Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MJD340TF

Part No.:
MJD340TF
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixMJD340TF.pdf
Description:
TRANS NPN 300V 0.5A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,697

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MJD340TF from ON Semiconductor is a high-voltage NPN epitaxial silicon power transistor in D-PAK surface-mount package, rated for 300 V VCEO, 0.5 A DC collector current, and 15 W collector dissipation at TC = 25°C. It serves as a switching element in flyback converters, relay drivers, and industrial motor control circuits requiring robust voltage blocking and pulse-current capability.

For engineers reviewing the MJD340TF datasheet, pinout, applications, or equivalent options, key selection criteria include its 300 V sustaining voltage (VCEO(sus)), hFE range of 30–240 at 50 mA, low saturation voltage (VCE(sat) ≤ 1.5 V @ IC = 0.5 A), and thermal performance in surface-mount power applications.

Technical Context

The MJD340TF operates as a single NPN bipolar junction transistor optimized for high-voltage switching rather than linear amplification. Its design emphasizes safe operating area (SOA) integrity under pulsed conditions (PW ≤ 300 µs, duty cycle ≤ 2%) and thermal stability up to 150°C junction temperature.

It features a D-PAK (TO-252) package with three terminals-Base, Collector, Emitter-configured in standard 1-2-3 pin order. The device exhibits VBE(sat) ≤ 2.0 V at IC = 0.5 A and IB = 50 mA, supporting reliable turn-on in gate-driver-coupled or resistor-biased configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO300 V - Enables use in 230 VAC line-derived supplies and boost/flyback topologies without cascading devices.
IC (DC)0.5 A - Supports continuous load switching up to ~60 W at 12 V output with adequate heatsinking.
PC @ TC=25°C15 W - Requires minimum 12 cm² copper pour (2 oz) on PCB for thermal management in sustained operation.
hFE30–240 @ VCE=10 V, IC=50 mA - Allows flexible base drive design across wide current ranges without gain saturation.
VCE(sat)≤1.5 V @ IC=0.5 A, IB=50 mA - Limits conduction loss to ≤0.75 W, critical for efficiency in PWM-driven loads.
TJ max150°C - Permits operation in enclosed industrial enclosures with ambient up to 85°C when derated per Figure 4.

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain-connected tab (Collector) for thermal conduction; lead-formed for automated placement and reflow soldering.

Pin/TerminalCircuit RoleDesign Meaning
1BaseCurrent-controlled input node; requires ≥50 mA drive for full saturation at 0.5 A collector current.
2CollectorMain high-voltage power terminal; electrically connected to exposed metal tab for thermal and electrical grounding.
3EmitterLow-side return path; referenced to system ground in common-emitter switching configurations.

Key Features

FeatureDesign Value
High breakdown voltageVCEO(sus) = 300 V ensures margin against transients in 230 VAC offline designs.
Pulsed current ratingICP = 0.75 A supports short-duration surge handling in motor startup or solenoid actuation.
Thermal robustness150°C max junction temperature enables deployment in sealed industrial controllers without forced air.
Surface-mount compatibilityD-PAK footprint aligns with IPC-7351B standard, enabling automated assembly and board-level reliability.

Applications

Switch-Mode Power SupplyIndustrial Relay Driver

Use Scenario: Used as main switch in 20–60 W flyback converters for industrial sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage NPN switching transistor controlling primary-side energy transfer during PWM on-time.

Use Value: 300 V VCEO eliminates need for snubber networks in 230 VAC-input designs, reducing component count and BOM cost.

Use Scenario: Drives 24 VDC industrial relays with coil inductance >100 mH in factory automation panels.

IC Role / Device Role / Timing Role: Low-side switch providing controlled turn-on/turn-off of relay coils with flyback diode integration.

Use Value: 0.75 A pulsed current rating accommodates relay inrush (≥5× steady-state), preventing premature failure during repeated actuation.

DC Motor ControlHigh-Voltage LED Driver

Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor controllers for material handling equipment.

IC Role / Device Role / Timing Role: NPN power switch handling bidirectional current flow when paired with complementary PNP or MOSFET.

Use Value: SOA compliance up to 100 V × 0.5 A enables safe commutation without external current limiting in PWM mode.

Use Scenario: Constant-current series switch in high-brightness LED strings powered from 100–300 VDC bus (e.g., PoE++ or rectified AC).

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator maintaining stable LED flux despite input voltage variation.

Use Value: 15 W power dissipation at case temperature allows direct PCB heatsinking for strings up to 10× 1 W LEDs without external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD350TFComplementary PNP device; identical package, voltage rating, and power dissipation but opposite polarity.Required only in push-pull or complementary emitter-follower stages-not a functional replacement.Select only when building symmetrical output stages; not suitable for single-transistor switch replacement.
STN3PF30FET-based alternative: 300 V VDSS, 0.35 A ID, logic-level gate, lower gate charge but no inherent current gain.Requires gate driver redesign; superior switching speed but higher gate drive complexity vs. base-driven BJT.Prefer for high-frequency (>50 kHz) SMPS where switching loss dominates; avoid if base-resistor drive simplicity is required.

Compared with MJD340TF, MJD350TF serves only complementary roles and cannot substitute directly, while STN3PF30 offers faster switching and zero gate current but demands gate drive circuitry-making MJD340TF preferable for cost-sensitive, low-to-mid frequency (<100 kHz), resistor-biased applications.

Availability

MJD340TF is available at Aetrix Electronics and suitable for industrial motor control, switch-mode power supply design, and high-voltage relay driving requiring stable component supply and long-term production continuity.

Supply support for MJD340TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.

The MJD340TF belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed by Fairchild for ruggedized industrial switching applications demanding reliability under voltage stress and thermal cycling.

FAQ

What is the maximum continuous collector current rating for MJD340TF?

The MJD340TF has a maximum DC collector current (IC) rating of 0.5 A at case temperature TC = 25°C. This rating decreases with rising case temperature per the derating curve in Figure 4 of the datasheet; at TC = 100°C, usable IC drops to approximately 0.25 A. Designers must ensure adequate PCB copper area or heatsinking to maintain TC within limits for the target load.

Does MJD340TF have a built-in protection diode?

No, the MJD340TF does not integrate any protection diode. As a discrete NPN bipolar transistor, it requires an external flyback diode (e.g., 1N4007 or fast recovery type) across inductive loads such as relays or motors to clamp inductive kickback and prevent secondary breakdown. This is explicitly required in all relay driver and motor control applications using the MJD340TF.

What package type is used for MJD340TF and how is it mounted?

The MJD340TF uses the D-PAK (TO-252) surface-mount package with three leads and an exposed metal tab that connects internally to the Collector terminal. It is designed for reflow soldering onto PCBs with thermal pad connection to internal ground or heatsink plane. The lead-formed variant (no suffix) is optimized for pick-and-place assembly and requires no post-solder forming.

Can MJD340TF replace older Fairchild MJD340 devices?

Yes, the MJD340TF is the ON Semiconductor–branded successor to the original Fairchild MJD340, retaining identical electrical specifications, pinout, package dimensions, and thermal characteristics. The "TF" suffix denotes tape-and-reel packaging and conforms to ON Semiconductor's updated nomenclature following the Fairchild integration; no design changes or performance deviations are introduced.

What is the typical DC current gain (hFE) of MJD340TF at operating conditions?

The MJD340TF exhibits a DC current gain (hFE) ranging from 30 to 240 when measured at VCE = 10 V and IC = 50 mA. Gain varies significantly with collector current and temperature; at IC = 0.5 A, hFE typically falls to 20–40. Designers should verify base drive sufficiency across the full operating range, especially near maximum current, to ensure saturation.

MJD340TF Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
300 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Power - Max:
15 W
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

MJD340TF FAQ

1.How can I place an order for MJD340TF through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD340TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD340TF reliable?

The price and inventory of MJD340TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD340TF is usually 5 days.

3.What payment methods are accepted for MJD340TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD340TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD340TF?

MJD340TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD340TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD340TF?

For technical support, including MJD340TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD340TF requirements.

6.How does Aetrix verify that MJD340TF is sourced from the original manufacturer or authorized distributors?

All MJD340TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD340TF meets industry standards.

7.What is the process for return or replacement of MJD340TF?

All MJD340TF units undergo pre-shipment inspection (PSI). If there is an issue with MJD340TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD340TF part is unused and in its original packaging.

Return procedure for MJD340TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJD340TF Tags

  • MJD340TF
  • MJD340TF PDF
  • MJD340TF Datasheet
  • MJD340TF Specifications
  • MJD340TF Images
  • onsemi
  • onsemi MJD340TF
  • Buy MJD340TF
  • MJD340TF Price
  • MJD340TF Distributor
  • MJD340TF Supplier
  • MJD340TF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER