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onsemi MJD45H11-1G
- Part No.:
- MJD45H11-1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
MJD45H11-1G.pdf
- Description:
- TRANS PNP 80V 8A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:376
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Product details
Overview
MJD45H11-1G from onsemi is a PNP silicon power transistor in IPAK (Case 369D) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W total power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A / IB = 0.4 A and fast switching with tf = 100 ns, targeting driver and output stages in DC-DC converters and linear power amplifiers.
For engineers reviewing the MJD45H11-1G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, complementary pairing with MJD44H11-1G, thermal resistance RJC = 6.25 °C/W, AEC-Q101 qualification (NJV variants), and Pb-free DPAK/IPAK footprint compatibility.
Technical Context
This PNP bipolar junction transistor operates in linear and saturated switching modes, with hFE ≥40 at IC = 4 A and VCE = 1 V. Its safe operating area (SOA) is defined up to 150 °C junction temperature, bounded by second breakdown and thermal limits under pulsed conditions.
The device features low base-emitter saturation voltage (VBE(sat) ≤1.5 V at IC = 8 A / IB = 0.8 A), high fT = 90 MHz, and Ccb = 130 pF at VCB = 10 V - enabling use in medium-frequency switching regulators and audio output stages where gain-bandwidth and switching speed are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - Maximum blocking voltage between collector and emitter with base open; defines maximum supply rail compatibility in switching applications. |
| IC (continuous) | 8 Adc - Continuous collector current rating at TC = 25 °C; determines usable load current in driver or amplifier output stages. |
| VCE(sat) | ≤1 Vdc at IC = 8 A / IB = 0.4 A - Low saturation voltage minimizes conduction loss and heat generation in high-current switching. |
| fT | 90 MHz - Current-gain bandwidth product; supports stable operation up to ~10–20 MHz in small-signal amplification or high-speed switching. |
| RJC | 6.25 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for efficient thermal management in power circuits. |
| tf | 100 ns - Fall time at IC = 5 A / IB1 = IB2 = 0.5 A; contributes to reduced switching losses in PWM-based converters. |
| hFE | ≥40 at IC = 4 A / VCE = 1 V - DC current gain sufficient for moderate base drive efficiency in linear and saturated operation. |
Pinout & Package
IPAK (Case 369D) surface-mount package with 4-terminal configuration: thermally enhanced leadframe design optimized for PCB copper pour thermal relief and mechanical stability in high-power applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for biasing; requires current-limited drive to achieve specified IC/IB ratios and avoid thermal runaway. |
| 2 & 4 | Collector | Common high-current output node; electrically connected internally; must be routed to heatsink-compatible copper area for thermal dissipation. |
| 3 | Emitter | Power return path; typically tied to system ground or negative rail; carries full load current and influences VBE stability. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary PNP pairing | Matched with MJD44H11-1G (NPN) for push-pull and H-bridge designs - simplifies layout and ensures balanced gain/switching characteristics. |
| Low VCE(sat) | ≤1 V at 8 A enables <1.6 W conduction loss per device - critical for efficiency in battery-powered or thermally constrained converters. |
| AEC-Q101 qualified option | NJV-prefix variants meet automotive reliability standards - supports industrial and automotive-grade designs requiring PPAP documentation. |
| Pb-free, RoHS-compliant | Halogen-free/BFR-free epoxy meets UL 94 V-0 flammability rating at 0.125 in thickness - satisfies safety and environmental compliance requirements. |
| Fast switching performance | 100 ns fall time + 135 ns rise/delay time allows >1 MHz PWM operation - suitable for compact, high-efficiency SMPS topologies. |
Applications
| Switching Regulator Output Stage | Linear Audio Amplifier Driver |
|---|---|
Use Scenario: High-current, medium-voltage output stage in non-isolated buck or flyback DC-DC converters delivering up to 60 W. IC Role / Device Role / Timing Role: PNP power switch controlling energy transfer to output filter; operates in saturated switching mode with fixed-frequency PWM. Use Value: Low VCE(sat) reduces conduction loss; fast tf/tr minimizes transition loss; SOA supports peak currents up to 16 A. |
Use Scenario: Complementary emitter-follower driver in Class AB audio amplifier output stage driving 4–8 Ω loads. IC Role / Device Role / Timing Role: Linear-mode PNP current source providing high-current, low-distortion signal replication to speaker load. Use Value: hFE ≥40 ensures stable bias control; RJC = 6.25 °C/W enables direct heatsink coupling for thermal stability at sustained 5–7 W dissipation. |
| Motor Control Half-Bridge | Industrial Power Supply Protection |
Use Scenario: Low-side PNP switch in brushed DC motor half-bridge for bidirectional control in HVAC actuators or industrial valves. IC Role / Device Role / Timing Role: Saturated switch sinking current during active braking or reverse drive; paired with NPN high-side counterpart. Use Value: 80 V VCEO accommodates back-EMF spikes; 16 A ICM handles motor stall currents; complementary pinout simplifies gate-drive routing. |
Use Scenario: Overcurrent crowbar or foldback protection element in programmable lab power supplies or battery chargers. IC Role / Device Role / Timing Role: Fast-acting current-limiting transistor triggered by sense amplifier during fault conditions. Use Value: 100 ns tf ensures sub-microsecond shutdown response; 150 °C TJ(max) supports short-duration fault tolerance without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11G | DPAK (Case 369C) package; identical electrical specs but higher RJA = 71.4 °C/W vs. RJA ≈ 85 °C/W for IPAK variant; same pinout (Style 1). | Suitable for lower-power or space-constrained layouts where thermal mass is limited; less effective for >5 W continuous dissipation without large copper pour. | Select MJD45H11G when board real estate is prioritized over thermal performance; verify PCB pad design matches DPAK footprint. |
| BD241C | TO-220 package; VCEO = 100 V, IC = 10 A, but slower tf = 250 ns and no AEC-Q101 option; hFE min = 20 at IC = 4 A. | Used in legacy linear power supplies and industrial controls where through-hole assembly and higher voltage margin are required. | Choose BD241C only if TO-220 mounting and 100 V rating are mandatory; expect higher switching losses and no automotive qualification. |
Compared with MJD45H11-1G, MJD45H11G offers identical performance in a smaller DPAK footprint but sacrifices thermal robustness, while BD241C provides higher voltage headroom and through-hole reliability at the cost of speed and modern compliance - making MJD45H11-1G optimal for surface-mount, thermally demanding, and automotive-qualified medium-power switching.
Availability
MJD45H11-1G is available at Aetrix Electronics and suitable for switching regulators, motor control drivers, and linear audio amplifier output stages requiring stable component supply, AEC-Q101 traceability, and Pb-free compliance.
Supply support for MJD45H11-1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJD45H11-1G belongs to onsemi's complementary power transistor family designed for robust, high-current switching and amplification in surface-mount power systems - emphasizing thermal performance, reliability, and automotive-grade qualification.
FAQ
What is the maximum junction temperature rating for the MJD45H11-1G?
The MJD45H11-1G has an operating junction temperature range of −55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This 150 °C upper limit defines the thermal boundary for safe continuous operation and is used to calculate allowable power dissipation via RJC = 6.25 °C/W. Exceeding this temperature risks permanent degradation of the silicon die and bond wires. The MJD45H11-1G datasheet confirms this rating applies under both steady-state and transient pulse conditions when mounted per recommended PCB pad guidelines.
Does the MJD45H11-1G have automotive qualification?
The standard MJD45H11-1G is not automotive-qualified, but onsemi offers the NJVMJD45H11-1G variant with AEC-Q101 qualification and PPAP capability. This version includes unique site and control change requirements for automotive production traceability. The MJD45H11-1G shares identical electrical and thermal specifications with the NJV variant - only the manufacturing control and documentation differ. For automotive applications, engineers must specify the NJV prefix to ensure compliance with IATF 16949 and vehicle OEM requirements.
What is the pin configuration and package type of the MJD45H11-1G?
The MJD45H11-1G uses the IPAK (Case 369D) surface-mount package with four terminals in Style 1 configuration: Pin 1 = Base, Pins 2 & 4 = Collector (internally connected), Pin 3 = Emitter. This layout enables dual-collector thermal paths for improved heat spreading into PCB copper. The IPAK footprint differs from DPAK (Case 369C) in body dimensions and leadform - specifically, IPAK has longer leads and a taller profile optimized for insertion-mount thermal relief, though both share the same 2.29 mm pitch and 4-pin arrangement.
How does the MJD45H11-1G compare to the MJD44H11-1G in complementary designs?
The MJD45H11-1G (PNP) and MJD44H11-1G (NPN) form a matched complementary pair with identical voltage, current, and thermal ratings - including VCEO = 80 V, IC = 8 A, RJC = 6.25 °C/W, and IPAK packaging. Their electrical characteristics are symmetric: MJD45H11-1G has VCE(sat) ≤1 V and fT = 90 MHz, while MJD44H11-1G specifies VCE(sat) ≤1 V and fT = 85 MHz. This matching simplifies push-pull, H-bridge, and Class AB amplifier designs by ensuring balanced gain, switching speed, and thermal behavior between polarities.
What are the recommended PCB layout practices for thermal management of the MJD45H11-1G?
For optimal thermal performance, the MJD45H11-1G requires minimum copper pad sizes per onsemi's datasheet recommendations: ≥100 mm² exposed copper connected to Pins 2 and 4 (Collector) with ≥3 thermal vias (0.3 mm diameter, filled or plated) to inner-layer ground/power planes. The emitter (Pin 3) and base (Pin 1) pads should be isolated to prevent unintended current paths. Use solder mask-defined pads to maximize thermal conduction, and avoid routing high-impedance traces near the collector terminals to minimize parasitic inductance during fast switching events involving the MJD45H11-1G.
MJD45H11-1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
MJD45H11-1G FAQ
1.How can I place an order for MJD45H11-1G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD45H11-1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD45H11-1G reliable?
The price and inventory of MJD45H11-1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD45H11-1G is usually 5 days.
3.What payment methods are accepted for MJD45H11-1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD45H11-1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD45H11-1G?
MJD45H11-1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD45H11-1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD45H11-1G?
For technical support, including MJD45H11-1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD45H11-1G requirements.
6.How does Aetrix verify that MJD45H11-1G is sourced from the original manufacturer or authorized distributors?
All MJD45H11-1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD45H11-1G meets industry standards.
7.What is the process for return or replacement of MJD45H11-1G?
All MJD45H11-1G units undergo pre-shipment inspection (PSI). If there is an issue with MJD45H11-1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD45H11-1G part is unused and in its original packaging.
Return procedure for MJD45H11-1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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