STMicroelectronics MJD32CT4

Overview

MJD32CT4 from STMicroelectronics is a low-voltage PNP power transistor in DPAK (TO-252) surface-mount package, rated for −100 V V_CEO, −3 A continuous collector current, and 15 W total dissipation at T_C = 25 °C; it delivers low saturation voltage (V_CE(sat) = −1.2 V @ I_C = −3 A, I_B = −375 mA) and high DC current gain (h_FE = 25–50 @ I_C = −1 A), used in linear regulators and switching power supplies.

For engineers reviewing the MJD32CT4 datasheet, MJD32CT4 pinout, MJD32CT4 application, or MJD32CT4 equivalent, this part supports high-gain, low-V_CE(sat) PNP switching and amplification in compact surface-mount designs requiring thermal robustness on FR-4 PCBs and compatibility with complementary NPN MJD31C layouts.

Technical Context

This planar silicon PNP transistor uses "base island" layout to achieve high h_FE and low V_CE(sat) simultaneously. It operates up to 150 °C junction temperature with R_thJC = 8.3 °C/W and R_thJPCB = 50 °C/W on 1 inch², 2 oz Cu FR-4 board.

Absolutely rated for −100 V collector-base and collector-emitter blocking, −5 V emitter-base, and −5 A peak collector current, it sustains −100 V under pulse conditions (≤300 µs, ≤2% duty cycle) while maintaining <−20 µA I_CES and <−50 µA I_CEO leakage.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed metal tab (pin 3) for thermal and electrical connection to collector; molded plastic body with gull-wing leads for surface mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD32CT4, the ON Semi MJD32C offers near-identical performance with minimal thermal penalty, while the Diodes DXT32C trades gain and saturation voltage for cost-making ST's version optimal for thermally constrained, high-efficiency PNP switching.

Availability

MJD32CT4 is available at Aetrix Electronics and suitable for linear voltage regulators, DC-DC converter switches, and motor driver stages requiring stable component supply across industrial production lifecycles.

Supply support for MJD32CT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

MJD32CT4 belongs to ST's legacy power bipolar transistor family, engineered specifically for high-reliability, medium-power linear and switching applications where low V_CE(sat) and predictable h_FE are critical.

FAQ

Is MJD32CT4 RoHS-compliant and halogen-free?

Yes. MJD32CT4 is manufactured in ST's ECOPACK®-compliant DPAK package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation is available in ST's ECOPACK® database at www.st.com.

Can MJD32CT4 replace MJD32C in existing designs?

Yes - MJD32CT4 is the tape-and-reel variant of MJD32C with identical electrical, thermal, and mechanical specifications. The "T4" suffix denotes packaging format only; no circuit redesign or layout change is needed for drop-in substitution.

What is the recommended PCB footprint and thermal pad layout?

Use ST's validated DPAK footprint (Figure 14, Doc ID 13673 Rev 4): 5.2 mm × 6.2 mm pad for the tab (pin 3), with ≥1 inch² 2 oz Cu thermal plane connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Minimum trace width for emitter/base is 0.5 mm.

Does MJD32CT4 support pulsed operation beyond its DC ratings?

Yes. Per Figure 2 (Safe Operating Area), it supports −5 A peak collector current at V_CE = −20 V for pulse widths ≤300 µs and duty cycle ≤2%, provided case temperature remains ≤125 °C and transient thermal impedance is managed via adequate copper area.