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Diodes Incorporated MJD32C-13

Part No.:
MJD32C-13
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixMJD32C-13.pdf
Description:
TRANS PNP 100V 3A TO-252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,769

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Product details

Overview

MJD32C-13 from Diodes Incorporated is a 100V PNP high-voltage bipolar junction transistor in TO252 (DPAK) package, rated for −3A continuous collector current and −100V collector-emitter breakdown voltage. It serves as a power switching or linear amplification device in industrial DC-DC converters, motor drive stages, and high-side load switches where robust negative-rail control is required.

For engineers reviewing the MJD32C-13 datasheet, MJD32C-13 pinout, MJD32C-13 application, or MJD32C-13 equivalent, key selection criteria include verified VCEO = −100V, IC = −3A, VCE(sat) ≤ −1.2V at −3A/−375mA, hFE ≥ 25 at −1A, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PNP transistor operates with emitter-referenced biasing and requires base current sinking to enable conduction. Its safe operating area (SOA) supports single-pulse currents up to −5A and maintains thermal stability via low RθJL = 3.6°C/W to the exposed collector pad.

Designed for high-voltage switching, it features complementary pairing with the NPN MJD31C, enabling push-pull or H-bridge topologies. The −6V VEBO rating and −1μA ICEO ensure stable cutoff under reverse-biased base-emitter conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−100 V: Enables use in 48V–80V DC bus systems without derating
IC (continuous)−3 A: Supports sustained 36W dissipation at VCE = −12V in TO252 with 50mm×50mm copper
VCE(sat)≤ −1.2 V @ −3A/−375mA: Limits conduction loss to ≤3.6W in saturated switch mode
hFE25–50 @ −1A to −3A: Ensures predictable base drive sizing across operating range
fT3.0 MHz: Supports switching up to ~300 kHz with adequate gain margin
RθJL3.6 °C/W: Enables direct thermal coupling to PCB copper for passive cooling

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed collector pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main current sink path and thermal interfaceExposed metal pad soldered to large copper pour; electrically tied to collector
EmitterCurrent source terminal (PNP reference node)Connected to higher potential rail; defines output voltage reference in high-side switch
BaseControl input for minority-carrier injectionRequires active pull-down (e.g., NPN driver or logic gate) to turn on device

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive underhood applications including temperature cycling and HTRB
Lead-free & halogen-freeComplies with RoHS 2 and JEDEC J-STD-020 Level 1 moisture sensitivity
High BVCEO−100V rating enables direct use in 72V battery systems without series stacking
Low RθJL3.6°C/W junction-to-lead thermal resistance simplifies thermal design with minimal heatsinking

Applications

Industrial Motor ControlAutomotive Body Electronics

Use Scenario: High-side switch for 24V BLDC gate driver power rails in HVAC actuators.

IC Role / Device Role / Timing Role: PNP power switch controlling VDD supply to half-bridge drivers.

Use Value: −100V VCEO withstands load-dump transients; −1.2V VCE(sat) minimizes power loss during continuous operation.

Use Scenario: Reverse-polarity protection circuit in 12V infotainment power distribution modules.

IC Role / Device Role / Timing Role: Series-connected PNP pass element blocking reverse battery connection.

Use Value: −100V VCBO ensures immunity to ISO 7637-2 pulse 5a; AEC-Q101 qualification guarantees field reliability.

DC-DC Converter Output StageIndustrial Power Sequencing

Use Scenario: Synchronous rectifier replacement in −48V telecom offline flyback secondary side.

IC Role / Device Role / Timing Role: Linear-regulated PNP pass transistor delivering stable −5V/2A output.

Use Value: hFE ≥25 at −3A enables fixed-gain base drive design; TO252 thermal performance sustains 2.5W dissipation.

Use Scenario: Controlled power-up sequencing of FPGA I/O banks requiring staggered −3.3V/−1.8V rails.

IC Role / Device Role / Timing Role: Delayed-enable PNP switch activated by RC-timed base pull-down.

Use Value: −6V VEBO prevents unintended turn-on during rail ramp; −1μA ICEO ensures clean off-state isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD32C-1-ESame die, tape-and-reel variant with different reel size (1,000 pcs vs. 2,500 pcs); identical electrical specsNo functional difference; used in lower-volume prototyping or space-constrained assembly linesSelect when matching existing BOM line item or optimizing feeder setup
PN3565TO92 package, −60V VCEO, −0.5A IC; lacks AEC-Q101, higher VCE(sat) (−1.5V)Limited to low-power signal switching or non-automotive consumer applicationsOnly acceptable if voltage stress <60V and current <500mA; not drop-in compatible

Compared with MJD32C-13, the MJD32C-1-E offers identical performance in smaller reels for flexibility, while PN3565 trades voltage/current capability and qualification for cost and through-hole compatibility-making it unsuitable for automotive or industrial 48V+ systems.

Availability

MJD32C-13 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, DC-DC converter output stages, and power sequencing applications requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for MJD32C-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

The MJD32C belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for ruggedized power switching in harsh environments where AEC-Q101 compliance, thermal robustness, and high breakdown voltage are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The MJD32C-13 has an operating junction temperature range of −55°C to +150°C. With its RθJL = 3.6°C/W, the maximum recommended case temperature is +125°C when mounted on a 50mm × 50mm 2oz copper pad under still air, ensuring 25°C margin below TJ(max) at full −3A load.

Can MJD32C-13 be used in parallel configurations?

Parallel operation is not recommended due to inherent hFE variation (25–50) and negative temperature coefficient of VCE(sat), which can cause current imbalance. If required, external emitter resistors (≥0.1Ω) and matched devices with binning data must be used-consult Diodes' AN-2001 for layout guidance.

Is the exposed collector pad electrically isolated from other terminals?

No-the TO252 exposed collector pad is electrically connected to the collector terminal. It must be routed to the same net as the collector pin and thermally bonded to a dedicated copper pour. Isolation requires physical separation from adjacent traces per IPC-2221 creepage/clearance rules for −100V systems.

Does MJD32C-13 support pulsed operation beyond its DC ratings?

Yes-its peak pulse collector current ICM is −5A for durations ≤100μs (duty cycle ≤2%). Safe operation requires adherence to the SOA curve in the datasheet, especially limiting VCE × IC product during pulses and verifying transient thermal impedance at the intended pulse width.

MJD32C-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Power - Max:
15 W
Frequency - Transition:
3MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

MJD32C-13 FAQ

1.How can I place an order for MJD32C-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD32C-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD32C-13 reliable?

The price and inventory of MJD32C-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD32C-13 is usually 5 days.

3.What payment methods are accepted for MJD32C-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD32C-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD32C-13?

MJD32C-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD32C-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD32C-13?

For technical support, including MJD32C-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD32C-13 requirements.

6.How does Aetrix verify that MJD32C-13 is sourced from the original manufacturer or authorized distributors?

All MJD32C-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD32C-13 meets industry standards.

7.What is the process for return or replacement of MJD32C-13?

All MJD32C-13 units undergo pre-shipment inspection (PSI). If there is an issue with MJD32C-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD32C-13 part is unused and in its original packaging.

Return procedure for MJD32C-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJD32C-13 Tags

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