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onsemi MJD44H11TF
- Part No.:
- MJD44H11TF
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD44H11TF.pdf
- Description:
- TRANS NPN 80V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,485
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Product details
Overview
MJD44H11TF from onsemi is an NPN silicon power transistor in DPAK (TO-252) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low 1 VCE(sat) at IC = 8 A / IB = 0.4 A and supports fast switching with td + tr = 300 ns, making it suitable for output stages in DC-DC switching regulators and linear power amplifiers.
For engineers reviewing the MJD44H11TF datasheet, pinout, applications, or equivalent options, key selection criteria include its complementary PNP pairing with MJD45H11, AEC-Q101 qualification (NJV variants), thermal resistance of 6.25 °C/W (junction-to-case), and suitability for high-current driver circuits requiring stable gain (hFE ≥ 60 at IC = 2 A).
Technical Context
This NPN bipolar junction transistor operates in linear and saturated switching modes, with DC current gain (hFE) specified from 60 (IC = 2 A) down to 40 (IC = 4 A) at VCE = 1 V. Its safe operating area (SOA) is defined up to 150 °C peak junction temperature, constrained by both thermal limits and second breakdown under pulsed conditions.
Switching performance is characterized by 300 ns combined delay+rise time and 140 ns fall time at IC = 5 A with base drive of 0.5 A, while dynamic parameters include fT = 85 MHz and Ccb = 45 pF at VCB = 10 V - confirming suitability for medium-frequency power control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum blocking voltage between collector and emitter with base open; defines upper limit for switch-off voltage rating in regulator topologies. |
| IC (cont.) | 8 A - Continuous DC collector current capability at TC = 25 °C; determines maximum sustained load drive without derating. |
| VCE(sat) | 1 V - Saturation voltage at IC = 8 A / IB = 0.4 A; directly impacts conduction loss and thermal rise in switching applications. |
| hFE | 60 min - DC current gain at IC = 2 A / VCE = 1 V; sets required base drive current for reliable saturation in driver designs. |
| fT | 85 MHz - Current-gain-bandwidth product; indicates usable frequency range for small-signal amplification or high-speed switching control. |
| RθJC | 6.25 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted on minimum recommended PCB copper area. |
| td + tr | 300 ns - Combined delay and rise time at IC = 5 A / IB1 = 0.5 A; defines minimum achievable switching period in PWM circuits. |
Pinout & Package
DPAK (TO-252-3) surface-mount package with exposed drain pad (pin 2 and 4 tied internally to collector); dimensions 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm; RoHS-compliant, Pb-free, UL 94 V-0 rated epoxy.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires ~0.4 A base current to saturate 8 A collector current, with VBE(sat) ≤ 1.5 V. |
| 2 | Collector | Main high-current output node; electrically connected to pin 4 and thermally coupled to exposed copper pad for heat transfer. |
| 3 | Emitter | Reference/return path for collector current; must be routed with low-inductance layout to minimize switching overshoot. |
| 4 | Collector | Second collector connection point; used for mechanical stability and enhanced thermal conduction to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 1 V at 8 A ensures <1.6 W conduction loss per device, reducing thermal stress in parallel-output or high-duty-cycle designs. |
| Fast switching | 300 ns delay+rise and 140 ns fall time enable operation up to ~300 kHz in hard-switched converters without excessive switching loss. |
| Complementary pairing | Matched with MJD45H11 (PNP) for push-pull, H-bridge, or Class AB amplifier outputs - simplifying bias network design and thermal balancing. |
| AEC-Q101 qualified | NJV-prefix variants meet automotive-grade reliability requirements including temperature cycling, HTOL, and ESD robustness (HBM 3B). |
| DPAK thermal performance | 6.25 °C/W RθJC allows >15 W dissipation with modest heatsinking - superior to TO-220 equivalents in space-constrained layouts. |
Applications
| Switching Regulator Output Stage | Linear Audio Power Amplifier |
|---|---|
|
Use Scenario: High-current buck converter output switch handling 5–8 A loads at 24–48 V input. IC Role / Device Role / Timing Role: NPN power switch controlling energy transfer to output inductor; driven by PWM controller with base resistor network. Use Value: Low 1 VCE(sat) minimizes conduction loss (<8 W at 8 A), while 85 MHz fT supports clean gate drive edge integrity at 200–300 kHz switching frequencies. |
Use Scenario: Complementary emitter-follower output stage in 20–50 W audio amplifiers driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: Linear-mode current booster delivering peak output current; biased in Class AB to reduce crossover distortion. Use Value: hFE ≥ 60 at 2 A ensures stable current gain across audio band, and 80 V VCEO accommodates ±35 V rails with headroom for transient spikes. |
| Motor Driver Half-Bridge | Industrial DC Power Supply |
|
Use Scenario: Upper-side switch in 24 V brushed DC motor H-bridge with 5–7 A stall current. IC Role / Device Role / Timing Role: High-side NPN switch controlled via charge-pump or level-shifted base drive; paired with MJD45H11 as low-side. Use Value: 300 ns td+tr enables precise PWM timing control, and 16 A ICM peak rating handles motor startup surges without secondary breakdown. |
Use Scenario: Series pass element or foldback current limiter in programmable lab bench supplies delivering 0–30 V / 0–5 A. IC Role / Device Role / Timing Role: Linear-regulation transistor dissipating up to 15 W during constant-current mode or overvoltage protection. Use Value: 20 W TC-based power rating and 6.25 °C/W RθJC allow direct mounting to aluminum chassis, eliminating need for discrete heatsinks in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD44H11T4G | Same die, identical electrical specs; differs only in packaging format (2,500 pcs tape-and-reel vs. tube for TF). | No functional difference; selected for automated SMT assembly rather than manual or low-volume prototyping. | Choose MJD44H11T4G for production line compatibility; MJD44H11TF remains optimal for engineering samples and small-batch builds. |
| STGD44H11 | Pin-compatible DPAK NPN with VCEO = 80 V, IC = 8 A, but higher VCE(sat) = 1.2 V and lower fT = 60 MHz. | Suitable for lower-frequency switching where saturation loss margin is acceptable, but not recommended for >200 kHz designs. | Select STGD44H11 only if supply chain constraints require STMicroelectronics sourcing; verify SOA curves match thermal profile of target design. |
Compared with MJD44H11TF, MJD44H11T4G offers identical performance in automated manufacturing contexts, while STGD44H11 trades 0.2 V higher saturation voltage and 25 MHz lower bandwidth for alternate supplier availability - requiring revalidation of thermal and switching-loss margins.
Availability
MJD44H11TF is available at Aetrix Electronics and suitable for switching regulators, linear power amplifiers, and motor driver half-bridges requiring stable component supply with automotive-grade traceability and long-term lifecycle support.
Supply support for MJD44H11TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJD44H11TF belongs to onsemi's complementary power transistor family designed for robust, high-current switching and amplification in surface-mount power systems - emphasizing thermal efficiency, AEC-Q101 compliance, and design simplicity through matched NPN/PNP pairs.
FAQ
What is the maximum continuous collector current rating for MJD44H11TF?
The MJD44H11TF is rated for 8 A continuous collector current at case temperature TC = 25 °C. Derating applies above 25 °C at 0.16 W/°C, limiting usable current in high-temperature environments. This rating assumes proper PCB copper area per datasheet recommendations to maintain thermal resistance at 6.25 °C/W.
Does MJD44H11TF have automotive qualification?
The standard MJD44H11TF is not AEC-Q101 qualified; however, onsemi offers NJVMJD44H11G and NJVMJD44H11RLG variants with NJV prefix that are fully AEC-Q101 qualified and PPAP capable. These share identical electrical specifications but include additional automotive-specific testing and traceability controls.
What is the pin configuration of MJD44H11TF in the DPAK package?
MJD44H11TF uses DPAK (TO-252-3) package with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter, and pin 4 = Collector (internally tied to pin 2). The dual-collector configuration enhances thermal conduction to the PCB copper pour and improves mechanical stability during reflow soldering.
How does the DC current gain (hFE) of MJD44H11TF vary with operating conditions?
MJD44H11TF specifies hFE ≥ 60 at IC = 2 A and VCE = 1 V, dropping to ≥ 40 at IC = 4 A under same conditions. Gain decreases further at higher currents and elevated temperatures; Figure 4 in the datasheet shows hFE falling to ~35 at IC = 8 A and 25 °C, necessitating sufficient base drive margin in high-current saturation.
Can MJD44H11TF be used in parallel configurations?
Yes, MJD44H11TF supports parallel operation for higher current handling, but requires individual base resistors to ensure current sharing. Its positive temperature coefficient of VCE(sat) promotes self-balancing, and the DPAK package's low RθJC helps maintain uniform junction temperatures across devices when mounted on shared thermal planes.
MJD44H11TF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD44H11TF FAQ
1.How can I place an order for MJD44H11TF through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD44H11TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD44H11TF reliable?
The price and inventory of MJD44H11TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD44H11TF is usually 5 days.
3.What payment methods are accepted for MJD44H11TF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD44H11TF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD44H11TF?
MJD44H11TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD44H11TF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD44H11TF?
For technical support, including MJD44H11TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD44H11TF requirements.
6.How does Aetrix verify that MJD44H11TF is sourced from the original manufacturer or authorized distributors?
All MJD44H11TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD44H11TF meets industry standards.
7.What is the process for return or replacement of MJD44H11TF?
All MJD44H11TF units undergo pre-shipment inspection (PSI). If there is an issue with MJD44H11TF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD44H11TF part is unused and in its original packaging.
Return procedure for MJD44H11TF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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