onsemi MJD3055TF

Overview

MJD3055TF from ON Semiconductor is an NPN epitaxial silicon power transistor in D-PAK surface-mount package, rated for 60 V V_CEO, 10 A I_C, and 20 W P_C at T_C = 25°C. It delivers DC current gain (h_FE) ≥20 at 4 A and ≥5 at 10 A, with V_CE(sat) ≤1.1 V at I_C = 4 A / I_B = 0.4 A - optimized for low-speed switching and general-purpose amplifier applications in motor drivers and power supplies.

For engineers reviewing the MJD3055TF datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/I_C ratings, D-PAK thermal performance, h_FE linearity at high current, and saturation voltage behavior under pulsed and DC conditions.

Technical Context

The MJD3055TF operates as a medium-power bipolar junction transistor with fixed NPN polarity and non-isolated collector tab. Its design targets linear amplification and hard-switching roles where moderate bandwidth (f_T ≥ 2 MHz) and robust safe operating area (SOA) up to 10 A/60 V are required.

It features electrically similar characteristics to the legacy MJE3055T but in surface-mount D-PAK form factor, supporting automated assembly and improved thermal coupling to PCB copper. Base-emitter on-voltage (V_BE(on)) is specified at 1.8 V under 4 A collector drive, enabling predictable gate/base driver sizing in discrete switch stages.

Key Specifications

Pinout & Package

Package: D-PAK (TO-252), surface-mount, single-ended heat sink tab (collector-connected). Dimensions: 9.50 × 6.10 × 2.70 mm (L × W × H), with 3-pin configuration and exposed drain pad for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD3055T, the MJD3055TF offers identical silicon performance in a surface-mount package ideal for automated production; versus STP16NF06L, it provides predictable h_FE-based current control at lower cost, though with slower switching and base drive overhead.

Availability

MJD3055TF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, linear amplifiers, and linear regulator pass elements requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for MJD3055TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJD3055TF belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, designed specifically for cost-sensitive, medium-power linear and switching applications where reliability, thermal robustness, and proven SOA performance are critical.

FAQ

What is the maximum junction temperature rating for the MJD3055TF?

The MJD3055TF has a maximum junction temperature (T_J) of 150°C, as specified in its absolute maximum ratings table. This value defines the upper thermal limit for silicon operation; sustained operation near this threshold requires careful thermal design using the published power derating curve and D-PAK thermal resistance data. Always verify actual T_J in-system using case temperature measurements and the MJD3055TF's θ_JC parameter.

Does the MJD3055TF have a built-in base-emitter resistor?

No, the MJD3055TF is a standard three-terminal NPN bipolar transistor with no integrated base-emitter resistor. It requires external base current limiting - typically via a series resistor or active current source - to ensure proper biasing and prevent thermal runaway. This distinguishes it from digital transistors (e.g., MMDT3904) and confirms its role as a discrete, manually biased power device.

Can the MJD3055TF be used in parallel configurations for higher current handling?

Yes, the MJD3055TF can be paralleled, but only with emitter resistors (typically 0.1–0.5 Ω) to ensure current sharing. Its positive temperature coefficient of V_CE(sat) helps stabilize parallel operation, yet mismatched h_FE and thermal gradients require careful layout and derating. For designs exceeding 15 A, consider dedicated multi-die packages or MOSFET alternatives instead of unbalanced paralleling of MJD3055TF units.

What is the Safe Operating Area (SOA) limitation for the MJD3055TF at 25°C case temperature?

At T_C = 25°C, the MJD3055TF's SOA is defined up to 10 A and 60 V in DC mode, with pulse limits extending further based on pulse width and duty cycle. The published SOA graph (Figure 5) shows boundary curves for DC, 10 ms, 1 ms, and 100 µs pulses. Exceeding these boundaries risks secondary breakdown - a destructive failure mechanism not recoverable by reducing load. Always consult the MJD3055TF SOA plot before designing switching waveforms or overload protection.

Is the MJD3055TF pin-compatible with the older MJE3055T?

No, the MJD3055TF is not pin-compatible with the MJE3055T. While both share identical electrical characteristics, the MJD3055TF uses a D-PAK (TO-252) package with pins arranged as Base–Collector–Emitter (1–2–3), whereas the MJE3055T is in TO-220 with Collector–Base–Emitter (1–2–3) pinout. Physical layout and footprint differ significantly; PCB redesign is required when substituting MJD3055TF for MJE3055T.