiring current-driven bias; typical IB = 0.4 A for full saturation at IC = 4 A.
2 & 4 Collector High-current output node tied to exposed metal tab; must be connected to ground plane or heatsink for thermal management.
3 Emiter Reference terminal for emitter-follower or common-emitter configurations; carries full load current in switching mode.

Key Features

Feature Design Value
High current gain-bandwidth product fT = 2 MHz enables stable operation in audio-frequency amplifiers and PWM modulators up to ~100 kHz.
Low VCE(sat) at high current VCE(sat) ≤ 1.1 V at IC = 4 A reduces conduction losses in 12–48 V DC power stages.
AEC-Q101 qualified variant available NJVMJD3055T4G meets automotive stress testing requirements for under-hood and body electronics.
Pb-free and RoHS compliant Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak ≤ 260 °C).

Applications

Industrial Power Supply DC Motor Driver

Use Scenario: Regulated 24 V output stage in DIN-rail mounted AC/DC converter with overcurrent protection.

IC Role / Device Role / Timing Role: NPN power switch in series-pass or foldback current limiting configuration.

Use Value: 60 V VCEO and 10 A IC support robust short-circuit tolerance without external current sense resistors.

Use Scenario: Half-bridge leg in brushed DC motor controller for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element driven by optocoupled gate driver.

Use Value: VCE(sat) ≤ 1.1 V at 4 A ensures <1.5 W conduction loss per device at full load, reducing heatsink size.

Linear Voltage Regulator Relay Driver Circuit

Use Scenario: Adjustable 3–15 V, 2 A lab bench supply with thermal foldback.

IC Role / Device Role / Timing Role: Pass transistor in series-regulated topology with Darlington base drive.

Use Value: hFE ≥ 20 at IC = 4 A allows simple resistor-based base bias network without active drivers.

Use Scenario: High-current relay coil driver in building automation panel with 12 V/24 V logic interface.

IC Role / Device Role / Timing Role: Saturated switch controlling 500 mA relay coil with flyback diode protection.

Use Value: 5 V VEB rating prevents reverse-bias damage during fast coil de-energization transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD3055T4G Same die, identical electrical specs; differs only in tape-and-reel packaging (2500 pcs/reel vs. rail-packaged MJD3055RLG). No functional difference; selected for automated SMT assembly instead of manual or semi-automated placement. Choose MJD3055T4G for high-volume production lines using pick-and-place machines.
STP16NF06L N-channel MOSFET (60 V, 16 A, RDS(on) = 0.05 Ω); gate-driven vs. current-driven; no DC current gain required. Enables zero-gate-current standby but requires higher gate drive voltage (> 4.5 V) and lacks inherent current limiting. Prefer STP16NF06L where fast switching (>100 kHz), low gate drive power, or synchronous rectification is needed.

Compared with MJD3055RLG, MJD3055T4G offers identical performance in automated manufacturing, while STP16NF06L shifts design toward voltage-controlled switching with lower conduction loss at high frequencies but forfeits built-in current gain and thermal SOA predictability.

Availability

MJD3055RLG is available at Aetrix Electronics and suitable for industrial power supplies, DC motor drivers, linear voltage regulators, and relay driver circuits requiring stable component supply across extended production lifecycles.

Supply support for MJD3055RLG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJD3055RLG belongs to onsemi's complementary power transistor family designed for cost-sensitive, medium-power linear and switching applications where ruggedness, thermal stability, and Pb-free compliance are essential.

FAQ

What is the maximum continuous collector current for MJD3055RLG?

The MJD3055RLG is rated for 10 A continuous collector current (IC) at case temperature TC = 25 °C. Operation above this temperature requires linear derating at 0.16 W/°C for power dissipation, and actual current capability drops with rising junction temperature-designers must verify thermal design using RJC = 6.25 °C/W and PCB copper area.

Is MJD3055RLG pin-compatible with MJD3055T4G?

Yes, MJD3055RLG and MJD3055T4G share identical DPAK-3 (TO-252) mechanical footprint, pinout (Base–Collector–Emitter–Collector), and electrical specifications. The only distinction is packaging format: MJD3055RLG ships in rails (75 units), while MJD3055T4G uses tape-and-reel (2500 units) for SMT placement.

Does MJD3055RLG meet automotive qualification standards?

The standard MJD3055RLG is not AEC-Q101 qualified. However, onsemi offers the NJVMJD3055T4G variant-identical electrically but manufactured under automotive-specific process controls, PPAP-capable, and fully AEC-Q101 qualified for under-hood and body electronics applications.

What is the safe operating area (SOA) limitation for MJD3055RLG at 100 VCE?

MJD3055RLG cannot operate at 100 VCE: its absolute maximum VCEO is 60 V. At VCE = 60 V, the SOA curve (Figure 9) restricts continuous IC to ≤ 0.1 A; pulsed operation up to 1 ms allows ~1.5 A, provided TJ(pk) ≤ 150 °C and duty cycle remains ≤ 10%.

Can MJD3055RLG replace MJE3055 in existing designs?

MJD3055RLG is electrically similar to MJE3055 but packaged in surface-mount DPAK instead of through-hole TO-220. While electrical parameters align closely (VCEO, IC, hFE, VCE(sat)), the change requires PCB layout revision due to different thermal pad geometry, mounting method, and solder profile-no drop-in replacement without hardware modification.

MJD3055RLG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
10 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Current - Collector Cutoff (Max):
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Power - Max:
1.75 W
Frequency - Transition:
2MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

MJD3055RLG FAQ

1.How can I place an order for MJD3055RLG through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD3055RLG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD3055RLG reliable?

The price and inventory of MJD3055RLG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD3055RLG is usually 5 days.

3.What payment methods are accepted for MJD3055RLG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD3055RLG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD3055RLG?

MJD3055RLG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD3055RLG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD3055RLG?

For technical support, including MJD3055RLG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD3055RLG requirements.

6.How does Aetrix verify that MJD3055RLG is sourced from the original manufacturer or authorized distributors?

All MJD3055RLG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD3055RLG meets industry standards.

7.What is the process for return or replacement of MJD3055RLG?

All MJD3055RLG units undergo pre-shipment inspection (PSI). If there is an issue with MJD3055RLG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD3055RLG part is unused and in its original packaging.

Return procedure for MJD3055RLG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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