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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD31CTF_SBDD001A

Name: MJD31CTF_SBDD001A
Brand: onsemi
SKU: MJD31CTF_SBDD001A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD31CTF_SBDD001A

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: MJD31CTF_SBDD001A.pdf

Description:: TRANS NPN 100V 3A DPAK

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Product details

Overview

MJD31CTF_SBDD001A from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-252 (DPAK) package, rated for 100 V V_CEO, 3 A DC collector current, and 15 W collector dissipation at T_C = 25°C. It serves as a general-purpose amplifier and low-speed switching device in power stages of DC-DC converters and linear regulators.

For engineers reviewing the MJD31CTF_SBDD001A datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO voltage rating, h_FE gain consistency at 3 A, V_CE(sat) ≤ 1.2 V under 375 mA base drive, thermal derating above 25°C case temperature, and DPAK surface-mount compatibility with standard PCB layout practices.

Technical Context

This discrete NPN bipolar junction transistor operates in linear amplification and saturated switching modes. Its 100 V collector-base and collector-emitter breakdown ratings support use in 48 V and 60 V bus applications, while its 3 MHz f_T bandwidth enables stable operation up to low-frequency switching (<100 kHz).

The device features a minimum h_FE of 25 at I_C = 1 A and 10 at I_C = 3 A, with V_BE(on) = 1.8 V and V_CE(sat) = 1.2 V under specified drive conditions - parameters critical for calculating base drive requirements and conduction loss in power stage design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Maximum safe collector-emitter voltage before avalanche breakdown; defines upper limit for switch-node voltage swing in flyback or buck topologies.
I_C (DC)	3 A - Continuous collector current capability at T_C = 25°C; determines maximum load current handling without forced cooling.
P_C (T_C = 25°C)	15.00 W - Thermal power limit at case temperature 25°C; requires heatsinking or airflow for sustained operation above ~5 W.
h_FE	10–50 - DC current gain range at V_CE = 4 V; dictates required base drive current (e.g., ≥375 mA for 3 A collector current).
V_CE(sat)	1.2 V @ I_C = 3 A, I_B = 375 mA - Saturation voltage directly impacts conduction loss (P_cond = I_C × V_CE(sat)) in switching applications.
f_T	3 MHz - Current-gain bandwidth product; confirms suitability for low-frequency switching (≤100 kHz) but not RF or high-speed PWM.

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad (pin 2). Standard JEDEC outline with 2.3 mm lead pitch and 6.7 mm × 6.2 mm body dimensions.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Control terminal requiring ≥375 mA DC drive to saturate at 3 A collector current; low-impedance input with V_BE(on) ≈ 1.8 V.
2 (Center)	Collector	Main power output terminal; electrically connected to exposed metal tab for thermal conduction to PCB copper pour or heatsink.
3 (Right)	Emitter	Reference node for base drive and current return path; must be routed with low-inductance trace in switching applications.

Key Features

Feature	Design Value
General-purpose power switching	Validated for use in non-critical switching regulators and linear amplifiers where <100 kHz operation and moderate gain stability are sufficient.
TO-252 surface-mount package	Enables automated assembly and direct thermal coupling to PCB copper; eliminates through-hole mounting and reduces board space vs. TO-220.
Electrically similar to TIP31C	Provides drop-in functional replacement path for legacy through-hole designs when adapted to DPAK footprint and thermal management.
150°C maximum junction temperature	Supports operation in industrial ambient environments (−40°C to +125°C) with appropriate derating per Figure 7 (PC vs. T_C curve).

Applications

Switching Regulators	DC-DC Converters
Use Scenario: Used as main switching transistor in non-synchronous buck or flyback converters operating below 100 kHz. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer from input to output via duty-cycle-modulated on/off states. Use Value: 100 V V_CEO supports 48 V input rails; 1.2 V V_CE(sat) limits conduction loss to ≤3.6 W at 3 A, simplifying thermal design.	Use Scenario: Employed in isolated forward or push-pull converter output stages delivering 1–3 A loads. IC Role / Device Role / Timing Role: High-current driver transistor amplifying control signals to drive transformer primary or secondary windings. Use Value: h_FE ≥10 at 3 A ensures predictable base drive sizing; TO-252 thermal performance sustains continuous operation at full rated current.
Power Amplifiers	Motor Drivers (Low-Speed)
Use Scenario: Deployed in Class AB audio or signal amplifiers requiring 1–3 A peak output current. IC Role / Device Role / Timing Role: Output stage transistor delivering amplified current to speaker or load with minimal distortion at low frequencies. Use Value: V_CEO = 100 V allows ±40 V rail operation; f_T = 3 MHz ensures adequate gain margin up to 20 kHz audio band.	Use Scenario: Integrated into H-bridge or single-ended driver circuits for small DC motors (e.g., fans, actuators) running at ≤10 kHz PWM. IC Role / Device Role / Timing Role: Low-speed switching element enabling bidirectional or unidirectional motor current control. Use Value: 5 A pulse rating (I_CP) accommodates motor startup surges; 150°C T_J rating supports enclosed mechanical enclosures.

Switching Regulators

DC-DC Converters

Use Scenario: Used as main switching transistor in non-synchronous buck or flyback converters operating below 100 kHz.

IC Role / Device Role / Timing Role: Power switching element controlling energy transfer from input to output via duty-cycle-modulated on/off states.

Use Value: 100 V V_CEO supports 48 V input rails; 1.2 V V_CE(sat) limits conduction loss to ≤3.6 W at 3 A, simplifying thermal design.

Use Scenario: Employed in isolated forward or push-pull converter output stages delivering 1–3 A loads.

IC Role / Device Role / Timing Role: High-current driver transistor amplifying control signals to drive transformer primary or secondary windings.

Use Value: h_FE ≥10 at 3 A ensures predictable base drive sizing; TO-252 thermal performance sustains continuous operation at full rated current.

Power Amplifiers

Motor Drivers (Low-Speed)

Use Scenario: Deployed in Class AB audio or signal amplifiers requiring 1–3 A peak output current.

IC Role / Device Role / Timing Role: Output stage transistor delivering amplified current to speaker or load with minimal distortion at low frequencies.

Use Value: V_CEO = 100 V allows ±40 V rail operation; f_T = 3 MHz ensures adequate gain margin up to 20 kHz audio band.

Use Scenario: Integrated into H-bridge or single-ended driver circuits for small DC motors (e.g., fans, actuators) running at ≤10 kHz PWM.

IC Role / Device Role / Timing Role: Low-speed switching element enabling bidirectional or unidirectional motor current control.

Use Value: 5 A pulse rating (I_CP) accommodates motor startup surges; 150°C T_J rating supports enclosed mechanical enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor MJD31CT4G	Same die, identical electrical specs, TO-252-3 package, tape-and-reel packaging; marked "MJD31C" on top.	No functional difference; fully interchangeable in design and layout; differs only in packaging format (reel vs. bulk) and marking convention.	Select MJD31CT4G for automated SMT line compatibility and guaranteed ON Semiconductor traceability.
STMicroelectronics BD237	Higher V_CEO = 120 V, lower h_FE min = 25 @ I_C = 2 A, TO-126 package (through-hole), P_C = 25 W at T_C = 25°C.	Requires PCB redesign (through-hole vs. SMT); better voltage margin but less suitable for compact surface-mount layouts.	Choose BD237 only if >100 V headroom is mandatory and through-hole assembly is acceptable.

Compared with MJD31CTF_SBDD001A, MJD31CT4G offers identical performance in a standardized ON Semiconductor reel-packaged variant, while BD237 trades SMT compatibility for higher voltage rating and through-hole mounting - making MJD31CTF_SBDD001A optimal for space-constrained, automated production of 48–60 V power stages.

Availability

MJD31CTF_SBDD001A is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and power amplifiers requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for MJD31CTF_SBDD001A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic devices for automotive, industrial, cloud, and consumer markets.

The MJD31CTF_SBDD001A belongs to ON Semiconductor's general-purpose bipolar power transistor product line, designed for cost-effective, robust switching and amplification in non-safety-critical industrial and commercial power systems.

FAQ

What is the package type and mounting style of MJD31CTF_SBDD001A?

MJD31CTF_SBDD001A uses the TO-252-3 (DPAK) surface-mount package with an exposed collector pad for thermal conduction. It is designed for reflow soldering onto PCBs with copper pour under the tab for heat dissipation. The pinout is Base–Collector–Emitter (left-to-right), matching JEDEC standard DPAK layout.

Does MJD31CTF_SBDD001A have the same specifications as the legacy Fairchild MJD31CTF?

Yes - MJD31CTF_SBDD001A is the post-integration ON Semiconductor designation for the original Fairchild MJD31CTF. All electrical characteristics (V_CEO = 100 V, I_C = 3 A, h_FE, V_CE(sat), f_T) and package dimensions remain unchanged per the official ON Semiconductor datasheet revision.

What is the maximum safe operating temperature for MJD31CTF_SBDD001A?

The absolute maximum junction temperature for MJD31CTF_SBDD001A is 150°C. Derating begins at T_C = 25°C, with linear reduction to zero power dissipation at T_C = 125°C (per Figure 7). Safe continuous operation requires maintaining T_J ≤ 150°C via heatsinking, airflow, or PCB copper area.

Can MJD31CTF_SBDD001A replace TIP31C in existing designs?

MJD31CTF_SBDD001A is electrically similar to TIP31C but uses TO-252 instead of TO-220. It can replace TIP31C functionally in circuit operation, but requires PCB layout adaptation for surface-mount assembly and thermal pad routing. Electrical behavior (gain, saturation voltage, voltage ratings) matches closely.

What base drive current is required to fully saturate MJD31CTF_SBDD001A at 3 A collector current?

To achieve V_CE(sat) ≤ 1.2 V at I_C = 3 A, MJD31CTF_SBDD001A requires I_B = 375 mA, as specified in the Absolute Maximum Ratings and Electrical Characteristics tables. This corresponds to h_FE ≈ 8 under saturation conditions, consistent with its minimum h_FE of 10 at I_C = 3 A.

MJD31CTF_SBDD001A Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 1.2V @ 375mA, 3A

Current - Collector Cutoff (Max):: 50µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10 @ 3A, 4V

Power - Max:: 1.56 W

Frequency - Transition:: 3MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

MJD31CTF_SBDD001A FAQ

1.How can I place an order for MJD31CTF_SBDD001A through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD31CTF_SBDD001A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD31CTF_SBDD001A reliable?

The price and inventory of MJD31CTF_SBDD001A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD31CTF_SBDD001A is usually 5 days.

3.What payment methods are accepted for MJD31CTF_SBDD001A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD31CTF_SBDD001A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD31CTF_SBDD001A?

MJD31CTF_SBDD001A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD31CTF_SBDD001A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD31CTF_SBDD001A?

For technical support, including MJD31CTF_SBDD001A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD31CTF_SBDD001A requirements.

6.How does Aetrix verify that MJD31CTF_SBDD001A is sourced from the original manufacturer or authorized distributors?

All MJD31CTF_SBDD001A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD31CTF_SBDD001A meets industry standards.

7.What is the process for return or replacement of MJD31CTF_SBDD001A?

All MJD31CTF_SBDD001A units undergo pre-shipment inspection (PSI). If there is an issue with MJD31CTF_SBDD001A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD31CTF_SBDD001A part is unused and in its original packaging.

Return procedure for MJD31CTF_SBDD001A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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