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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD44H11T4

Name: MJD44H11T4
Brand: onsemi
SKU: MJD44H11T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD44H11T4

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: MJD44H11T4.pdf

Description:: TRANS NPN 80V 8A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJD44H11T4 from onsemi is an NPN silicon power transistor in DPAK (TO-252) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low V_CE(sat) of ≤1 V at I_C = 8 A / I_B = 0.4 A and fast switching with t_d + t_r ≤ 300 ns, making it suitable for output stages in DC-DC converters and linear power amplifiers.

For engineers reviewing the MJD44H11T4 datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, complementary pairing with MJD45H11, thermal resistance R_θJC = 6.25 °C/W, and Pb-free RoHS-compliant DPAK-3 footprint for high-reliability automotive and industrial power switching designs.

Technical Context

The MJD44H11T4 is a medium-power bipolar junction transistor optimized for linear and switching operation in high-current, moderate-voltage applications. Its design emphasizes low saturation voltage and fast turn-on/turn-off characteristics, supported by h_FE ≥ 60 at I_C = 2 A and f_T = 85 MHz under specified bias conditions.

Thermally, it features a junction-to-case thermal resistance of 6.25 °C/W and is rated for operation from −55 °C to +150 °C. The device uses a DPAK-3 package with dual collector terminals (pins 2 and 4), enabling enhanced current handling and thermal path efficiency in PCB-mounted power circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum safe collector-emitter blocking voltage in open-base configuration.
I_C (cont.)	8 A - Continuous collector current capability at T_C = 25 °C; derates linearly above 25 °C.
P_D @ T_C = 25 °C	20 W - Total power dissipation limit when mounted on minimum recommended copper pad area.
V_CE(sat)	≤1 V - Low saturation voltage at I_C = 8 A / I_B = 0.4 A, minimizing conduction loss in switching applications.
h_FE	≥60 - DC current gain at V_CE = 1 V, I_C = 2 A, ensuring stable base drive requirements.
f_T	85 MHz - Current-gain-bandwidth product at I_C = 0.5 A, V_CE = 10 V, supporting high-frequency switching.
R_θJC	6.25 °C/W - Junction-to-case thermal resistance, critical for heatsink interface design in power stages.

Pinout & Package

Package: DPAK-3 (Case 369C), surface-mount, Pb-free, UL 94 V-0 compliant epoxy body (6.10 × 6.54 × 2.28 mm). Dual collector terminals enable parallel current paths and improved thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode; requires ~0.4 A base current to saturate 8 A collector current.
2	Collector	Main high-current output terminal; electrically tied to pin 4 for doubled current capacity.
3	Emiter	Reference and return path for collector current; connected to ground or low-side reference in common-emitter configurations.
4	Collector	Second collector terminal; internally bonded to pin 2 to reduce package inductance and improve thermal spreading.

Key Features

Feature	Design Value
Low V_CE(sat)	≤1 V at I_C = 8 A ensures <1.6 W conduction loss per device in saturated switching mode.
Fast switching speed	t_d + t_r ≤ 300 ns enables efficient operation up to ~300 kHz in hard-switched topologies.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HBM ESD (3B), and PPAP readiness.
Complementary PNP pairing	Designed to match MJD45H11 for push-pull and bridge configurations without gain or timing mismatch.
Dual collector terminals	Pins 2 and 4 provide redundant current paths and lower effective thermal resistance to PCB copper pour.

Applications

Switching Regulator Output Stage	Linear Audio Power Amplifier
Use Scenario: High-current, medium-voltage switching in non-isolated buck or boost converters for industrial control modules. IC Role / Device Role / Timing Role: NPN power switch operating in hard-switched mode with gate driver-controlled base current. Use Value: 80 V V_CEO and 8 A I_C support 48 V input systems delivering >30 W output; low V_CE(sat) reduces thermal load on heatsink.	Use Scenario: Class-AB output stage in 20–50 W audio amplifiers for public address or instrumentation systems. IC Role / Device Role / Timing Role: Linear-mode current source delivering amplified signal to low-impedance speaker loads. Use Value: High h_FE ≥ 60 and wide SOA ensure stable biasing and distortion-free operation across temperature; R_θJC = 6.25 °C/W supports compact heatsinking.
Automotive DC-DC Converter	Motor Driver Half-Bridge
Use Scenario: 12 V to 5 V/3.3 V step-down converter in engine control units (ECUs) requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: Primary switching transistor in synchronous or diode-based buck topology. Use Value: NJV prefix and PPAP capability confirm automotive qualification; 150 °C max junction temperature accommodates under-hood thermal environments.	Use Scenario: High-side or low-side switch in brushed DC motor drivers for HVAC actuators or seat controls. IC Role / Device Role / Timing Role: Discrete power switch controlled by microcontroller GPIO or dedicated gate driver. Use Value: Fast t_f ≤ 140 ns minimizes shoot-through risk in half-bridge dead-time management; dual collector pins simplify PCB layout for high-current traces.

Switching Regulator Output Stage

Linear Audio Power Amplifier

Use Scenario: High-current, medium-voltage switching in non-isolated buck or boost converters for industrial control modules.

IC Role / Device Role / Timing Role: NPN power switch operating in hard-switched mode with gate driver-controlled base current.

Use Value: 80 V V_CEO and 8 A I_C support 48 V input systems delivering >30 W output; low V_CE(sat) reduces thermal load on heatsink.

Use Scenario: Class-AB output stage in 20–50 W audio amplifiers for public address or instrumentation systems.

IC Role / Device Role / Timing Role: Linear-mode current source delivering amplified signal to low-impedance speaker loads.

Use Value: High h_FE ≥ 60 and wide SOA ensure stable biasing and distortion-free operation across temperature; R_θJC = 6.25 °C/W supports compact heatsinking.

Automotive DC-DC Converter

Motor Driver Half-Bridge

Use Scenario: 12 V to 5 V/3.3 V step-down converter in engine control units (ECUs) requiring AEC-Q101 compliance.

IC Role / Device Role / Timing Role: Primary switching transistor in synchronous or diode-based buck topology.

Use Value: NJV prefix and PPAP capability confirm automotive qualification; 150 °C max junction temperature accommodates under-hood thermal environments.

Use Scenario: High-side or low-side switch in brushed DC motor drivers for HVAC actuators or seat controls.

IC Role / Device Role / Timing Role: Discrete power switch controlled by microcontroller GPIO or dedicated gate driver.

Use Value: Fast t_f ≤ 140 ns minimizes shoot-through risk in half-bridge dead-time management; dual collector pins simplify PCB layout for high-current traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD44H11RLG	Same die, identical electrical specs, but supplied in 1,800-unit tape-and-reel vs. 2,500-unit tape-and-reel for MJD44H11T4.	No functional difference; suited for lower-volume prototyping or mixed-BOM production runs.	Select MJD44H11RLG if reel size must match legacy line feeders or smaller batch requirements.
STN8300	80 V V_CEO, 8 A I_C, but higher V_CE(sat) (≤1.5 V) and lower f_T (50 MHz); TO-252 package, RoHS-compliant.	Acceptable for less demanding switching frequencies (<100 kHz) where saturation loss margin exists.	Choose STN8300 only if cost sensitivity outweighs efficiency or frequency needs; not drop-in due to different gain and capacitance profiles.

Compared with MJD44H11T4, MJD44H11RLG offers identical performance in a smaller reel format, while STN8300 trades higher conduction loss and reduced bandwidth for broader distributor availability-making MJD44H11T4 optimal for thermally constrained, high-efficiency automotive and industrial switching designs.

Availability

MJD44H11T4 is available at Aetrix Electronics and suitable for automotive ECUs, industrial DC-DC converters, and audio amplifier output stages requiring stable component supply, AEC-Q101 qualification, and long-term lifecycle continuity.

Supply support for MJD44H11T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJD44H11T4 belongs to onsemi's complementary power transistor family designed specifically for robust, high-current switching and linear amplification in harsh-environment applications where reliability, thermal performance, and automotive qualification are mandatory.

FAQ

What is the maximum junction temperature rating for the MJD44H11T4?

The MJD44H11T4 has an operating junction temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 stress testing and applies under all specified electrical conditions. Exceeding +150 °C risks permanent degradation of h_FE and increased leakage; thermal design must maintain T_J ≤ 150 °C using the published R_θJC = 6.25 °C/W and PCB copper thermal mass. The MJD44H11T4 datasheet confirms this limit in the Maximum Ratings table.

Is the MJD44H11T4 pin-compatible with the MJD44H11G or MJD44H11RLG?

Yes-the MJD44H11T4, MJD44H11G, and MJD44H11RLG share identical DPAK-3 (Case 369C) mechanical dimensions, pinout (Base–Collector–Emitter–Collector), and silicon die. Differences are limited to packaging format (rail vs. tape-and-reel) and reel quantity (75, 1,800, or 2,500 units). No PCB layout change is required when substituting between these variants. All three part numbers deliver identical electrical performance for the MJD44H11T4.

Does the MJD44H11T4 require a heatsink in typical applications?

Yes-when dissipating >1.5 W continuously, a heatsink is strongly recommended. At full 8 A load with V_CE(sat) ≈ 1 V, conduction loss reaches 8 W; even with R_θJA = 71.4 °C/W, ambient temperature rise would exceed safe limits without thermal management. The MJD44H11T4's R_θJC = 6.25 °C/W is optimized for direct mounting to a copper plane or external heatsink. Derating curves in the MJD44H11T4 datasheet show usable power drops sharply above T_C = 25 °C.

What is the meaning of the "NJV" prefix in NJVMJD44H11T4G*?

The "NJV" prefix identifies a version of the MJD44H11T4 manufactured under onsemi's automotive-specific quality system, with unique site and process controls, AEC-Q101 qualification, and PPAP documentation readiness. It does not alter electrical specifications but guarantees traceability, extended temperature validation, and failure rate reporting required for Tier-1 automotive supply chains. The MJD44H11T4 itself carries the NJV prefix in its full ordering code NJVMJD44H11T4G*.

Can the MJD44H11T4 be used in avalanche mode?

No-the MJD44H11T4 is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area (SOA) curve in the datasheet defines only forward-bias limits (I_C vs. V_CE) under defined pulse conditions. Avalanche energy ratings, ruggedness testing, or secondary breakdown immunity are not specified. For circuits subject to inductive switching transients, external clamping (e.g., TVS diodes or snubbers) is required. The MJD44H11T4 datasheet explicitly omits avalanche parameters.

MJD44H11T4 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 1µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 2A, 1V

Power - Max:: 20 W

Frequency - Transition:: 85MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

MJD44H11T4 FAQ

1.How can I place an order for MJD44H11T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD44H11T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD44H11T4 reliable?

The price and inventory of MJD44H11T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD44H11T4 is usually 5 days.

3.What payment methods are accepted for MJD44H11T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD44H11T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD44H11T4?

MJD44H11T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD44H11T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD44H11T4?

For technical support, including MJD44H11T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD44H11T4 requirements.

6.How does Aetrix verify that MJD44H11T4 is sourced from the original manufacturer or authorized distributors?

All MJD44H11T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD44H11T4 meets industry standards.

7.What is the process for return or replacement of MJD44H11T4?

All MJD44H11T4 units undergo pre-shipment inspection (PSI). If there is an issue with MJD44H11T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD44H11T4 part is unused and in its original packaging.

Return procedure for MJD44H11T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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