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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD44H11-1G

Name: MJD44H11-1G
Brand: onsemi
SKU: MJD44H11-1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD44H11-1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: MJD44H11-1G.pdf

Description:: TRANS NPN 80V 8A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJD44H11-1G from onsemi is an NPN silicon power transistor in IPAK (Case 369D) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W total power dissipation at TC = 25 °C. It delivers low V_CE(sat) of ≤1 V at I_C = 8 A / I_B = 0.4 A and fast switching with t_d + t_r ≤ 300 ns, enabling use in high-efficiency switching regulators and motor driver output stages.

For engineers reviewing the MJD44H11-1G datasheet, pinout, applications, or equivalent options, key selection criteria include its complementary PNP pairing with MJD45H11-1G, AEC-Q101 qualification for automotive-grade reliability, and validated thermal resistance R_JC = 6.25 °C/W for heatsink-integrated power stage designs.

Technical Context

This NPN bipolar junction transistor operates in linear and saturated switching modes with DC current gain h_FE ≥ 60 at I_C = 2 A and ≥ 40 at I_C = 4 A under V_CE = 1 V. Its f_T = 85 MHz supports moderate-frequency switching up to ~1–2 MHz in hard-switched topologies.

The device features a dual-collector configuration (pins 2 and 4 both connected to collector), emitter-base breakdown voltage V_EB = 5 V, and robust ESD tolerance (HBM Class 3B). Thermal design is constrained by R_JA = 71.4 °C/W when mounted on minimum recommended PCB pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum safe collector-emitter voltage before avalanche breakdown in open-base condition.
I_C (cont.)	8 A - Continuous DC collector current capability with adequate heatsinking at T_C = 25 °C.
V_CE(sat)	≤1 V @ I_C = 8 A, I_B = 0.4 A - Low saturation voltage minimizes conduction loss in switching applications.
f_T	85 MHz - Current-gain-bandwidth product defining usable frequency limit for small-signal amplification.
R_JC	6.25 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsinks or copper planes.
t_d + t_r	≤300 ns @ I_C = 5 A - Fast turn-on delay + rise time reduces switching losses in PWM-driven circuits.
h_FE	60 min @ I_C = 2 A - Sufficient DC gain for base-drive simplicity in medium-power linear or saturated switch designs.

Pinout & Package

IPAK package (Case 369D), surface-mount, Pb-free, UL 94 V-0 compliant epoxy body. Dimensions: 6.10 × 6.54 × 2.28 mm, 2.29 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires ≥0.4 A base drive for full saturation at 8 A collector current.
2	Collector	Main high-current output node; electrically tied to pin 4 for enhanced current handling and thermal path.
3	Emitter	Reference/return path for collector current; connects to ground or low-side return in common-emitter configurations.
4	Collector	Second collector terminal; paralleled internally or externally to reduce bond-wire inductance and improve thermal distribution.

Key Features

Feature	Design Value
Dual-collector terminals (pins 2 & 4)	Reduces effective current density per bond wire and improves thermal spreading to PCB copper.
Low V_CE(sat) ≤1 V at 8 A	Enables <1.6 W conduction loss at full load, critical for thermally constrained 20 W-class power stages.
AEC-Q101 qualified (NJV variants)	Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock.
Complementary pairing with MJD45H11-1G	Simplifies push-pull, H-bridge, and Class AB amplifier designs without discrete matching effort.
R_JA = 71.4 °C/W (min pad)	Defines worst-case ambient-referenced thermal performance; real-world layout can improve this with thermal vias and copper area.

Applications

Switching Regulator Output Stage	DC Motor Driver Half-Bridge
Use Scenario: High-current buck converter output switch operating at 100–500 kHz with 5–24 V input and 3–12 V output. IC Role / Device Role / Timing Role: NPN power switch controlling energy transfer into output inductor; driven by dedicated gate/base driver IC. Use Value: Low V_CE(sat) and fast t_d+t_r directly reduce total power loss, enabling >92% efficiency at 6 A load with minimal heatsink.	Use Scenario: Bidirectional 12 V DC motor control in automotive seat/mirror modules using discrete half-bridge topology. IC Role / Device Role / Timing Role: High-side NPN switch paired with MJD45H11-1G low-side PNP; controlled via isolated PWM signals. Use Value: Dual-collector construction and AEC-Q101 qualification ensure reliable operation across −40 to +125 °C ambient with no derating below 8 A.
Linear Audio Amplifier Driver	Industrial Power Supply Series Pass
Use Scenario: Output driver stage in 10 W Class AB audio amplifier feeding 4–8 Ω speakers from ±15 V rails. IC Role / Device Role / Timing Role: Medium-power NPN emitter-follower delivering peak current >3 A during transients; biased in linear region. Use Value: h_FE ≥ 60 at 2 A ensures stable bias point and low distortion; R_JC = 6.25 °C/W allows direct mounting to chassis heatsink.	Use Scenario: Adjustable 0–30 V, 0–5 A bench power supply using series pass transistor with op-amp feedback control. IC Role / Device Role / Timing Role: Linear pass element dissipating up to 15 W continuously; regulated by error amplifier and current sense. Use Value: 20 W power rating at T_C = 25 °C and 1.75 W at T_A = 25 °C define safe operating area boundaries for thermal design and foldback protection.

Switching Regulator Output Stage

DC Motor Driver Half-Bridge

Use Scenario: High-current buck converter output switch operating at 100–500 kHz with 5–24 V input and 3–12 V output.

IC Role / Device Role / Timing Role: NPN power switch controlling energy transfer into output inductor; driven by dedicated gate/base driver IC.

Use Value: Low V_CE(sat) and fast t_d+t_r directly reduce total power loss, enabling >92% efficiency at 6 A load with minimal heatsink.

Use Scenario: Bidirectional 12 V DC motor control in automotive seat/mirror modules using discrete half-bridge topology.

IC Role / Device Role / Timing Role: High-side NPN switch paired with MJD45H11-1G low-side PNP; controlled via isolated PWM signals.

Use Value: Dual-collector construction and AEC-Q101 qualification ensure reliable operation across −40 to +125 °C ambient with no derating below 8 A.

Linear Audio Amplifier Driver

Industrial Power Supply Series Pass

Use Scenario: Output driver stage in 10 W Class AB audio amplifier feeding 4–8 Ω speakers from ±15 V rails.

IC Role / Device Role / Timing Role: Medium-power NPN emitter-follower delivering peak current >3 A during transients; biased in linear region.

Use Value: h_FE ≥ 60 at 2 A ensures stable bias point and low distortion; R_JC = 6.25 °C/W allows direct mounting to chassis heatsink.

Use Scenario: Adjustable 0–30 V, 0–5 A bench power supply using series pass transistor with op-amp feedback control.

IC Role / Device Role / Timing Role: Linear pass element dissipating up to 15 W continuously; regulated by error amplifier and current sense.

Use Value: 20 W power rating at T_C = 25 °C and 1.75 W at T_A = 25 °C define safe operating area boundaries for thermal design and foldback protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD44H11G	DPAK (Case 369C) package; identical electrical specs but different thermal interface and footprint.	Requires PCB redesign due to smaller DPAK body and single-collector pinout (no pin 4).	Select when board space is constrained and thermal path relies on solder pad conduction rather than heatsink mounting.
BD249C	TO-126 package; V_CEO = 80 V, I_C = 10 A, but V_CE(sat) = 1.2 V @ 8 A and slower switching (t_f = 300 ns).	Limited to lower-frequency (<100 kHz) linear or switching applications where higher saturation loss is acceptable.	Choose for legacy through-hole designs or cost-sensitive non-automotive applications where AEC-Q101 is not required.

Compared with MJD44H11G, the MJD44H11-1G offers superior thermal management via IPAK's larger copper exposure and dual-collector layout, while BD249C trades off speed and saturation performance for TO-126 mechanical compatibility and broader distributor availability.

Availability

MJD44H11-1G is available at Aetrix Electronics and suitable for switching regulators, DC motor drivers, and industrial linear power supplies requiring stable component supply, automotive-grade reliability, and surface-mount manufacturability.

Supply support for MJD44H11-1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJD44H11-1G belongs to onsemi's Complementary Power Transistors family, engineered for robust, high-current switching and amplification in harsh-environment power conversion systems.

FAQ

What is the maximum continuous collector current rating for MJD44H11-1G?

The MJD44H11-1G is rated for 8 A continuous collector current (I_C) when case temperature T_C is maintained at 25 °C. Derating applies above 25 °C at 0.16 W/°C for power dissipation, and actual achievable current depends on PCB copper area, heatsinking, and ambient conditions. At T_A = 25 °C with minimum pad layout, the safe continuous current drops to approximately 1.3 A due to higher R_JA.

Does MJD44H11-1G have AEC-Q101 qualification?

The base MJD44H11-1G is not AEC-Q101 qualified; however, the NJVMJD44H11-1G variant-identical in all electrical and mechanical specifications-is explicitly AEC-Q101 qualified and PPAP capable. This distinction is confirmed in the official onsemi datasheet ordering table and applies to automotive applications requiring certified reliability.

How are pins 2 and 4 configured in MJD44H11-1G?

Pins 2 and 4 of the MJD44H11-1G are both internal collector terminals, electrically connected and intended for parallel routing on the PCB. This dual-collector design lowers effective thermal resistance and current density, improving reliability in high-current switching applications. The official marking diagram and mechanical outline confirm this configuration for Case 369D (IPAK).

What is the typical DC current gain (h_FE) of MJD44H11-1G at operating conditions?

The MJD44H11-1G exhibits h_FE ≥ 60 at V_CE = 1 V and I_C = 2 A, and ≥ 40 at V_CE = 1 V and I_C = 4 A. These values are guaranteed minimums per datasheet; typical units measure higher (e.g., 80–120 at 2 A), supporting simplified base-drive circuitry without active current limiting in many power stage implementations.

Can MJD44H11-1G be used as a direct replacement for MJD44H11G?

No-MJD44H11-1G (IPAK, Case 369D) and MJD44H11G (DPAK, Case 369C) differ in package size, pinout, and thermal characteristics. While electrically identical, the IPAK version has dual collectors (pins 2 & 4), whereas DPAK has only one collector (pin 2). PCB layout, thermal interface, and assembly process must be requalified for interchangeability.

MJD44H11-1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 1µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 1.75 W

Frequency - Transition:: 85MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

MJD44H11-1G FAQ

1.How can I place an order for MJD44H11-1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD44H11-1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD44H11-1G reliable?

The price and inventory of MJD44H11-1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD44H11-1G is usually 5 days.

3.What payment methods are accepted for MJD44H11-1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD44H11-1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD44H11-1G?

MJD44H11-1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD44H11-1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD44H11-1G?

For technical support, including MJD44H11-1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD44H11-1G requirements.

6.How does Aetrix verify that MJD44H11-1G is sourced from the original manufacturer or authorized distributors?

All MJD44H11-1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD44H11-1G meets industry standards.

7.What is the process for return or replacement of MJD44H11-1G?

All MJD44H11-1G units undergo pre-shipment inspection (PSI). If there is an issue with MJD44H11-1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD44H11-1G part is unused and in its original packaging.

Return procedure for MJD44H11-1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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