Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. MJD45H11J

Part No.:
MJD45H11J
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixMJD45H11J.pdf
Description:
TRANS PNP 80V 8A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,366

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MJD45H11J from Nexperia is a PNP high-power bipolar transistor in DPAK (SOT428C) package, rated for −80 V VCEO, −8 A continuous collector current, and 20 W junction-to-mounting-base power dissipation. It serves as a robust load switch or linear-mode voltage regulator in industrial power management systems requiring high thermal efficiency and low saturation voltage.

For engineers reviewing the MJD45H11J datasheet, MJD45H11J pinout, MJD45H11J application, or MJD45H11J equivalent, key selection criteria include verified DC current gain (hFE ≥ 60 at −2 A), −1 V VCE(sat) at −8 A/−400 mA drive, thermal resistance Rth(j-mb) = 6.25 K/W, and compatibility with FR4 PCB mounting using 1 cm² tin-plated collector pad.

Technical Context

This PNP BJT operates in active, saturation, and cutoff regions with defined safe operating area (SOA) up to Tj = 150 °C. Its switching performance is characterized by ton = 225 ns, ts = 280 ns, and tf = 100 ns under specified test conditions (VCC = −12.5 V, IBon/IBoff = ±0.5 A).

The device features electrically similar behavior to the MJD45H series and pairs with NPN complement MJD44H11. Its base-emitter cut-off current (IEBO) is ≤ −1 µA at −5 V, and collector-emitter leakage (ICES) remains ≤ −50 µA at 150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −80 V: Maximum reverse-biased collector-emitter voltage before breakdown; defines safe blocking capability in high-side switch configurations.
IC −8 A: Continuous DC collector current rating at Tmb ≤ 25 °C; determines steady-state load-handling capacity.
VCE(sat) −1 V @ −8 A/−400 mA: Low saturation voltage minimizes conduction loss and heat generation in linear or switching applications.
hFE 60 @ −2 A/−1 V: DC current gain ensures reliable base drive sizing for predictable switching and amplification behavior.
Rth(j-mb) 6.25 K/W: Thermal resistance from junction to mounting base enables direct heatsink attachment for 20 W power dissipation.
fT 80 MHz @ −500 mA/−10 V: Transition frequency supports medium-speed switching in motor drive and relay replacement circuits.
toff 380 ns: Total turn-off time governs maximum usable switching frequency in PWM-controlled loads.

Pinout & Package

Package: DPAK (SOT428C), surface-mounted plastic package with 3 leads (lead 1 cropped), mounting base electrically connected to collector. Dimensions per IEC/JEDEC SC-63/TO-252 standard; requires 1 cm² tin-plated copper pad on FR4 PCB for thermal performance.

Pin/Terminal Circuit Role Design Meaning
1 (B) Base Control terminal for forward-biased PNP operation; requires negative current relative to emitter to enable conduction.
2 (C) Collector Main current-carrying terminal; internally bonded to mounting base for enhanced thermal path and mechanical stability.
3 (E) Emitter Reference terminal for biasing; typically connected to higher potential in high-side switch topologies.
Mounting Base (mb) Collector Connection Electrically tied to pin 2; must be soldered to large copper area for thermal management and electrical grounding in high-current paths.

Key Features

Feature Design Value
High thermal power dissipation 20 W junction-to-mounting-base rating enables direct heatsink coupling without isolation hardware.
Low VCE(sat) −1 V at −8 A reduces conduction losses by >30% versus legacy PNP transistors in constant-current backlight drivers.
Fast switching speed 380 ns total turn-off time supports PWM frequencies up to 250 kHz in motor control loops.
Electrically similar to MJD45H series Drop-in compatibility with existing designs using MJD45H11 variants simplifies qualification and layout reuse.
Robust SOA at elevated temperature Rated for full −8 A current at Tj = 150 °C, enabling operation in uncooled industrial enclosures.

Applications

Power Management Load Switch

Use Scenario: High-side power rail control in 24 V industrial PLC modules with overcurrent protection.

IC Role / Device Role / Timing Role: PNP BJT configured as emitter-follower high-side switch with base resistor network for current-limited turn-on.

Use Value: −80 V VCEO withstands inductive kickback; −1 V VCE(sat) limits power loss to <1.5 W at 8 A, reducing heatsink size by 40%.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC zone actuators.

IC Role / Device Role / Timing Role: Main power switch driving 12 V DC solenoid loads with flyback diode protection.

Use Value: 380 ns toff enables precise 100 ms pulse-width control; 20 W thermal rating sustains 5 A continuous duty without derating.

Linear Voltage Regulator Constant-Current Backlight Drive

Use Scenario: Adjustable 5–15 V linear regulator for analog sensor signal conditioning circuits.

IC Role / Device Role / Timing Role: Pass transistor in series-regulator topology with op-amp error amplifier and Zener reference.

Use Value: hFE ≥ 60 ensures stable loop gain across −2 A load range; Rth(j-mb) = 6.25 K/W allows regulation at 75 °C ambient without fan cooling.

Use Scenario: LED backlight current source in medical display panels requiring <1% current drift.

IC Role / Device Role / Timing Role: Constant-current sink with precision sense resistor and feedback op-amp controlling base voltage.

Use Value: −50 µA ICES at 150 °C prevents thermal runaway; −1.5 V VBE(sat) at −800 mA enables accurate current mirror matching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD45H11 Same die, identical specifications; differs only in marking code (no 'J' suffix) and packaging variant (tape-and-reel vs. bulk). No functional difference; suitable for identical use cases including motor drive and relay replacement. Select when standard marking and non-J-coded reels are acceptable for production line traceability.
BDX54C Lower VCEO (−100 V), lower IC (−8 A), higher VCE(sat) (−1.5 V), TO-126 package with no integrated mounting base. Requires external heatsink and insulator; unsuitable for space-constrained SMD layouts or high-efficiency thermal designs. Choose only if legacy TO-126 footprint compatibility is mandatory and thermal performance margin is available.

Compared with MJD45H11J, the base-marked MJD45H11 offers identical electrical behavior but lacks J-suffix traceability, while BDX54C trades SMD thermal efficiency for through-hole legacy support-making MJD45H11J optimal for new designs prioritizing power density and thermal reliability.

Availability

MJD45H11J is available at Aetrix Electronics and suitable for industrial power management, motor drive, and linear voltage regulator applications requiring stable component supply, consistent thermal performance, and SMD manufacturability.

Supply support for MJD45H11J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions with focus on efficiency, reliability, and miniaturization for industrial and automotive markets.

MJD45H11J belongs to Nexperia's high-power bipolar transistor product line, engineered for robust linear and switching operation in demanding power conversion, load control, and thermal-critical applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The MJD45H11J has a maximum junction temperature (Tj) of 150 °C, validated across its full −8 A current range and −80 V blocking capability. Operation at this limit requires proper thermal design-specifically, a 1 cm² tin-plated copper pad on FR4 PCB-to maintain Rth(j-mb) ≤ 6.25 K/W and avoid permanent degradation.

Can MJD45H11J replace MJD45H11 in existing designs?

Yes-MJD45H11J is functionally and electrically identical to MJD45H11, differing only in marking code ('J' suffix) and tape-and-reel packaging configuration. Pinout, thermal characteristics, SOA, and all electrical parameters match exactly, enabling drop-in replacement without layout or thermal redesign.

What is the recommended PCB footprint for optimal thermal performance?

The official Nexperia footprint specifies a 6.15 mm × 5.8 mm occupied area with 1.8 mm solder paste stencil opening and 4.57 mm × 6.0 mm solder lands. Critical for thermal performance is the 1 cm² tin-plated copper pad connected directly to the mounting base (pin 2), which enables the full 20 W junction-to-mounting-base power dissipation.

How does the mounting base connection affect circuit layout?

The mounting base is electrically tied to the collector (pin 2), so PCB layout must treat it as a high-current, high-voltage node-not a ground plane. Isolation from adjacent traces and components is required, and the pad must connect only to the collector net. Failure to isolate risks short-circuiting or thermal crosstalk in multi-transistor power stages.

MJD45H11J Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
8 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Current - Collector Cutoff (Max):
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 2A, 1V
Power - Max:
1.75 W
Frequency - Transition:
80MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

MJD45H11J FAQ

1.How can I place an order for MJD45H11J through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD45H11J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD45H11J reliable?

The price and inventory of MJD45H11J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD45H11J is usually 5 days.

3.What payment methods are accepted for MJD45H11J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD45H11J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD45H11J?

MJD45H11J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD45H11J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD45H11J?

For technical support, including MJD45H11J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD45H11J requirements.

6.How does Aetrix verify that MJD45H11J is sourced from the original manufacturer or authorized distributors?

All MJD45H11J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD45H11J meets industry standards.

7.What is the process for return or replacement of MJD45H11J?

All MJD45H11J units undergo pre-shipment inspection (PSI). If there is an issue with MJD45H11J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD45H11J part is unused and in its original packaging.

Return procedure for MJD45H11J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJD45H11J Tags

  • MJD45H11J
  • MJD45H11J PDF
  • MJD45H11J Datasheet
  • MJD45H11J Specifications
  • MJD45H11J Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. MJD45H11J
  • Buy MJD45H11J
  • MJD45H11J Price
  • MJD45H11J Distributor
  • MJD45H11J Supplier
  • MJD45H11J Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER