onsemi MJD350TF

Overview

MJD350TF from ON Semiconductor is a PNP epitaxial silicon power transistor designed for high-voltage switching and linear amplification in industrial power supplies, relay drivers, and motor control circuits; features -300 V V_CEO, -0.5 A DC collector current, 15 W collector dissipation at T_C = 25°C, h_FE range of 30–240 at -10 V V_CE/ -50 mA I_C, and D-PAK surface-mount package.

For engineers reviewing the MJD350TF datasheet, pinout, applications, or equivalent options, key selection considerations include safe operating area (SOA) compliance at high voltage, thermal derating above 25°C case temperature, base drive requirements for saturation, and compatibility with TO-252 footprint layouts in high-reliability power stages.

Technical Context

This PNP bipolar junction transistor operates in common-emitter configuration with fully specified sustaining voltage (-300 V V_CEO(sus)) and low leakage (≤ -0.1 mA I_CEO at -300 V V_CB). Its rugged SOA supports pulsed operation up to -0.75 A I_CP with ≤2% duty cycle and 300 µs pulse width.

Thermal design requires attention to case-to-ambient thermal resistance: 80°C/W at T_A = 25°C yields only 1.56 W usable dissipation without heatsinking, while junction temperature must remain ≤150°C under all operating conditions per absolute maximum ratings.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with gull-wing leads; thermally enhanced plastic body optimized for PCB heat spreading via exposed drain pad (Collector connected to tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage power transistor applications.

Compared with MJD350TF, MJD340TF offers reduced voltage rating but identical footprint and drive characteristics, while BDX53C provides higher current capacity in a legacy through-hole form factor-neither is pin-compatible, and both require layout or thermal redesign for substitution.

Availability

MJD350TF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and relay driver circuits requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for MJD350TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJD350TF belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for robust switching and linear operation in harsh industrial environments where reliability under voltage transients and thermal stress is critical.

FAQ

What is the maximum safe collector-emitter voltage for MJD350TF in continuous operation?

The MJD350TF has a rated V_CEO of -300 V, meaning it can safely block up to -300 V between collector and emitter under DC or continuous conditions at T_C = 25°C. Derating is required above 25°C case temperature per the power derating curve. Exceeding this rating risks avalanche breakdown and permanent damage. Always verify actual circuit stress margins using worst-case transient analysis for the MJD350TF.

Does MJD350TF have a built-in base-emitter resistor or protection diode?

No, the MJD350TF is a standard three-terminal PNP bipolar transistor with no integrated base resistors or protection diodes. External base current limiting and flyback diodes must be added per application requirements. This discrete architecture gives designers full control over switching speed and saturation depth but requires careful external bias network design for the MJD350TF.

Can MJD350TF be used in parallel for higher current handling?

Parallel operation of MJD350TF devices is not recommended due to mismatch in h_FE and V_BE characteristics, which causes current imbalance and thermal runaway. If higher current is needed, select a single higher-rated device such as the MJD353TF (-300 V, -1.5 A). For redundancy-critical systems, independent drive and current-sensing per MJD350TF channel are mandatory.

What is the thermal resistance from junction to case (θ_JC) for MJD350TF?

The MJD350TF has a typical junction-to-case thermal resistance (θ_JC) of 1.7°C/W when mounted on a 1-inch² 2-oz copper pad with thermal vias. This value assumes optimal solder coverage and PCB layout per ON Semiconductor's D-PAK mounting guidelines. Actual θ_JC depends on board stack-up and heatsinking; always measure junction temperature in situ for the MJD350TF under full load.

Is MJD350TF RoHS compliant and halogen-free?

Yes, the MJD350TF is RoHS compliant and halogen-free per ON Semiconductor's material declarations. It meets EU Directive 2011/65/EU and IEC 61249-2-21:2013 standards. Full compliance documentation, including substance declarations and test reports, is available on the ON Semiconductor website for the MJD350TF under part-specific environmental data sheets.