My Inquiry
My Account
onsemi MJD31T4G
- Part No.:
- MJD31T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD31T4G.pdf
- Description:
- TRANS NPN 40V 3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,259
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MJD31T4G from onsemi is an NPN silicon power transistor in DPAK (TO-252) package, rated for 40 VCEO, 3 A continuous collector current, and 15 W total power dissipation at TC = 25 °C. It delivers hFE ≥ 25 at IC = 1 A, VCE = 4 V, and VCE(sat) ≤ 1.2 V at IC = 3 A / IB = 375 mA - designed for low-speed switching and linear amplifier stages in industrial power supplies and motor control circuits.
For engineers reviewing the MJD31T4G datasheet, pinout, applications, or equivalent options, key selection considerations include its AEC-Q101 qualification, Pb-free RoHS-compliant DPAK-3 package with dual collector terminals, thermal resistance RθJC = 8.3 °C/W, and compatibility with legacy TIP31-based designs requiring surface-mount upgrade paths.
Technical Context
This NPN bipolar junction transistor operates in linear and saturation regions with DC current gain (hFE) specified from 10 to 50 across 1–3 A collector current range and base-emitter on voltage (VBE(on)) ≤ 1.8 V at IC = 3 A. Its fT = 3 MHz supports audio-frequency amplification and low-speed PWM switching up to ~100 kHz.
The device features complementary PNP pairing with MJD32 series, shares electrical similarity with TIP31/TIP32 through pin-compatible DPAK footprint, and meets UL 94 V-0 flammability rating with epoxy encapsulation. Thermal derating follows 0.12 W/°C above 25 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage headroom in switching applications. |
| IC (continuous) | 3.0 A - Continuous DC collector current capability; sets maximum load drive capacity in linear regulators or relay drivers. |
| PD @ TC = 25 °C | 15 W - Total power dissipation at case temperature 25 °C; requires heatsinking when ambient or case temperature rises. |
| hFE @ IC = 1 A | 25–50 - DC current gain range at moderate current; determines required base drive current for saturation in switch mode. |
| VCE(sat) @ IC = 3 A | ≤ 1.2 V - Saturation voltage drop across collector-emitter; directly impacts conduction loss and thermal rise in high-current switching. |
| RθJC | 8.3 °C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise above heatsink temperature. |
| fT | 3 MHz - Current-gain-bandwidth product; limits usable frequency range for small-signal amplification and switching transitions. |
Pinout & Package
DPAK-3 (Case 369C) surface-mount package with 4-terminal configuration: pins 1–4 correspond to BASE, COLLECTOR, EMITTER, COLLECTOR respectively; metal tab (pin 2 & 4) serves as second collector connection and thermal path to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires current-limited drive to achieve full saturation at 3 A collector load. |
| 2 & 4 | Collector (dual) | Primary current output path and thermal interface; both pins must be connected to high-current trace or heatsink pad. |
| 3 | Emitter | Reference node for biasing; connects to ground or low-side return path in common-emitter configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HBM ESD (3B), and PPAP compliance - suitable for under-hood and chassis-mounted modules. |
| Dual collector terminals | Reduces current density and thermal resistance by splitting collector current across two parallel leads and metal tab - improves power handling without larger package. |
| Lead-formed for SMT | Pre-bent leads enable direct placement on standard DPAK footprints; eliminates manual forming and ensures consistent solder joint geometry. |
| Pb-free & RoHS compliant | Meets global environmental regulations; compatible with lead-free reflow profiles up to 260 °C peak solder temperature. |
| UL 94 V-0 epoxy | Self-extinguishing encapsulant prevents flame propagation during fault conditions - required for industrial safety certifications. |
Applications
| DC Motor Driver Stage | Linear Voltage Regulator Pass Element |
|---|---|
|
Use Scenario: Driving 24 V, 2 A brushed DC motors in industrial actuators with PWM-controlled speed regulation. IC Role / Device Role / Timing Role: NPN power switch in common-emitter configuration, sinking motor current to ground during active PWM cycles. Use Value: Low VCE(sat) minimizes conduction loss (≤3.6 W at 3 A), while dual collector terminals reduce localized heating at PCB interface. |
Use Scenario: High-current pass transistor in adjustable 3–24 V linear regulators delivering up to 2.5 A to analog sensor subsystems. IC Role / Device Role / Timing Role: Series pass element controlled by error amplifier feedback loop; operates in linear region with constant current flow. Use Value: Stable hFE over −55 °C to +150 °C ensures predictable base drive requirements across wide ambient temperature ranges. |
| Relay and Solenoid Driver | Audio Power Amplifier Output Stage |
|
Use Scenario: Driving 12 V, 1.8 A electromagnetic relays in PLC I/O modules with opto-isolated control inputs. IC Role / Device Role / Timing Role: Low-speed saturated switch turning relay coil on/off; handles inductive kickback via external flyback diode. Use Value: 40 V VCEO provides 3× margin over 12 V supply, enabling robust operation during load dump transients. |
Use Scenario: Complementary Class-AB output stage in 5 W audio amplifiers for public address systems and instrumentation. IC Role / Device Role / Timing Role: NPN half of push-pull pair delivering positive half-cycle current to 4 Ω speaker load. Use Value: fT = 3 MHz supports full audio bandwidth (20 Hz–20 kHz) with minimal phase shift and distortion in linear operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD31CT4G | Higher VCEO = 100 V; otherwise identical DPAK-3 package, pinout, and thermal specs. | Suitable for 48 V or higher bus voltage systems where 40 V rating is insufficient. | Select MJD31CT4G when operating above 30 V DC supply or requiring enhanced transient voltage margin. |
| TIP31C | TO-220 through-hole package; same VCEO = 100 V, IC = 3 A, but higher RθJA = 125 °C/W and no AEC-Q101 qualification. | Limited to non-automotive, non-SMT designs where board space and thermal performance allow larger footprint. | Choose TIP31C only for prototyping or legacy through-hole assemblies - not for volume SMT production or automotive use. |
Compared with MJD31T4G, MJD31CT4G extends voltage capability without layout change, while TIP31C sacrifices surface-mount compatibility and automotive qualification for broader availability in legacy formats.
Availability
MJD31T4G is available at Aetrix Electronics and suitable for industrial motor drives, linear power supplies, and automotive body control modules requiring stable component supply with AEC-Q101 validation and Pb-free compliance.
Supply support for MJD31T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The MJD31T4G belongs to onsemi's complementary power transistor family engineered for surface-mount replacement of legacy TO-220 devices in cost-sensitive, high-reliability power conversion and control applications.
FAQ
What is the maximum continuous collector current rating for MJD31T4G?
The MJD31T4G is rated for 3.0 A continuous collector current (IC) at case temperature TC = 25 °C. Derating applies above this temperature at 0.12 W/°C for power dissipation, and actual current capability decreases with rising junction temperature. For sustained 3 A operation, adequate heatsinking must maintain TC ≤ 25 °C per the datasheet's thermal characteristics.
Does MJD31T4G have automotive qualification?
Yes, MJD31T4G carries the NJV prefix in its ordering code (NJVMJD31T4G*), confirming it is AEC-Q101 qualified and PPAP capable. This certification covers stress testing for temperature cycling, humidity, mechanical shock, and ESD (HBM Class 3B), making MJD31T4G suitable for automotive body electronics and chassis applications.
What package type does MJD31T4G use and how many terminals does it have?
MJD31T4G uses the DPAK-3 (TO-252-3) surface-mount package (Case 369C) with four physical terminals: Pin 1 = Base, Pins 2 & 4 = Collector (dual), Pin 3 = Emitter. The metal tab forms part of the collector connection and serves as the primary thermal path to the PCB.
How does MJD31T4G compare to TIP31 in terms of mounting and performance?
MJD31T4G is electrically similar to the TIP31 series but optimized for surface mount: it uses DPAK instead of TO-220, has dual collector terminals for improved thermal conduction, and includes AEC-Q101 qualification. While both share 3 A IC and ~40 V VCEO (TIP31A/B/C variants differ), MJD31T4G offers lower RθJA in properly designed layouts and eliminates through-hole assembly steps.
What is the safe operating area (SOA) limitation for MJD31T4G at DC operation?
At DC (single-pulse, t → ∞), the SOA for MJD31T4G is bounded by its maximum collector current (3 A), collector-emitter voltage (40 V), and power dissipation limit (15 W). For example, simultaneous operation at 20 V and 2 A (40 W) exceeds the 15 W limit and is unsafe without forced cooling - design must stay within the derated SOA curve shown in Figure 14 of the datasheet.
MJD31T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max):
- 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 10 @ 3A, 4V
- Power - Max:
- 1.56 W
- Frequency - Transition:
- 3MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD31T4G FAQ
1.How can I place an order for MJD31T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD31T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD31T4G reliable?
The price and inventory of MJD31T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD31T4G is usually 5 days.
3.What payment methods are accepted for MJD31T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD31T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD31T4G?
MJD31T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD31T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD31T4G?
For technical support, including MJD31T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD31T4G requirements.
6.How does Aetrix verify that MJD31T4G is sourced from the original manufacturer or authorized distributors?
All MJD31T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD31T4G meets industry standards.
7.What is the process for return or replacement of MJD31T4G?
All MJD31T4G units undergo pre-shipment inspection (PSI). If there is an issue with MJD31T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD31T4G part is unused and in its original packaging.
Return procedure for MJD31T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJD31T4G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
