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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJD45H11TM

Name: MJD45H11TM
Brand: onsemi
SKU: MJD45H11TM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJD45H11TM

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: MJD45H11TM.pdf

Description:: TRANS PNP 80V 8A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJD45H11TM from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-252 (DPAK) package, rated for -80 V V_CEO, -8 A continuous collector current, and 20 W power dissipation at T_C = 25°C. It delivers low -1 V V_CE(sat) at -8 A/-0.4 A drive and supports fast switching with 135 ns t_ON, suited for high-current DC motor control and industrial power switching stages.

For engineers reviewing the MJD45H11TM datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, DPAK thermal performance, saturation voltage under full-rated load, safe operating area (SOA) compliance at elevated case temperatures, and compatibility with surface-mount driver-stage layouts requiring lead-formed SMT mounting.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching in high-side configurations. Its epitaxial base structure enables stable h_FE of 40–60 across -2 A to -4 A DC collector currents, with f_T = 40 MHz ensuring usable bandwidth for PWM frequencies up to several hundred kHz.

The MJD45H11TM features a monolithic die mounted in a thermally enhanced DPAK package with exposed drain pad (pin 2), enabling direct heatsinking. Its SOA curve is defined up to 100 μs pulse width and derates linearly above 25°C case temperature, supporting robust operation in repetitive inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-80 V - Maximum blocking voltage between collector and emitter with base open; defines upper limit for high-side switch bus voltage rating.
I_C (DC)	-8 A - Continuous collector current capability at T_C = 25°C; determines maximum steady-state load current without forced cooling.
V_CE(sat)	-1 V @ I_C = -8 A, I_B = -0.4 A - Low saturation voltage minimizes conduction loss and heat generation in on-state switching applications.
f_T	40 MHz - Current gain bandwidth product; supports reliable switching at PWM frequencies ≤ 200 kHz with adequate gain margin.
t_ON/t_F	135 ns / 100 ns - Fast turn-on and fall times reduce switching losses and enable efficient operation in high-frequency power converters.
P_C (T_C = 25°C)	20 W - Maximum power dissipation with case held at 25°C; requires heatsink design targeting ≤ 1.25°C/W thermal resistance for full-load operation.

Pinout & Package

Package: TO-252-3L (DPAK), surface-mount, lead-formed, with exposed thermal pad connected to collector (pin 2). Dimensions comply with JEDEC MO-238 variant AB mechanical outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives negative base current to saturate the transistor; requires driver capable of sinking ≥0.8 A peak for full-rated switching.
2 (Collector)	High-current output node	Connected to exposed metal pad for thermal conduction; must be routed to heatsink or copper pour ≥100 mm² for rated power handling.
3 (Emitter)	Power return reference	Typically tied to system ground or positive rail in high-side configuration; carries full load current and defines common reference for base drive.

Key Features

Feature	Design Value
Low V_CE(sat)	-1 V at -8 A ensures <1.6 W conduction loss per device, reducing thermal stress in parallel or multi-phase designs.
DPAK thermal performance	20 W power dissipation at T_C = 25°C enables compact board-level heatsinking without discrete mounting hardware.
Fast switching	135 ns t_ON and 100 ns t_F support >100 kHz PWM operation while maintaining <5% switching loss contribution at full load.
Robust SOA	Defined safe operating area up to 5 ms pulse width allows reliable handling of inductive kickback in relay and solenoid drivers.

Applications

DC Motor Control	Industrial Power Switching
Use Scenario: Bidirectional H-bridge driver stage for 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase voltage; paired with NPN low-side counterpart for complementary drive. Use Value: -1 V V_CE(sat) limits conduction loss to ≤8 W at 8 A, enabling air-cooled PCB layout without external heatsinks.	Use Scenario: Overcurrent-protected power distribution module for programmable logic controller (PLC) output cards. IC Role / Device Role / Timing Role: Final-stage switching element delivering up to 8 A to field loads such as valves and indicators. Use Value: Verified SOA up to 100 μs supports safe interruption of inductive loads without snubber networks.
Linear Regulator Pass Element	High-Voltage LED Driver
Use Scenario: Adjustable positive-voltage linear regulator supplying 5–15 V at up to 5 A for analog sensor subsystems. IC Role / Device Role / Timing Role: Series pass transistor operating in active region; base driven by error amplifier feedback loop. Use Value: h_FE ≥40 at -4 A ensures stable closed-loop regulation with minimal base drive overhead.	Use Scenario: Constant-current driver for high-brightness LED strings in industrial signage with 60 V bus voltage. IC Role / Device Role / Timing Role: High-side current sink regulating LED current via emitter-follower configuration. Use Value: -80 V V_CEO provides 20 V headroom above 60 V supply, accommodating line transients and ripple.

DC Motor Control

Industrial Power Switching

Use Scenario: Bidirectional H-bridge driver stage for 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase voltage; paired with NPN low-side counterpart for complementary drive.

Use Value: -1 V V_CE(sat) limits conduction loss to ≤8 W at 8 A, enabling air-cooled PCB layout without external heatsinks.

Use Scenario: Overcurrent-protected power distribution module for programmable logic controller (PLC) output cards.

IC Role / Device Role / Timing Role: Final-stage switching element delivering up to 8 A to field loads such as valves and indicators.

Use Value: Verified SOA up to 100 μs supports safe interruption of inductive loads without snubber networks.

Linear Regulator Pass Element

High-Voltage LED Driver

Use Scenario: Adjustable positive-voltage linear regulator supplying 5–15 V at up to 5 A for analog sensor subsystems.

IC Role / Device Role / Timing Role: Series pass transistor operating in active region; base driven by error amplifier feedback loop.

Use Value: h_FE ≥40 at -4 A ensures stable closed-loop regulation with minimal base drive overhead.

Use Scenario: Constant-current driver for high-brightness LED strings in industrial signage with 60 V bus voltage.

IC Role / Device Role / Timing Role: High-side current sink regulating LED current via emitter-follower configuration.

Use Value: -80 V V_CEO provides 20 V headroom above 60 V supply, accommodating line transients and ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD44H11TM	V_CEO = -60 V (vs. -80 V); otherwise identical pinout, package, and saturation characteristics.	Not suitable for 72 V or higher bus systems; acceptable in 24–48 V industrial controls where lower voltage margin is acceptable.	Select when system max voltage ≤60 V and cost optimization is prioritized over voltage headroom.
BD249C	TO-126 package (not surface-mount); V_CEO = -80 V, I_C = -10 A, but slower t_ON = 300 ns and no DPAK thermal pad.	Requires through-hole assembly and external heatsink; unsuitable for automated SMT production or space-constrained boards.	Choose only for legacy through-hole designs where rework to DPAK is impractical and thermal budget permits larger heatsink.

Compared with MJD44H11TM and BD249C, the MJD45H11TM uniquely combines -80 V rating, SMT-compatible DPAK packaging, and sub-150 ns switching in a single device-enabling compact, high-reliability high-side switching without layout or assembly compromises.

Availability

MJD45H11TM is available at Aetrix Electronics and suitable for industrial motor control, PLC output modules, and high-voltage LED driver designs requiring stable component supply, long-term manufacturability, and traceable sourcing from authorized channels.

Supply support for MJD45H11TM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The MJD45H11TM belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, designed specifically for robust, high-current switching in industrial automation, power supplies, and motor drive applications where reliability under thermal and electrical stress is critical.

FAQ

What is the maximum continuous collector current rating for the MJD45H11TM?

The MJD45H11TM is rated for -8 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating is required above this temperature per the published power derating curve; at T_C = 100°C, the usable I_C drops to approximately -4.5 A. This rating assumes proper PCB copper area or heatsink attachment to the exposed collector pad (pin 2) to maintain thermal resistance.

Does the MJD45H11TM have a built-in protection diode or ESD structure?

No, the MJD45H11TM is a discrete PNP bipolar transistor without integrated protection diodes or ESD structures. External flyback diodes must be used across inductive loads, and board-level ESD protection (e.g., TVS on base line) is recommended for handling-sensitive environments. The device relies on its inherent rugged SOA and junction temperature limit of 150°C for fault tolerance.

Can the MJD45H11TM be used in parallel for higher current capacity?

Yes, the MJD45H11TM can be paralleled, but requires careful attention to emitter ballasting resistors (typically 0.1 Ω) and matched base drive to ensure current sharing. Its h_FE variation across lots and thermal coupling effects mean that unballasted parallel operation may result in current imbalance exceeding 20%. For >15 A total load, consider dedicated high-current alternatives or MOSFET-based solutions.

What is the typical DC current gain (h_FE) of the MJD45H11TM at operating conditions?

The MJD45H11TM exhibits h_FE = 60 (min) at V_CE = -1 V and I_C = -2 A, and h_FE = 40 (min) at V_CE = -1 V and I_C = -4 A. These values are guaranteed minimums per datasheet; typical units measure 70–90 at -2 A and 50–65 at -4 A. Designers should size base drive using the minimum h_FE to ensure saturation across process and temperature extremes.

Is the MJD45H11TM RoHS compliant and halogen-free?

Yes, the MJD45H11TM is RoHS compliant and halogen-free per ON Semiconductor's material declarations. It meets EU Directive 2011/65/EU and IEC 61249-2-21:2011 requirements. The TO-252 package uses matte tin lead finish and green molding compound. Full compliance documentation, including substance declarations and test reports, is available upon request from Aetrix Electronics or directly from ON Semiconductor's quality portal.

MJD45H11TM Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 1.75 W

Frequency - Transition:: 40MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

MJD45H11TM FAQ

1.How can I place an order for MJD45H11TM through Aetrix?

Please submit a Request for Quotation (RFQ) for MJD45H11TM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJD45H11TM reliable?

The price and inventory of MJD45H11TM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD45H11TM is usually 5 days.

3.What payment methods are accepted for MJD45H11TM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD45H11TM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJD45H11TM?

MJD45H11TM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJD45H11TM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJD45H11TM?

For technical support, including MJD45H11TM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD45H11TM requirements.

6.How does Aetrix verify that MJD45H11TM is sourced from the original manufacturer or authorized distributors?

All MJD45H11TM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD45H11TM meets industry standards.

7.What is the process for return or replacement of MJD45H11TM?

All MJD45H11TM units undergo pre-shipment inspection (PSI). If there is an issue with MJD45H11TM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJD45H11TM part is unused and in its original packaging.

Return procedure for MJD45H11TM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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