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onsemi MJD44H11-001
- Part No.:
- MJD44H11-001
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
MJD44H11-001.pdf
- Description:
- TRANS NPN 80V 8A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,660
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Product details
Overview
MJD44H11-001 from onsemi is an NPN silicon power transistor in DPAK (TO-252) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low 1 VCE(sat) at IC = 8 A / IB = 0.4 A and supports fast switching with td + tr = 300 ns, making it suitable for output stages in DC-DC switching regulators and linear power amplifiers.
For engineers reviewing the MJD44H11-001 datasheet, pinout, applications, or equivalent options, key selection criteria include its complementary pairing with MJD45H11, AEC-Q101 qualification (NJV variants), thermal resistance RθJC = 6.25 °C/W, and suitability for high-current driver circuits requiring robust SOA performance up to 150 °C junction temperature.
Technical Context
The MJD44H11-001 is a medium-power bipolar junction transistor optimized for linear and switching operation in power-conversion topologies. Its design emphasizes low saturation voltage and fast turn-on/turn-off characteristics, supported by fT = 85 MHz and Ccb = 45 pF at VCB = 10 V.
It operates within a −55 °C to +150 °C junction temperature range and features UL 94 V-0 compliant epoxy encapsulation. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, with ESD ratings of HBM Class 3B (≥8 kV) and MM Class C (≥200 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter blocking voltage under open-base conditions; defines upper limit for switch-mode or amplifier rail voltage. |
| IC (continuous) | 8 A - Continuous DC collector current capability at TC = 25 °C; requires heatsinking above ambient to sustain full rating. |
| VCE(sat) | 1 V max at IC = 8 A, IB = 0.4 A - Low conduction loss enables efficient power stage operation with minimal thermal rise. |
| fT | 85 MHz - Current-gain-bandwidth product indicating usable frequency range for small-signal amplification or high-speed switching control. |
| RθJC | 6.25 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement when mounted to PCB copper pour or metal-core substrate. |
| td + tr | 300 ns - Combined delay and rise time at IC = 5 A, IB1 = 0.5 A; enables switching frequencies up to ~300 kHz in hard-switched converters. |
| hFE | 60 min at VCE = 1 V, IC = 2 A - Sufficient DC gain for direct base drive in low-to-medium speed applications without external gain boosting. |
Pinout & Package
DPAK (TO-252-3) surface-mount package with exposed drain pad (pin 2 and 4 tied internally to collector); thermally enhanced for PCB copper pour mounting. Dimensions: 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; requires ≥0.4 A base drive for full 8 A collector conduction; base-emitter clamp diode not integrated. |
| 2 | Collector | Main high-current output terminal; electrically connected to exposed metal tab (pin 4) for thermal and electrical path to PCB ground plane or heatsink. |
| 3 | Emitter | Current return path; referenced to system ground in common-emitter configuration; must be routed with low-inductance trace for switching stability. |
| 4 | Collector | Second collector connection point; identical to pin 2 and internally bonded to same die region; used for mechanical reinforcement and dual thermal paths. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 1 V max at 8 A ensures <1.6 W conduction loss per device, reducing thermal load in parallel-output or high-duty-cycle designs. |
| Fast switching | 300 ns (td+tr) and 140 ns (tf) enable efficient operation in 100–300 kHz SMPS without excessive switching loss penalties. |
| Complementary pair | Matched with MJD45H11 (PNP) for push-pull, H-bridge, and Class AB amplifier outputs-simplifies layout and thermal balancing. |
| AEC-Q101 qualified | NJV-prefix variants meet automotive-grade reliability requirements including HTOL, TC, and ESD testing-valid for under-hood and body-control modules. |
| UL 94 V-0 epoxy | Flame-retardant encapsulation meets safety standards for industrial power supplies and medical auxiliary circuits where fire risk mitigation is mandated. |
Applications
| Switching Regulator Output Stage | Linear Audio Power Amplifier |
|---|---|
|
Use Scenario: High-current buck converter output switch operating at 200 kHz with 12 V input and 5 V/6 A output. IC Role / Device Role / Timing Role: NPN power switch controlling energy transfer to output inductor; driven by PWM controller via base resistor network. Use Value: Low 1 VCE(sat) minimizes dropout and improves efficiency; 8 A rating supports peak-load headroom; DPAK thermal performance sustains >75 °C case temperature. |
Use Scenario: Complementary emitter-follower output stage in 20 W Class AB audio amplifier driving 4 Ω speakers. IC Role / Device Role / Timing Role: High-current output transistor delivering speaker current; biased in linear region with matched MJD45H11 PNP. Use Value: hFE ≥60 at 2 A ensures stable bias control; SOA curve supports safe operation during transient clipping; 150 °C TJ rating accommodates sustained thermal stress. |
| DC Motor Driver Half-Bridge | Industrial AC/DC Converter Auxiliary Supply |
|
Use Scenario: 24 V, 5 A brushed DC motor control using discrete half-bridge with flyback protection. IC Role / Device Role / Timing Role: High-side NPN switch in totem-pole configuration; commutated with gate driver IC and freewheeling diode. Use Value: Fast 300 ns turn-on reduces shoot-through risk; 80 V VCEO withstands inductive kickback up to 60 V; RθJC = 6.25 °C/W allows direct PCB copper cooling. |
Use Scenario: 24 V auxiliary supply in 3 kW industrial rectifier, powering control logic and gate drivers. IC Role / Device Role / Timing Role: Series pass transistor in linear regulator topology, dissipating up to 15 W continuously. Use Value: 20 W TC-based power rating and 1.75 W TA rating define heatsink sizing; low VCE(sat) reduces dropout across wide input range (30–60 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD44H11T4G | Same die, DPAK package, tape-and-reel packaging (2,500 pcs); identical electrical specs and thermal performance. | No functional difference; selected for automated SMT assembly instead of rail packaging. | Choose MJD44H11T4G for high-volume production; MJD44H11-001 is rail-packaged for prototyping and low-volume builds. |
| STP16NF06L | N-channel MOSFET (60 V, 16 A, RDS(on) = 0.05 Ω); gate-driven vs. base-driven; no inherent second breakdown limit. | Better suited for high-frequency (>500 kHz) switching due to voltage-controlled operation; requires gate driver IC and lacks linear-region stability. | Select STP16NF06L when switching speed or gate-drive simplicity is prioritized over linear-mode fidelity or cost-sensitive BJT replacement. |
Compared with MJD44H11-001, MJD44H11T4G offers identical performance in tape-and-reel format for SMT lines, while STP16NF06L shifts architecture to MOSFET-based switching with lower conduction loss but higher gate-drive complexity and no linear gain control.
Availability
MJD44H11-001 is available at Aetrix Electronics and suitable for switching regulators, linear power amplifiers, and DC motor drivers requiring stable component supply across industrial, automotive, and embedded power systems.
Supply support for MJD44H11-001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJD44H11-001 belongs to onsemi's complementary power transistor family designed for robust, cost-effective discrete power switching and amplification in surface-mount applications demanding reliability and thermal resilience.
FAQ
What is the maximum continuous collector current rating for MJD44H11-001?
The MJD44H11-001 is rated for 8 A continuous collector current (IC) at case temperature TC = 25 °C. This rating assumes proper PCB copper pour or heatsink attachment to maintain junction temperature ≤150 °C. Derating applies above 25 °C at 0.16 W/°C for power dissipation and 0.014 W/°C for ambient-limited operation.
Does MJD44H11-001 have built-in base-emitter protection diodes?
No, the MJD44H11-001 does not integrate base-emitter clamp diodes. External protection-such as a reverse-biased Schottky diode across base-emitter-is recommended in inductive switching applications to prevent negative VBE exceeding −5 V and avoid device degradation.
Can MJD44H11-001 be used in linear amplifier configurations?
Yes, the MJD44H11-001 supports linear operation with verified Safe Operating Area (SOA) curves up to 150 °C junction temperature. Its hFE ≥60 at 2 A and low VCE(sat) make it suitable for Class AB audio output stages and precision series-pass regulators when properly heatsinked.
What is the thermal resistance from junction to case (RθJC) for MJD44H11-001?
The MJD44H11-001 has a maximum junction-to-case thermal resistance (RθJC) of 6.25 °C/W, measured under standard surface-mount conditions on minimum recommended PCB pad sizes. This value enables accurate heatsink sizing when the collector tab is soldered directly to a copper plane.
Is MJD44H11-001 pin-compatible with older D44H11 transistors?
Yes, the MJD44H11-001 is electrically and mechanically compatible with the legacy D44H11 through-hole device in terms of pin function and gain/saturation characteristics, though package differs (DPAK vs. TO-220). No circuit redesign is needed when migrating to surface-mount, but layout must accommodate DPAK footprint and thermal pad routing.
MJD44H11-001 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 85MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
MJD44H11-001 FAQ
1.How can I place an order for MJD44H11-001 through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD44H11-001 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD44H11-001 reliable?
The price and inventory of MJD44H11-001 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD44H11-001 is usually 5 days.
3.What payment methods are accepted for MJD44H11-001?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD44H11-001 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD44H11-001?
MJD44H11-001 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD44H11-001 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD44H11-001?
For technical support, including MJD44H11-001 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD44H11-001 requirements.
6.How does Aetrix verify that MJD44H11-001 is sourced from the original manufacturer or authorized distributors?
All MJD44H11-001 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD44H11-001 meets industry standards.
7.What is the process for return or replacement of MJD44H11-001?
All MJD44H11-001 units undergo pre-shipment inspection (PSI). If there is an issue with MJD44H11-001, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD44H11-001 part is unused and in its original packaging.
Return procedure for MJD44H11-001:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJD44H11-001 Tags
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