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onsemi MJD44H11T5G
- Part No.:
- MJD44H11T5G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD44H11T5G.pdf
- Description:
- TRANS NPN 80V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,374
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Product details
Overview
MJD44H11T5G from onsemi is an NPN silicon power transistor in DPAK (TO-252) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A / IB = 0.4 A and fast switching with td + tr ≤ 300 ns, making it suitable for output stages in DC-DC switching regulators and motor driver circuits.
For engineers reviewing the MJD44H11T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its 80 V VCEO, 8 A IC, thermal resistance RJC = 6.25 °C/W, AEC-Q101 qualification (NJV variant), and complementary pairing with MJD45H11 for H-bridge designs.
Technical Context
This NPN bipolar junction transistor operates in linear and saturated switching modes, optimized for high-current, medium-voltage power control. Its design emphasizes low saturation voltage and fast turn-on/turn-off times-critical for minimizing conduction and switching losses in pulse-width modulated (PWM) applications.
The device features a thermally efficient DPAK package with exposed collector tab for direct heatsinking, enabling operation up to +150 °C junction temperature. Its hFE ranges from 40–60 at IC = 2–4 A, supporting stable base-driven switching without requiring excessive drive current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter blocking voltage under open-base conditions; defines upper limit for switch-mode supply rail compatibility. |
| IC (continuous) | 8 A - Continuous collector current capability at TC = 25 °C; determines maximum load current in driver/output stage designs. |
| PD @ TC = 25 °C | 20 W - Total power dissipation when case temperature is maintained at 25 °C; requires external heatsinking for sustained operation. |
| VCE(sat) | ≤1 V @ IC = 8 A, IB = 0.4 A - Low saturation voltage reduces conduction loss and self-heating during on-state operation. |
| fT | 85 MHz - Current-gain bandwidth product; supports reliable switching up to ~10–15 MHz with appropriate drive and layout. |
| RJC | 6.25 °C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise above heatsink temperature. |
| hFE | 40–60 @ IC = 2–4 A - DC current gain range defining required base drive current for full saturation in switching applications. |
Pinout & Package
DPAK-3 (Case 369C) surface-mount package with exposed collector tab for thermal management and mechanical anchoring. Dimensions: 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires ≥0.4 A base current to fully saturate at 8 A collector load. |
| 2 | Collector | Main high-current output terminal; electrically connected to exposed metal tab for heatsinking and low-inductance return path. |
| 3 | Emiter | Reference/return terminal for collector current; forms common-emitter configuration with base drive referenced to emitter potential. |
| 4 | Collector | Second collector connection-internally tied to Pin 2-to improve current sharing and reduce package inductance in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | ≤1 V at 8 A ensures <1 W conduction loss per device, reducing thermal burden in high-duty-cycle applications. |
| Fast switching | td + tr ≤ 300 ns and tf ≤ 140 ns enable efficient operation in 100 kHz–1 MHz PWM converters without excessive switching loss. |
| AEC-Q101 qualified (NJV variant) | NJVMJD44H11 variants meet automotive-grade reliability requirements including temperature cycling, HTOL, and ESD robustness. |
| Complementary PNP pairing | Designed as half of matched NPN/PNP pair with MJD45H11, simplifying push-pull and H-bridge driver design with balanced gain and timing. |
| Pb-free, RoHS-compliant | Meets global environmental regulations; compatible with lead-free reflow profiles up to 260 °C peak soldering temperature. |
Applications
| Switching Regulator Output Stage | DC Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: Used as the high-side or low-side switch in non-synchronous buck or boost converter output stages operating at 100–500 kHz. IC Role / Device Role / Timing Role: Power switching transistor controlling energy transfer between inductor and load; operates in saturated on/off states with defined dead-time margins. Use Value: 80 V rating supports 48 V industrial bus systems; low VCE(sat) minimizes I²R loss at 8 A peak load current. |
Use Scenario: Configured as one leg of a half-bridge driving brushed DC motors in automotive HVAC actuators or industrial positioning systems. IC Role / Device Role / Timing Role: High-current NPN switch delivering bidirectional current flow when paired with MJD45H11 PNP in complementary topology. Use Value: Matched fT (85 MHz) and switching times with MJD45H11 ensure symmetrical turn-on/turn-off behavior, reducing shoot-through risk. |
| Linear Power Amplifier Driver | Industrial Relay/Solenoid Driver |
|
Use Scenario: Employed in Class AB audio or precision analog output stages requiring >5 A peak current into reactive loads. IC Role / Device Role / Timing Role: Linear-mode power transistor biased in active region to deliver controlled current proportional to input signal. Use Value: hFE stability across −55 °C to +150 °C enables predictable biasing over wide ambient temperature ranges. |
Use Scenario: Driving high-inrush inductive loads such as 24 V solenoid valves or contactor coils in PLC I/O modules. IC Role / Device Role / Timing Role: Saturated-switch driver providing low-impedance path to ground for coil current, with flyback diode integration support. Use Value: 16 A peak current rating accommodates 3× inrush surges; fast fall time (<140 ns) limits voltage spikes during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK80ZFP | 800 V, 8 A MOSFET in TO-220FP; gate-driven, no base current required; RDS(on) = 1.2 Ω vs. bipolar VCE(sat). | Better for high-voltage, low-duty-cycle switching; unsuitable for linear mode or high-frequency BJT-style drive. | Select if replacing BJT with MOSFET topology and needing higher voltage margin or zero gate current. |
| MJD127G | 80 V, 4 A NPN in DPAK; lower IC rating, higher hFE (60–120); same footprint but reduced thermal capacity. | Suitable for <4 A loads where space constraints prevent larger packages; not drop-in for 8 A designs. | Choose only for derated applications where 4 A continuous current suffices and thermal budget allows. |
Compared with STP8NK80ZFP and MJD127G, the MJD44H11T5G provides optimal balance of 8 A current handling, 80 V rating, and DPAK thermal performance for cost-sensitive, base-driven power switching-without requiring gate drivers or sacrificing linear-mode capability.
Availability
MJD44H11T5G is available at Aetrix Electronics and suitable for switching regulators, motor drivers, and industrial relay control requiring stable component supply and long-term manufacturability assurance.
Supply support for MJD44H11T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The MJD44H11T5G belongs to onsemi's complementary power transistor family designed for robust, high-current switching in surface-mount power conversion and motor control applications.
FAQ
What is the maximum junction temperature rating for MJD44H11T5G?
The MJD44H11T5G has an operating junction temperature range of −55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of the official datasheet (Rev. 22, December 2025). Exceeding +150 °C risks permanent degradation of hFE and increased leakage currents. Thermal design must ensure TJ remains within this limit under worst-case power dissipation and ambient conditions.
Is MJD44H11T5G pin-compatible with MJD44H11G or MJD44H11RLG?
Yes, MJD44H11T5G shares identical DPAK-3 (Case 369C) package dimensions, pinout (Base–Collector–Emitter–Collector), and mechanical footprint with MJD44H11G and MJD44H11RLG. All three use the same lead frame, terminal assignments, and thermal pad layout-enabling PCB reuse across tape-and-reel (T5G/T4G/RLG) and rail (G) variants without layout changes.
Does MJD44H11T5G support linear (analog) operation, or is it intended only for switching?
The MJD44H11T5G is explicitly characterized for both switching and linear operation. Electrical specifications include hFE curves across collector currents and temperatures (Figures 4–7), VCE(sat) and VBE(sat) data (Figures 8–11), and Safe Operating Area (SOA) plots (Figure 2)-all confirming validated linear-mode use in Class AB amplifiers and precision current sources.
What is the ESD robustness rating for MJD44H11T5G?
The MJD44H11T5G is rated for Human Body Model (HBM) ESD per ANSI/ESDA/JEDEC JS-001 at Class 3B (≥8 kV). This value is specified in the Maximum Ratings table on page 1 of the datasheet. No Machine Model (MM) rating is published-designers should implement standard ESD handling protocols during assembly and test.
Can MJD44H11T5G be used in automotive applications?
The NJV-prefix variant (e.g., NJVMJD44H11T4G) is AEC-Q101 qualified and PPAP capable for automotive use, but the standard MJD44H11T5G is not certified. While MJD44H11T5G shares identical die and package construction, only NJV-marked units undergo automotive-specific stress testing and traceability controls-making them the required choice for safety-critical or Tier 1 automotive designs.
MJD44H11T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 85MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD44H11T5G FAQ
1.How can I place an order for MJD44H11T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD44H11T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD44H11T5G reliable?
The price and inventory of MJD44H11T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD44H11T5G is usually 5 days.
3.What payment methods are accepted for MJD44H11T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD44H11T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD44H11T5G?
MJD44H11T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD44H11T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD44H11T5G?
For technical support, including MJD44H11T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD44H11T5G requirements.
6.How does Aetrix verify that MJD44H11T5G is sourced from the original manufacturer or authorized distributors?
All MJD44H11T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD44H11T5G meets industry standards.
7.What is the process for return or replacement of MJD44H11T5G?
All MJD44H11T5G units undergo pre-shipment inspection (PSI). If there is an issue with MJD44H11T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD44H11T5G part is unused and in its original packaging.
Return procedure for MJD44H11T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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