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onsemi MJD45H11-001
- Part No.:
- MJD45H11-001
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
MJD45H11-001.pdf
- Description:
- TRANS PNP 80V 8A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,362
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Product details
Overview
MJD45H11-001 from onsemi is a PNP silicon power transistor in DPAK (Case 369C) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low VCE(sat) of 1 V at 8 A/0.4 A drive and fast switching with tf = 100 ns, designed for output/driver stages in switching regulators, DC-DC converters, and linear power amplifiers.
For engineers reviewing the MJD45H11-001 datasheet, pinout, applications, or equivalent options, key selection criteria include its complementary pairing with MJD44H11, AEC-Q101 qualification (NJV variants), thermal resistance RθJC = 6.25 °C/W, and suitability for high-current, medium-voltage switching where low saturation loss and robust SOA are required.
Technical Context
This PNP bipolar junction transistor operates in linear and saturated switching modes, with hFE ≥ 40 at IC = 4 A and VCE = 1 V. Its safe operating area (SOA) is defined up to 150 °C junction temperature, limited by both thermal constraints and second breakdown under pulsed conditions.
The device features electrically similar characteristics to legacy D45H series transistors but with Pb-free, RoHS-compliant packaging and UL 94 V-0 epoxy. It supports surface-mount assembly via lead-formed or straight-lead configurations (suffix "−1"), and exhibits Ccb = 130 pF and fT = 90 MHz at specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum blocking voltage between collector and emitter with base open; defines upper voltage limit in switching regulator high-side or amplifier output stage applications. |
| IC (continuous) | 8 A - Continuous DC collector current capability at TC = 25 °C; enables use in 5–10 W power stages without forced cooling. |
| VCE(sat) | 1 V max at IC = 8 A, IB = 0.4 A - Low saturation voltage minimizes conduction loss and heat generation in saturated-switching topologies. |
| fT | 90 MHz - Current-gain bandwidth product indicating usable frequency range for small-signal amplification or high-speed switching control loops. |
| RθJC | 6.25 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting to sustain full 20 W dissipation with ≤125 °C case rise above ambient. |
| tf | 100 ns - Fall time at IC = 5 A, enabling efficient operation up to ~1 MHz in hard-switched converters. |
| hFE | 40 min at IC = 4 A, VCE = 1 V - Sufficient DC gain for direct TTL/CMOS driver interface without additional pre-driver stages. |
Pinout & Package
DPAK-3 (Case 369C) surface-mount package: 6.10 × 6.54 × 2.28 mm body with 2.29 mm lead pitch; thermally enhanced plastic housing meeting UL 94 V-0 at 0.125 in thickness.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative current relative to emitter to turn on; compatible with standard BJT driver circuits. |
| 2 | Collector | Main high-current output terminal; electrically tied to pin 4; connected to load or supply rail in common-emitter configurations. |
| 3 | Emiter | Reference and current return path; typically tied to higher potential (e.g., VCC) in PNP switch applications; serves as bias reference for base drive. |
| 4 | Collector | Second collector connection for improved current handling and thermal spreading; must be connected to same node as pin 2 for rated performance. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary PNP pairing | Matched electrical specs with MJD44H11 (NPN), simplifying push-pull, H-bridge, and Class AB amplifier design without gain or timing mismatch. |
| Low VCE(sat) | 1 V max at 8 A enables <1.5 W conduction loss per device in saturated switching, reducing heatsink requirements in space-constrained power supplies. |
| AEC-Q101 qualified option | NJV-prefix variants meet automotive-grade reliability standards including stress testing, PPAP documentation, and controlled manufacturing site traceability. |
| Fast switching | 100 ns fall time and 135 ns rise time support >500 kHz switching frequencies in DC-DC converters while maintaining efficiency and EMI control. |
| Pb-free, RoHS-compliant | Meets global environmental regulations; UL 94 V-0 rated epoxy ensures flame resistance in safety-critical industrial and automotive end equipment. |
Applications
| Switching Regulator Output Stage | DC-DC Converter Driver |
|---|---|
|
Use Scenario: High-current, medium-voltage step-down converter in industrial PLC power modules. IC Role / Device Role / Timing Role: PNP switch in synchronous or quasi-resonant topology, operating in hard-switched mode at 200–500 kHz. Use Value: 80 V VCEO and 8 A IC rating allow direct integration into 48 V input systems; low VCE(sat) reduces thermal load on PCB-mounted heatsinks. |
Use Scenario: Dual-rail ±15 V isolated DC-DC converter for op-amp biasing in test instrumentation. IC Role / Device Role / Timing Role: Complementary PNP/NPN pair (MJD45H11 + MJD44H11) forming push-pull output stage driving transformer primary. Use Value: Matched fT (90/85 MHz) and switching times ensure symmetrical drive waveform, minimizing transformer core imbalance and audible noise. |
| Linear Power Amplifier | Motor Driver Half-Bridge |
|
Use Scenario: Audio-frequency power amplifier output stage delivering 5–10 W into 4 Ω or 8 Ω loads. IC Role / Device Role / Timing Role: PNP emitter-follower output device biased in Class AB, handling negative half-cycle current. Use Value: hFE ≥ 40 at 4 A ensures stable bias control; SOA curve supports continuous 5 W dissipation without secondary breakdown risk. |
Use Scenario: 24 V BLDC motor gate driver pre-stage in HVAC fan control module. IC Role / Device Role / Timing Role: High-side PNP switch controlling current flow to N-channel MOSFET gate resistor network. Use Value: Fast tf = 100 ns enables precise dead-time control; 80 V rating accommodates inductive kickback from motor windings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11G | Same die, identical electrical specs, DPAK-3 package with Pb-free marking; no "−001" suffix - indicates standard reel/rail shipping variant. | No functional difference; used interchangeably in production where part numbering follows onsemi's standard ordering codes. | Select MJD45H11G for standard procurement; MJD45H11-001 may reflect specific customer-assigned internal revision or tape-and-reel configuration. |
| BD241C | TO-220 package, lower fT (3 MHz), higher VCE(sat) (1.5 V), same VCEO/IC ratings; not surface-mountable. | Suitable only for through-hole designs requiring manual assembly or retrofit; lacks DPAK thermal performance and switching speed. | Choose BD241C only when board layout prohibits SMT or when legacy TO-220 heatsink infrastructure exists. |
Compared with MJD45H11-001, MJD45H11G offers identical performance in standard packaging, while BD241C trades SMT compatibility and speed for through-hole mechanical robustness and wider vendor availability - making MJD45H11-001 optimal for new high-density, high-frequency power designs.
Availability
MJD45H11-001 is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and linear power amplifiers requiring stable component supply across industrial, automotive, and instrumentation programs.
Supply support for MJD45H11-001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJD45H11-001 belongs to onsemi's complementary power transistor family targeting cost-sensitive, high-reliability power conversion and amplification - engineered for manufacturability, thermal robustness, and AEC-Q101 compliance in harsh environments.
FAQ
What is the maximum continuous collector current rating for MJD45H11-001?
The MJD45H11-001 is rated for 8 A continuous collector current (IC) at case temperature TC = 25 °C. Derating applies above this temperature at 0.16 W/°C, and the device's safe operating area must be observed under pulsed conditions to avoid second breakdown. This rating assumes proper PCB copper pour and heatsinking per onsemi's recommended pad layout.
Is MJD45H11-001 pin-compatible with MJD44H11?
No - MJD45H11-001 (PNP) and MJD44H11 (NPN) share identical DPAK-3 package pinout (pin 1 = Base, pins 2 & 4 = Collector, pin 3 = Emitter) but are complementary devices, not pin-compatible replacements. They are designed to be used together in push-pull or H-bridge configurations, not as drop-in substitutes for one another.
Does MJD45H11-001 meet automotive qualification standards?
The base MJD45H11-001 is not explicitly AEC-Q101 qualified; however, the NJVMJD45H11G variant - same die and package - is AEC-Q101 qualified and PPAP capable. For automotive applications, specify the NJV prefix version to ensure compliance with stress testing, lot traceability, and change control requirements.
What is the thermal resistance from junction to case (RθJC) for MJD45H11-001?
The MJD45H11-001 has a maximum junction-to-case thermal resistance (RθJC) of 6.25 °C/W. This value is measured under standardized conditions with the device surface-mounted on minimum recommended copper pads. It enables direct heatsink attachment to sustain full 20 W power dissipation with ≤125 °C temperature rise from case to junction.
Can MJD45H11-001 be used in linear amplifier applications?
Yes - the MJD45H11-001 is specifically designed for both switching and linear operation. Its SOA curve (Figure 2) supports continuous DC operation up to 5 W at TC = 25 °C, and its hFE stability across temperature and current makes it suitable for Class AB audio output stages and precision current sources where low distortion and thermal predictability are critical.
MJD45H11-001 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
MJD45H11-001 FAQ
1.How can I place an order for MJD45H11-001 through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD45H11-001 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD45H11-001 reliable?
The price and inventory of MJD45H11-001 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD45H11-001 is usually 5 days.
3.What payment methods are accepted for MJD45H11-001?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD45H11-001 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD45H11-001?
MJD45H11-001 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD45H11-001 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD45H11-001?
For technical support, including MJD45H11-001 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD45H11-001 requirements.
6.How does Aetrix verify that MJD45H11-001 is sourced from the original manufacturer or authorized distributors?
All MJD45H11-001 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD45H11-001 meets industry standards.
7.What is the process for return or replacement of MJD45H11-001?
All MJD45H11-001 units undergo pre-shipment inspection (PSI). If there is an issue with MJD45H11-001, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD45H11-001 part is unused and in its original packaging.
Return procedure for MJD45H11-001:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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